Temperature dependence of the thermal boundary conductance in Ag–3Si/diamond composites

Edtmaier, Christian; Bauer, E.; Weber, Ludger; Tako, Zeze Serge; Segl, Jakob; Friedbacher, Gernot

doi:10.1016/j.diamond.2015.01.010

Cited by 15 publications

(7 citation statements)

References 26 publications

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“…This effect has been described on "clean model" systems of plane and large diamond substrates with sputtered metal layers in TDTR experiments [19]. The role of such terminated diamonds on the thermal conductivity behaviour in "real" diamond-MMCs that were fabricated in a gas pressure infiltration equipment was first described in [20]. Note, that this method is not yet described for others than Al films and others than diamond surfaces, but may play also an important role for further reinforcement materials.…”

Section: Approach For Reactive Systemsmentioning

confidence: 99%

How to Master Interfaces in MMCs with Reactive Constituents

Edtmaier

2021

MSF

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It is evident that the interface in MMCs plays a crucial role with respect to thermophysical and mechanical properties of the composites. Inert systems like copper/carbon or silver/carbon will have low performance due to a very weak bonding between the constituents, whereas in reactive systems like Al/carbon, Fe(Ni)/WC and WC-Co/diamond the interfacial reaction has to be clearly controlled to avoid uncontrolled reactions. Such reactions may lead to partial or even complete dissolution of the phases and thus can have very detrimental impact on properties. In this contribution, we will summarize and present different approaches and recent results to overcome any interfacial problems. This can be either technological parameters like time, temperature, rate of consolidation, contact time in infiltration or inherent parameters like nominal composition, coatings, and surface terminations. It is of general interest to adjust optimal interfacial conditions for each application to achieve ideal properties in the composites.

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Section: Approach For Reactive Systemsmentioning

confidence: 99%

How to Master Interfaces in MMCs with Reactive Constituents

Edtmaier

2021

MSF

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“…Electrical resistivity for Ag-Si, Al and Al-Si matrix alloys were determined in a 4 point a.c. technique and using 1 × 1 × 10 mm 3 sample sizes. Details about both experimental setups are described in detail in [7]. Temperature dependent electrical resistivity data can help to better understand the respective thermal conductivity since both quantities are interrelated via the Wiedemann-Franz law, stating that the same charge carriers responsible for the electrical transport are also responsible for the heat transport from the warm to the cold end of the sample.…”

Section: Th Symposium On Compositesmentioning

confidence: 99%

“…On an application level, this has been achieved by either introducing carbide forming elements to form stronger chemical bonds at the interface [3][4][5], by increasing the effective contact surface between metal and inclusion to decrease the local heat flux density [6]. One less exploited aspect concerns the role of surface termination of diamond surfaces by oxygenation or hydrogenation on the Kapitza resistance and, subsequently, on the thermophysical properties of diamond MMCs [1,7]. From a scientific perspective, it is essential to understand how this interface has to be designed in order to minimize the Kapitza resistance and to improve the thermal boundary conductance TBC.…”

Section: Introductionmentioning

confidence: 99%

Thermal Conductivity Behaviour of Al/Diamond and Ag/Diamond Composites in the Temperature Range 4 K < T < 293 K

Edtmaier

Bauer

Tako

et al. 2015

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Two different systems, the non-reactive Ag–diamond and the reactive Al–diamond system, were assessed by their thermal conductivity behaviour, both were fabricated by gas pressure assisted infiltration of densely packed diamond bulks with aluminium or silver and different Si-concentration and diamonds of varying particle sizes. The effect of Si-concentration on the interface thermal conductance h between Al, Ag and diamonds was investigated in dependence of temperature by measuring thermal conductivity of composites with different sized diamond particles in the temperature range from 4 K up to ambient. Composite thermal conductivities κc(T) can be as high as 860 W m-1 K-1 at roughly 100 K for Al/diamond and 1100 W m-1 K-1 for Ag–Si/diamond at approx. 150 K. Although the Si concentration in the matrix plays an eminent role for κc(T), i.e. the lower the Si concentration, the higher κc(T), interface thermal conductance is almost unaffected in the reactive Al-diamond system. Furthermore, they are close to values determined on clean model systems, i.e. sputtered and evaporated metal layers on diamond monocrystals. For Ag–diamond composites, the matrix composition of Ag–1Si seems to reflect an optimal composition, as the highest thermal conductivity κc(T) and an extraordinary higher interface conductance was achieved compared to Ag–3Si/diamond composites.

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“…One less exploited aspect concerns the role of surface termination of diamond surfaces by oxygenation or hydrogenation on the Kapitza resistance and subsequently on the thermophysical properties of diamond MMCs [10][11][12][13][14]. From a scientific perspective, it is essential to understand how this interface has to be designed in order to minimize the Kapitza resistance and to improve ITC.…”

Section: Introductionmentioning

confidence: 99%

“…The ITC is then calculated by means of TDTR time-domain thermoreflectance experimental setup [10,11,15]. In [14] the positive influence of oxygenation on ITC was for the first time shown to be true in the low (4 K) to ambient temperature range for a Ag3Si/diamond system, fabricated under typical ''messier'' lab-scale conditions of gas pressure infiltration using synthetic diamond particles. Note, that different terminations of diamond surfaces can be created by acid and plasma treatments, respectively, and can result in the formation of different proportions of COOH, C-O, C=O, C sp 2 and C sp 3 bonding types depending on the applied chemicals and processes [10,16,17].…”

Section: Introductionmentioning

confidence: 99%

Microstructural characterization and quantitative analysis of the interfacial carbides in Al(Si)/diamond composites

et al. 2018

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The existence of interfacial carbides is a well-known phenomenon in Al/diamond composites, although quantitative analyses are not described so far. The control of the formation of interfacial carbides while processing Al(Si)/diamond composites is of vital interest as a degradation of thermophysical properties appears upon excessive formation. Analytical quantification was performed by GC-MS measurements of gaseous species released upon dissolving the matrix and interfacial reaction products in aqueous NaOH solutions and the CH 4 /N 2 ratio of the evolving reaction gases can be used for quantification. Although the formation of interfacial carbides is significantly suppressed by adding Si to Al, also a decline in composite thermal conductivity is observed in particular with increasing contact time between the liquid metal and the diamond particles during gas pressure infiltration. Furthermore, surface termination of diamond particles positively affects composite thermal conductivity as oxygenated diamond surfaces will result in an increase in composite thermal conductivity compared to hydrogenated ones. In order to understand the mechanisms responsible for all impacts on the thermal conductivity and thermal conductance behaviour, the metal/diamond interface was electrochemical etched and characterized by SEM. Selected specimens were also cut by an ultrashort pulsed laser system to characterize interfacial layers at the virgin cross section in the reactive system Al/diamond.

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Temperature dependence of the thermal boundary conductance in Ag–3Si/diamond composites

Cited by 15 publications

References 26 publications

How to Master Interfaces in MMCs with Reactive Constituents

How to Master Interfaces in MMCs with Reactive Constituents

Thermal Conductivity Behaviour of Al/Diamond and Ag/Diamond Composites in the Temperature Range 4 K < T < 293 K

Microstructural characterization and quantitative analysis of the interfacial carbides in Al(Si)/diamond composites

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Temperature dependence of the thermal boundary conductance in Ag–3Si/diamond composites

Cited by 15 publications

References 26 publications

How to Master Interfaces in MMCs with Reactive Constituents

How to Master Interfaces in MMCs with Reactive Constituents

Thermal Conductivity Behaviour of Al/Diamond and Ag/Diamond Composites in the Temperature Range 4 K &lt; T &lt; 293 K

Microstructural characterization and quantitative analysis of the interfacial carbides in Al(Si)/diamond composites

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Thermal Conductivity Behaviour of Al/Diamond and Ag/Diamond Composites in the Temperature Range 4 K < T < 293 K