Temperature Dependences of $I$– $V$ Characteristics of SD and LDD Poly-Si TFTs

Kimura, Mutsumi; Taya, Jun; Nakashima, Akihiro

doi:10.1109/led.2012.2188267

Cited by 11 publications

(8 citation statements)

References 14 publications

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“…It is clearly seen that the I OFF of studied poly-Si TFTs is significantly reduced by including LDD structures that effectively reduce the E-field strength near the drain junction. 11,12,20,21) As expected, the I ON of Conv.-LDD TFTs is lower than that of the Conv. TFTs due to the high-resistive LDDs.…”

Section: Resultssupporting

confidence: 76%

“…Conventionally, the source/drain (S/D) of poly-Si TFTs can be formed using self-aligned ion implantation after the gate formation with no additional lithographic processes in a simple approach. However, the conventional poly-Si TFTs may suffer degraded channel mobility [9][10][11][12] and high off-state leakage current (I OFF ) [13][14][15][16][17] due to the existence of grain boundaries in the channel and high electric-field (E-field) near the drain junction, respectively. Besides, the high E-field near the drain junction would also give rise to hot carrier degradation.…”

Section: Introductionmentioning

confidence: 99%

“…Besides, the high E-field near the drain junction would also give rise to hot carrier degradation. [17][18][19] Lightly-doped drain (LDD) structures 11,12,20,21) can be implemented to address the high peak E-field issues encountered by conventional poly-Si TFTs. However, additional lithographic and sidewall-spacer steps are needed for forming the LDD structures, complicating the device fabrication.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Fabrication and characterization of T-gate polysilicon thin-film transistors with lightly-doped drain

Lee

Chen

Huang

et al. 2022

Jpn. J. Appl. Phys.

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We report detailed fabrication and characterization of poly-Si thin-film transistors (TFTs) with T-shaped gate (T-gate) and lightly-doped drain (LDD) structures. The formation of the LDD underneath the wings of a T-gate primarily relies on the shadowing of implanted dopants during the implantation of source and drain. Therefore, the fabrication of LDD structures in our proposed T-gate poly-Si TFTs can save a number of process steps as compared to conventional poly-Si TFTs with LDD structures. Our fabricated T-gated poly-Si TFTs with LDD structures not only exhibit suppressed off-state leakage current but also show a significant improvement in on-state current as compared to that of conventional poly-Si TFTs with the same top-gate dimension.

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Section: Resultssupporting

confidence: 76%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Fabrication and characterization of T-gate polysilicon thin-film transistors with lightly-doped drain

Lee

Chen

Huang

et al. 2022

Jpn. J. Appl. Phys.

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“…where µ, T NOM , UTE, C ox , W, L, V SG , and V th are the mobility, nominal temperature at which the mobility is extracted, mobility temperature exponent, gate capacitance per unit area, channel width and length of the MOSFET, sourceto-gate voltage of the MOSFET, and threshold voltage, respectively. Since UTE has a value between −1 and −1.5 in most CMOS process technologies, the mobility decreases as the temperature increases, and thereby I D decreases as well [12]- [14]. Since the OLED luminance can be represented as a product of the OLED efficiency in (1) and the pixel driving current in (2) [11], the OLED luminance (L OLED ) can be expressed as…”

Section: Proposed Temperature Compensation Methods a Oled Luminanmentioning

confidence: 99%

A Temperature Compensation Method by Adjusting Gamma Voltages for High Luminance Uniformity of Active Matrix Organic Light-Emitting Diode Displays

Hong

Kwon³

2020

IEEE J. Electron Devices Soc.

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In this paper, a temperature compensation method is proposed for active-matrix organic light-emitting diode (AMOLED) displays to achieve high luminance uniformity over a wide operating temperature range. The proposed temperature compensation method compensates for variation in OLED luminance according to temperature by adjusting the gamma voltages. To verify the proposed method, a built-in test circuit, which includes temperature sensors, current calculation block, current adjustment block, and gamma voltage generator, was fabricated using 90 nm complementary metal-oxide semiconductor process technology with 6 V high-voltage devices. The measurement results show that the proposed method achieves a high luminance uniformity with an OLED luminance variation of less than 1.54 cd/m 2 over the temperature range of −45 • C to 60 • C. Therefore, the proposed temperature compensation method is suitable for AMOLED displays requiring high luminance uniformity. INDEX TERMS Organic light-emitting diode (OLED), temperature compensation, high luminance uniformity, gamma voltage.

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“…Indeed, it was found previously that the temperature distribution across an OLED display is non-uniform, time-varying and a function of the image content [4]- [11]. Considering on the one hand the relationship between temperature and the intensity of the light emission of an OLED [12]- [17] and on the other hand the influence of temperature on the TFT characteristic [18]- [21], the thermal behavior of an OLED display has a direct impact on the picture quality. These findings indicate that a thorough understanding of the link between temperature and the light emission of an OLED display is crucial to understand the display's shortcomings and eventually realize OLED displays that are suitable for the medical display market.…”

Section: Introductionmentioning

confidence: 97%

Influence of Temperature on the Steady State and Transient Luminance of an OLED Display

Chesterman

Piepers

Kimpe

et al. 2016

J. Display Technol.

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Abstract-In this paper, the influence of temperature on the luminance of an organic light-emitting device (OLED) display is investigated. Luminance, temperature, and power measurements are executed on a 55-in white-red-green-blue active-matrix OLED display with a resolution of 1920 × 1080 and an oxide-thin-filmtransistor (TFT) backplane, under a controlled, static temperature environment. The measurements indicate a strong influence of temperature on the luminance of the display, resulting from the temperature dependence of both the TFT and the OLED. The influence of temperature on the luminance of an OLED display is also investigated in a dynamic context. Measurements show that temperature changes resulting from losses in the display have an important influence on the luminance stability of the display. The measurements linking luminance and temperature in a static temperature environment allow estimating the change in luminance in a dynamic context. Finally, this paper presents the results of a number of experiments that were set up to show scenarios in which the temperature dependence of the display's luminance has a direct negative impact on the picture quality of the display. The results of this work show that the thermal behavior of an OLED display must be taken into account when working towards a high-performing OLED display.

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Temperature Dependences of $I$– $V$ Characteristics of SD and LDD Poly-Si TFTs

Cited by 11 publications

References 14 publications

Fabrication and characterization of T-gate polysilicon thin-film transistors with lightly-doped drain

Fabrication and characterization of T-gate polysilicon thin-film transistors with lightly-doped drain

A Temperature Compensation Method by Adjusting Gamma Voltages for High Luminance Uniformity of Active Matrix Organic Light-Emitting Diode Displays

Influence of Temperature on the Steady State and Transient Luminance of an OLED Display

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