Temperature-dependent behavior of Ni/4H-nSiC Schottky contacts

Aydín, M.E.; Yıldırım, N.; Türüt, A.

doi:10.1063/1.2769284

Cited by 78 publications

(55 citation statements)

References 51 publications

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“…This suggested inhomogeneity at the Ge/SiC heterojunction interface, similar to several metal-semiconductor studies over the last two decades [8][9][10][11][12][13][14][15][16][17][18] . Inhomogeneities are imperfections at the interface between two materials.…”

Section: Introductionmentioning

confidence: 54%

“…Metal deposition, usually sputtering, and subsequent annealing produce a patched interface containing a mix of species and alloys [8][9][10] . Representative of this is the well known Ni-Ti based contact structure on 4H-SiC 36,37 .…”

Section: A Comparison Of the Resultsmentioning

confidence: 99%

“…Over an entire contact, the SBH is assumed to have a Gaussian distribution with a standard distribution (σ s ) about a mean SBH value (Φ 0 ). 8,9,11,12,15,16 Given this, many patches exist with a SBH significantly lower than the mean value explaining the I-V and C-V analysis discrepancy. When finding a path through the interface of the two materials, the carriers choose the path with the lowest barrier to overcome, the result being that the I-V analysis yields a barrier height (Φ IV ) that is lower than Φ 0 .…”

Section: Introductionmentioning

confidence: 99%

“…Inhomogeneities are imperfections at the interface between two materials. These are borne from the surface not being atomically flat due to grain boundaries, multiple phases, facets, defects etc 8 .…”

Section: Introductionmentioning

confidence: 99%

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Analysis of inhomogeneous Ge/SiC heterojunction diodes

Gammon

Pérez‐Tomás

Shah

et al. 2009

Journal of Applied Physics

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In this article Schottky barrier diodes comprising of a n-n Germanium-Silicon Carbide (Ge-SiC) heterojunction are electrically characterised. Circular transmission line measurements prove that the nickel front and back contacts are ohmic, isolating the Ge/SiC heterojunction as the only contributor to the Schottky behaviour. Current-voltage plots taken at varying temperature (IVT) reveal that the ideality factor (n) and Schottky barrier height (Φ) are temperature dependent and that incorrect values of the Richardson constant (A * * ) are being produced, suggesting an inhomogeneous barrier. Techniques originally designed for metal-semiconductor SBH extraction are applied to the heterojunction results to extract values of Φ and A * * that are independent of temperature. The experimental IVT data is replicated using the Tung model. It is proposed that small areas, or patches, making up only 3% of the total contact area will dominate the I-V results due to their low SBH of 1.033 eV. The experimental IVT data is also analysed statistically using the extracted values of Φ to build up a Gaussian distribution of barrier heights, including the standard deviation and a mean SBH of 1.126 eV, which should be analogous to the SBH extracted from capacitance-voltage (C-V) measurements. Both techniques yield accurate values of A * * for SiC. However, the C-V analysis did not correlate with the mean SBH as expected.

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Section: Introductionmentioning

confidence: 54%

Section: A Comparison Of the Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Analysis of inhomogeneous Ge/SiC heterojunction diodes

Gammon

Pérez‐Tomás

Shah

et al. 2009

Journal of Applied Physics

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“…This increase in barrier height with increasing temperature is the same behavior at the forward bias, where the thermionic model is used. The authors attributed this temperature dependence to the barrier height inhomogeneities prevailing at the metal-semiconductor interface [19], [32]- [34]. The Schottky barrier height on SiC is, in general, determined by both the metal work function and the interface states [35].…”

Section: Resultsmentioning

confidence: 99%

Reverse bias-dependence of schottky barrier height on silicon carbide: influence of the temperature and donor concentration

Latreche¹

2014

International Journal of Physical Research

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The work deals with the dependences of the Schottky barrier height (SBH) on the reverse bias voltage, temperature and on donor concentration of metal/4H-SiC Schottky diodes. Using the tunneling modeling we have shown that the Schottky barrier height on silicon carbide strongly depends on the reverse bias voltage, temperature and doping concentration. At room temperature, the Schottky barrier height increases with increasing the reverse bias voltage at high doping concentration (about 10 16 cm -3 ), while, at low doping concentration (about 10 15 cm -3 ) the Schottky barrier height decreases with increasing the reverse bias voltage. These behaviors are independent of the Schottky barrier lowering effect. That means other effects occur at the barrier and depend on the reverse applied bias. The barrier height increases with increasing temperature and doping concentration under reverse bias conditions. The barrier heights extracted from the Padovani-Stratton formulas are close to the barrier heights extracted from the Tsu-Esaki formula in particular for the thermionic-field emission.

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New study of the abnormal behavior of the low temperature dependence of the current in inhomogeneous Schottky diode

Latreche¹,

Ouennoughi

2014

Int J Numerical Modelling

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In this study, we show clearly why unexpected observations have been reported in the current-voltage curves of Schottky diodes, containing barrier inhomogeneities generated by using the analytical results based on a Gaussian distribution model of barrier heights. The Chand's calculations have shown that the current (saturation current) at low temperatures may exceed the current (saturation current) at high temperatures when the effective barrier height is calculated from an appropriate integral with integration limits À∞ and +∞. In this new study, we show that the method followed by Chand to remove these anomalies is not accurate enough. We prove that the origin of these anomalies stems from the nature of a proper function f(ϕ) that moves to the negative barrier heights and takes large value of the integral at low temperatures than at high temperatures when it has large standard deviation (σ) and the discrepancies are not due to the integration limits as Chand concluded. In order to obtain results consistent with the thermionic emission-diffusion theory, the standard deviation must have lower values.

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Temperature-dependent behavior of Ni/4H-nSiC Schottky contacts

Cited by 78 publications

References 51 publications

Analysis of inhomogeneous Ge/SiC heterojunction diodes

Analysis of inhomogeneous Ge/SiC heterojunction diodes

Reverse bias-dependence of schottky barrier height on silicon carbide: influence of the temperature and donor concentration

New study of the abnormal behavior of the low temperature dependence of the current in inhomogeneous Schottky diode

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