Temperature dependent characteristics of graphene/silicon Schottky junction

Anwar, Muhammad Abid; Dong, Shurong; Wong, Hei

doi:10.1504/ijnt.2020.109346

Cited by 2 publications

(1 citation statement)

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“…Therefore, it is significant to integrate 2D materials into Si to develop a heterogeneous integration technology so it can make full use of the superiorities of Si and 2D materials. To this end, there have been some reports which tried 2D-materials/Si heterojunction devices that exhibited excellent properties in electronics and optoelectronics, such as graphene/Si, [23,24] MoS 2 /Si [25,26] and WS 2 /Si. [27,28] However, so far, few works have been carried out to push forward the field-effect diodes based on heterogeneous 2D ambipolar semiconductor and Si.…”

Section: Introductionmentioning

confidence: 99%

A field-effect WSe₂/Si heterojunction diode

Yu¹,

Sheng²,

Hu³

et al. 2023

Chinese Phys. B

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It is significant to develop a heterogeneous integration technology to promote the application of two dimensional (2D) materials in silicon roadmap. In this paper, we reported a field-effect WSe2/Si heterojunction diode based on ambipolar 2D WSe2 and silicon on insulator (SOI). Our results indicate that the device exhibits a p-n diode behavior with a rectifying ratio of ~300 and an ideality factor of 1.37. As a photodetector, it has optoelectronic properties with a response time of 0.13 ms, responsivity of 0.045 A/W, detectivity of 4.5 × 1010 Jones and external quantum efficiency (EQE) of 8.9 %. Due to the ambipolar behavior of the WSe2, the rectifying and optoelectronic properties of the heterojunction diode are of the ability to be modulated by the gate electrical field, enabling various potential applications such as logic optoelectronic devices and neuromorphic optoelectronic devices for in-sensor computing circuits. Thanks to the process based on the mature SOI technique, our field-effect heterojunction diode should have obvious advantages in device isolation and integration.

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