Temperature dependent DC characterization of InAlN/(AlN)/GaN HEMT for improved reliability

Takhar, Kuldeep; Gomes, U P; Ranjan, Kumud; Rathi, Servin; Biswas, Dhrubes

doi:10.1088/1757-899x/73/1/012001

Cited by 5 publications

(4 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…33 Such superficial chemical variations can harm the quality of 2DEG density, decreasing also the electron mobility and the sheet carrier density when temperatures above 800 • C are employed. [34][35][36] On the basis of previous considerations, if we consider binary compounds separately, AlN is known to be stable up to 1250 • C, 37 whereas InN is known to be stable up to 550 • C [38][39][40] and decomposes above this temperature into N 2 and liquid In. Only few studies concern the chemical stability of InAlN layers through annealing temperatures.…”

mentioning

confidence: 99%

Investigation of InAlN Layers Surface Reactivity after Thermal Annealings: A Complete XPS Study for HEMT

Bourlier

Bouttemy

Patard

et al. 2018

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

The surface chemistry of InAlN ultra-thin layers, having undergone an oxidation procedure usually running through the HEMT fabrication process (850 • C, O 2 and O 2 +Ar) is studied by XPS. The suitability of XPS analysis to operate as a retro-engineering tool for added value microelectronic devices fabrication is shown. A precise examination of the Al2p, In3d 5/2 , N1s, and O1s peaks directly informs about spatial and atomic arrangement. The formation of a covering 3 nm surface oxide is evidenced after O 2 annealing. Once annealed, two specific additional N1s contributions are shown, at higher (404.0 eV) and lower binding energies (397.4 eV) compared to the InAlN matrix one (396.5 eV). To our knowledge, such fingerprint is rather unusual for ternary III-V materials. It reveals the formation of a nitrogen deficient interlayer, situated between the oxide overlayer and the undisturbed matrix, and the presence of interstitial N 2 molecules trapped at the interface. After Ar annealing, both oxide and interface layers are partially reorganized. InAlN reactivity toward higher annealing temperature (950 • C) and its stability over time is finally discussed. N 2 molecules are unstable and progressively eliminated in time although nitrogen deficient interlayer still remains. Thermal treatments below 850 • C are recommended to preserve the barrier chemical integrity.

show abstract

mentioning

confidence: 99%

Investigation of InAlN Layers Surface Reactivity after Thermal Annealings: A Complete XPS Study for HEMT

Bourlier

Bouttemy

Patard

et al. 2018

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…Besides, the AlN nucleation layer or multiple layers of AlN and AlGaN with varying concentrations of Al forming a transition scheme are necessary to reduce the lattice mismatch for GaN grown on Si [24,25]. Despite low-TC (42 W/m-K at RT), many research-groups have recently demonstrated the outstanding performance of the GaN-material based devices with the sapphire substrate [23][24][25][26][27][28][29][30][31][32]. Therefore, sapphire has become an excellent choice as a substrate due to its high crystalline quality, lattice constant matching with GaN, low cost of wafers, and availability in larger wafer sizes.…”

Section: Introductionmentioning

confidence: 99%

Influence of AlN passivation on thermal performance of AlGaN/GaN high-electron mobility transistors on sapphire substrate: A simulation study

Murugapandiyan

Nirmal

Hasan³

et al. 2021

Materials Science and Engineering: B

View full text Add to dashboard Cite

“…However, an oxidation of InAlN surface may occur during the annealing step required for ohmic contact, 5 damaging the quality of the two-dimensional electron gas at the interface and so the transistor performances. 6 To prevent such degradation, a passivation step with a controlled oxide growth at the surface can be used. Here, thermal oxidation is employed to generate an Al 2 O 3 -rich surface oxide layer.…”

Section: Introductionmentioning

confidence: 99%

“…III–V nitride materials are generally considered to be highly stable at working temperature. However, an oxidation of InAlN surface may occur during the annealing step required for ohmic contact, 5 damaging the quality of the two‐dimensional electron gas at the interface and so the transistor performances 6 . To prevent such degradation, a passivation step with a controlled oxide growth at the surface can be used.…”

Section: Introductionmentioning

confidence: 99%

In‐depth analysis of InAlN/GaN HEMT heterostructure after annealing using angle‐resolved X‐ray photoelectron spectroscopy

Bourlier

Bouttemy

Frégnaux

et al. 2020

Surface & Interface Analysis

View full text Add to dashboard Cite

During high-electron-mobility transistor elaboration process, a thermal treatment of In 0.2 Al 0.8 N (InAlN) barrier layer is performed in order to improve electrical performances. We showed previously that In 0.2 Al 0.8 N/GaN heterostructures, annealed at 850 C under O 2 partial pressure, present a specific in-depth organization. Angleresolved X-ray photoelectron spectroscopy is a powerful tool to precisely determine the spatial localization and relative position of the different interfaces, from InAlN until buried GaN layer. The proposed in-depth model of the stack evidences (1) an Al-rich surface oxide with embedded N 2 molecules, (2) an interlayer of InAlN <1 governed by nitrogen lattice defects, (3) a stable In 0.2 Al 0.8 N matrix, and finally (4) the GaN buffer layer underneath.

show abstract

Temperature dependent DC characterization of InAlN/(AlN)/GaN HEMT for improved reliability

Cited by 5 publications

References 7 publications

Investigation of InAlN Layers Surface Reactivity after Thermal Annealings: A Complete XPS Study for HEMT

Investigation of InAlN Layers Surface Reactivity after Thermal Annealings: A Complete XPS Study for HEMT

Influence of AlN passivation on thermal performance of AlGaN/GaN high-electron mobility transistors on sapphire substrate: A simulation study

In‐depth analysis of InAlN/GaN HEMT heterostructure after annealing using angle‐resolved X‐ray photoelectron spectroscopy

Contact Info

Product

Resources

About