Temperature-Dependent Dynamic &lt;inline-formula&gt; &lt;tex-math notation="LaTeX"&gt;$R_{\mathrm {\mathrm{{\scriptstyle ON}}}}$ &lt;/tex-math&gt;&lt;/inline-formula&gt; in GaN-Based MIS-HEMTs: Role of Surface Traps and Buffer Leakage

Meneghini, Matteo; Vanmeerbeek, P.; Silvestri, Riccardo; Dalcanale, Stefano; Banerjee, Abhishek; Bisi, Davide; Zanoni, Enrico; Meneghesso, Gaudenzio; Moens, P.

doi:10.1109/ted.2014.2386391

Cited by 103 publications

(37 citation statements)

References 18 publications

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“…For the GaN:C layer this means that trap responses in substrate bias transient experiments or DLTS would have a minimum time constant in the range 1-100s for the compensation ratios discussed earlier. Typically, carbon doped transistors show transient time constants in the 1-1000 seconds range [19] consistent with the resistivity discussed earlier.…”

Section: Introductionsupporting

confidence: 82%

“Leaky Dielectric” Model for the Suppression of Dynamic $R_{\mathrm{ON}}$ in Carbon-Doped AlGaN/GaN HEMTs

Uren

Karboyan

Chatterjee

et al. 2017

IEEE Trans. Electron Devices

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189

112

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Section: Introductionsupporting

confidence: 82%

“Leaky Dielectric” Model for the Suppression of Dynamic $R_{\mathrm{ON}}$ in Carbon-Doped AlGaN/GaN HEMTs

Uren

Karboyan

Chatterjee

et al. 2017

IEEE Trans. Electron Devices

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189

112

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“…Furthermore, a very low drain-substrate leakage current was also observed during 300 V vertical bias supply as shown in figure 9(c). The well-controlled vertical GaN buffer leakage current has been shown to be able to suppress the trapping effects on the back gating stress operation [27]. Therefore, the weak Ron increased in figure 9(a) indicates that the substrate-related trapping process can effectively eliminated by the high quality GaN buffer structure in this study.…”

Section: Trapping Mechanisms In Gan-based Mis-hemtsmentioning

confidence: 78%

“…These results suggest that the phenomena causing the R on temporary increase during time might be related to electron capture processes. Figure 7(b) reports the time constant spectra [25] extracted from R on transients in figure 7(a): the time constants are extrapolated by fitting the curves based on a stretched exponential function (black solid line in figure 7(a)); the derivative spectrum (dR on /dlog(t) waveform) for each tested has a clear peak, with relatively slow time constant (in the time interval of 10-70 s) [11,13]. Remarkably, increasing drain potential yields a dramatic decrease in the time constant associated with the transient response.…”

Section: Trapping Mechanisms In Gan-based Mis-hemtsmentioning

confidence: 99%

“…In more mature lateral GaN technology, dynamic switching problems still present a limitation on the market penetration of these devices. Several papers investigated the time resolved dynamic R on transients performed in off-state and back-gating stresses, suggesting the unique dominant trapping mechanisms related to the surface and to GaN buffer [11][12][13]. Conversely, systematic descriptions of the correlation of hot electrons-related charge-trapping and surface-state creation for devices stressed in semi-on state are rarely reported in the literature [14,15].…”

Section: Introductionmentioning

confidence: 99%

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Comprehensive dynamic on-resistance assessments in GaN-on-Si MIS-HEMTs for power switching applications

Chou

Hsieh

Cheng

et al. 2018

Semicond. Sci. Technol.

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This study comprehensively analyzed the reliability of trapping and hot-electron effects responsible for the dynamic on-resistance (Ron) of GaN-based metal-insulator-semiconductor high electron mobility transistors. Specifically, this study performed the following analyses. First, we developed the on-the-fly Ron measurement to analyze the effects of traps during stress. With this technique, the faster one (with a pulse period of 20 ms) can characterize the degradation; the transient behavior could be monitored accurately by such short measurement pulse. Then, dynamic Ron transients were investigated under different bias conditions, including combined off state stress conditions, back-gating stress conditions, and semi-on stress conditions, in separate investigations of surface-and buffer-, and hot-electron-related trapping effects. Finally, the experiments showed that the Ron increase in semi-on state is significantly correlated with the high drain voltage and relatively high current levels (compared with the offstate current), involving the injection of greater amount of hot electrons from the channel into the AlGaN/insulator interface and the GaN buffer. These findings provide a path for device engineering to clarify the possible origins for electron traps and to accelerate the development of emerging GaN technologies.

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“…The test structures had the same HEMT layout but no gate electrodes. To evaluate the effects of buffer‐related trapping, the measurement using the backgating bias condition described in reference and the simple test structure measurement described in reference were performed in this study.…”

Section: Methodsmentioning

confidence: 99%

Determination of Suitable Indicators of AlGaN/GaN HEMT Wafer Quality Based on Wafer Test and Device Characteristics

Zhong

Tang

Hsin

2017

Physica Status Solidi (a)

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This study investigates various tests on AlGaN/GaN high electron mobility transistor (HEMT) wafers, including photoluminescence spectroscopy, secondary ion mass spectroscopy, X‐ray diffraction (XRD), and Hall measurement. The AlGaN/GaN HEMT wafers are grown on low‐resistivity Si substrates with various growth conditions for the buffer and channel layers. Characteristics of AlGaN/GaN HEMTs including drain lag, dynamic RON, and current transients were measured and correlated with the results from the wafer level tests. Results indicate that epitaxial wafers with low yellow luminescence (YL) to band edge (BE) and blue luminescence (BL) to BE ratios as well as a low carbon concentration but a similar low full width at half maximum of XRD profiles can result in devices with significant suppression of current collapse and the same on‐state device characteristics. Therefore, both YL/BE and BL/BE values combined with the carbon concentration in wafer level tests are suitable indicators for estimating device performance.

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Temperature-Dependent Dynamic <inline-formula> <tex-math notation="LaTeX">$R_{\mathrm {\mathrm{{\scriptstyle ON}}}}$ </tex-math></inline-formula> in GaN-Based MIS-HEMTs: Role of Surface Traps and Buffer Leakage

Cited by 103 publications

References 18 publications

“Leaky Dielectric” Model for the Suppression of Dynamic $R_{\mathrm{ON}}$ in Carbon-Doped AlGaN/GaN HEMTs

“Leaky Dielectric” Model for the Suppression of Dynamic $R_{\mathrm{ON}}$ in Carbon-Doped AlGaN/GaN HEMTs

Comprehensive dynamic on-resistance assessments in GaN-on-Si MIS-HEMTs for power switching applications

Determination of Suitable Indicators of AlGaN/GaN HEMT Wafer Quality Based on Wafer Test and Device Characteristics

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