Temperature dependent electrical characteristics of Sn/p-Si Schottky diodes

Ayyıldız, E.; Çetin, H.; Horváth, Zs. J.

doi:10.1016/j.apsusc.2005.02.044

Cited by 68 publications

(48 citation statements)

References 31 publications

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“…Ideality factors greater than 1.0 indicate that the transport properties are not well modeled by thermionic emission alone although the contacts remain rectifying [48]. Explanations for the deviation of the ideality factor from unit ranged from assumptions of a generation-recombination current in the space-charge region [5,8,17] to interface dielectric layers to field emission [17] to thermionic field emission [49] due to secondary mechanisms at the interface [30,50]. For example, interface defects may lead to a lateral inhomogeneous distribution of BHs at the interface, resulting in the presence of a wide distribution of low-SBH patches and in excess current leading to a deviation from ideal thermionic emission behavior at low voltages and temperatures.…”

Section: Resultsmentioning

confidence: 99%

Correlation Between Barrier Heights and Ideality Factors of Ni/n-Ge (100) Schottky Barrier Diodes

Chawanda

Nel²,

Auret³

et al. 2010

J. Korean Phy. Soc.

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We computed the homogeneous Schottky barrier height (SBH) at ideality factor (n) = 1.0 of Ni/nGe (100) Schottky diodes (SDs). The SDs were identically prepared by using resistive evaporation of Ni on n-Ge (100). The SBHs and n of these diodes (24 dots) were calculated from their experimental forward bias current-voltage (I-V ) and reverse bias capacitance-voltage (C-V ) measurements at room temperature. Even though the Schottky diodes were identically prepared, the values of the SBH from the I-V characteristics varied from 0.487 to 0.508 eV, the ideality factor varied from 1.34 to 1.53, and the SBH from the C −2 -V characteristics varied from 0.358 to 0.418 eV. The Gaussian fits of the experimental SBH distributions obtained from the C −2 -V and the I-V characteristics yielded mean SBH values of 0.401 ± 0.015 and 0.503 ± 0.006 eV, respectively. Furthermore, a homogeneous SBH value of approximately 0.535 eV was also computed from an extrapolation of a linear plot of the experimental SBHs versus the ideality factors. The homogeneous SBHs, rather than the effective SBHs, of individual contacts or mean values should be used to discuss the theories and the physical mechanisms that determine the SBHs of SDs.

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Section: Resultsmentioning

confidence: 99%

Correlation Between Barrier Heights and Ideality Factors of Ni/n-Ge (100) Schottky Barrier Diodes

Chawanda

Nel²,

Auret³

et al. 2010

J. Korean Phy. Soc.

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“…This temperature effect (of the barrier height and ideality factor in Schottky diodes) is called the T 0 effect. 27,28 The T 0 effect can be connected either with the lateral inhomogeneity of the barrier height or with the role of the recombination, interface state density distribution, 29,30 image force lowering, 31 and tunneling current components. 27,28,32 Some authors have mentioned that the ideality factor, barrier height, saturation current and all functions derived from them can be explained and connected with the lateral distribution of barrier height due to local enhancement of electric field which can also yield a local reduction of the barrier height.…”

Section: -2mentioning

confidence: 99%

Systematic study of interface trap and barrier inhomogeneities using I-V-T characteristics of Au/ZnO nanorods Schottky diode

Hussain

Soomro

Bano

et al. 2013

Journal of Applied Physics

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This paper presents in-depth analysis of I-V-T characteristics of Au/ZnO nanorods Schottky diodes. The temperature dependence I-V parameters such as the ideality factor and the barrier heights have been explained on the basis of inhomogeneity. Detailed and systematic analysis was performed to extract information about the interface trap states. The ideality factor decreases, while the barrier height increases with increase of temperature. These observations have been ascribed to barrier inhomogeneities at the Au/ZnO nanorods interface. The inhomogeneities can be described by the Gaussian distribution of barrier heights. The effect of tunneling, Fermi level pinning, and image force lowering has contribution in the barrier height lowering. The recombination-tunneling mechanism is used to explain the conduction process in Au/ZnO nanorods Schottky diodes. The ionization of interface states has been considered for explaining the inhomogeneities.

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“…Such excess current resulting from non-uniform Schottky contacts has extensively been reported in electronic device literature. [52][53][54][55][56][57][58][59][60][61][62][63][64] A realistic model for calculating (I-V) characteristics considers a distribution of low barrier height patches ðqU HOM B À D P Þ embedded in an extended region of homogeneous but larger barrier heights ðqU HOM B Þ. When the Schottky barrier height varies with large amplitudes on small lateral length scale, the conduction path in front of a patch with low barrier height is partially blocked by the presence of high barrier height patches in its close proximity.…”

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confidence: 99%

Barrier height distribution and dipolar relaxation in metal-insulator-semiconductor junctions with molecular insulator: Ageing effects

Fadjie-Djomkam

Ababou‐Girard

Godet

2012

Journal of Applied Physics

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To cite this version:Alain-Bruno Fadjie-Djomkam, Soraya Ababou-Girard, Christian Godet. Barrier height distribution and dipolar relaxation in metal-insulator-semiconductor junctions with molecular insulator: Ageing effects. Journal of Applied Physics, American Institute of Physics, 2012, 112, pp.113701-1-113701-11 Related ArticlesAtomic layer deposition of Al2O3 on GaSb using in situ hydrogen plasma exposure Appl. Phys. Lett. 101, 231601 (2012) Defect induced mobility enhancement: Gadolinium oxide (100) on Si(100) Appl. Phys. Lett. 101, 222903 (2012) Band alignment in Ge/GeOx/HfO2/TiO2 heterojunctions as measured by hard x-ray photoelectron spectroscopy Appl. Phys. Lett. 101, 222110 (2012) Electronic properties at the oxide interface with silicon and germanium through x-ray induced oxide charging Appl. Phys. Lett. 101, 211606 (2012) A computational study of graphene silicon contact J. Appl. Phys. 112, 104502 (2012) Additional information on J. Appl. Phys. Electrical transport through molecular monolayers being very sensitive to disorder effects, admittance and current density characteristics of Hg//C 12 H 25 -n Si junctions incorporating covalently bonded n-alkyl molecular layers, were investigated at low temperature (150-300 K), in the as-grafted state and after ageing at the ambient. This comparison reveals local oxidation effects both at the submicron scale in the effective barrier height distribution and at the molecular scale in the dipolar relaxation. In the bias range dominated by thermionic emission and modified by the tunnel barrier (TB) attenuation, expðÀb 0 d T Þ, where d T is the thickness of the molecular tunnel barrier and b 0 is the inverse attenuation length at zero applied bias, some excess current is attributed to a distribution of low barrier height patches.Complementary methods are used to analyze the current density J(V, T) characteristics of metal-insulator-semiconductor tunnel diodes. Assuming a Gaussian distribution of barrier heights centered at qU B provides an analytical expression of the effective barrier height, qU EFF ðTÞ ¼ qU B þ ðkTÞb 0 d T À ðqdUÞ 2 =2kT; this allows fitting of the distribution standard deviation dU and tunnel parameter ðb 0 d T Þ over a wide temperature range. In a more realistic modeling including the voltage dependence of barrier height and circular patch area, the so-called "pinch-off" effect is described by a distribution of parameter c ¼ 3ðD P R 2 P =4Þ 1=3 , which combines interface potential modulation and patch area variations. An arbitrary distribution of c values, fitted to low-temperature J(V) data, is equally well described by Gaussian or exponential functions. Ageing in air also increases the interface oxidation of Si substrate and affects the density of localized states near mid gap, which typically rises to the high 10 11 eV À1 cm À2 range, as compared with D S < 10 11 eV À1 cm À2 in the as-grafted state. The bias-independent relaxation observed near 1 kHz at low temperature may be attributed either to dipoles in the alkyl chain in...

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Temperature dependent electrical characteristics of Sn/p-Si Schottky diodes

Cited by 68 publications

References 31 publications

Correlation Between Barrier Heights and Ideality Factors of Ni/n-Ge (100) Schottky Barrier Diodes

Correlation Between Barrier Heights and Ideality Factors of Ni/n-Ge (100) Schottky Barrier Diodes

Systematic study of interface trap and barrier inhomogeneities using I-V-T characteristics of Au/ZnO nanorods Schottky diode

Barrier height distribution and dipolar relaxation in metal-insulator-semiconductor junctions with molecular insulator: Ageing effects

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