Temperature-dependent electrical properties of HgSe

The growth of HgSe by molecular beam epitaxy for ohmic contacts to p-ZnSe

“…6. The dashed line is the expected behavior, calculated using the method and parameters published for bulk HgSe [13]. Assuming that the band structure parameters are correct, the deviation for MBE grown HgSe can be explained by (1) postulating more than one type of charge carriers, (2) assuming a temperature dependence for the aonor concentration, or (3) supposing different scattering mechanisms which would change the carrier concentration as calculated from the experimental Hall constant.…”

Transport Properties of CdvHg1–vSe Crystals

“…These parameters may be expected to have only very small composition or temperature dependence, as they are in the similar system Cd,Hgl-,Te [ll]. We took [12], mi = = 0.783m0, and AE = 0.005 eV [13]. By fitting the calculated Hall coefficients to the experimental data one may determine the values of the energy gap E , and matrix elements P a t different temperature and for different compositions.…”

“…I n the calculation of electron mobility the only parameters which we fitted were ~~( 3 0 0 K) and ~~( 3 0 0 K), the static and high-frequency dielectric function a t T = 300 K, respectively. The value of wT (frequency of transverse optical phonon) we determined from Szigeti relation [21] in the manner described in [13].…”

Development of the HgCdSe Alloy System for Infrared Sensor Applications.

“…'tc ~t --, 'xh u eri bhit 'nta l p l u -us i ' di.u g r .im ( F i g u r i 5) and used in E quma t ions (9) and ( 1 0 ) to c~m I. -~ exp er ime nt ,ml error On ott , -v,m liii ' of B 5 /RT , b o t h ti m e z i n ch l e n d e and w u r t z i tS t rim e t t u r e s h a v e n e .…”