2003
DOI: 10.1002/pssc.200303219
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Temperature dependent excitonic relaxation in CdSe/ZnSe quantum islands: experiment and computer simulation

Abstract: In this contribution, a Monte-Carlo computer simulation of phonon-assisted relaxation processes of excitons in CdSe/ZnSe quantum islands is presented. With the same set of parameters, it was possible to reproduce both the temperature dependence of the energy position and of the full width at half maximum (FWHM) of the luminescence emitted from a ZnCdSe quantum film containing 5 to 10 nm wide Cd-rich islands. With help of the model, the energy dependence of the distribution of the localized states is shown to b… Show more

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Cited by 4 publications
(2 citation statements)
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“…Our overall analysis reveals the band‐tail PL emission from FAPbI 3 to be consistent with typical behavior for an inorganic semiconductor, described by a band‐structure picture with a relatively modest degree of energetic disorder as reflected by spatial variation of the bandgap energy. The maximum value of the anomalous relative Stokes shift we observe for FAPbI 3 at low charge‐carrier densities (≈40 meV) is similar to the values observed in other inorganic semiconductors such as AlInGaN (≈45 meV), GaInNAs (≈55 meV), and CdSe/ZnSe (≈20 meV), and band‐tail emission has also been observed in CIGS and CZTS . Despite often being misidentified until represented on a log‐log plot, power‐law luminescence decays have also been identified in a range of systems, including semiconductor quantum dots, dye‐sensitized nanoparticle films, and semiconductors such as hydrogenated amorphous Si,[54a] p‐type GaAs, and GaP .…”
Section: Resultssupporting
confidence: 76%
“…Our overall analysis reveals the band‐tail PL emission from FAPbI 3 to be consistent with typical behavior for an inorganic semiconductor, described by a band‐structure picture with a relatively modest degree of energetic disorder as reflected by spatial variation of the bandgap energy. The maximum value of the anomalous relative Stokes shift we observe for FAPbI 3 at low charge‐carrier densities (≈40 meV) is similar to the values observed in other inorganic semiconductors such as AlInGaN (≈45 meV), GaInNAs (≈55 meV), and CdSe/ZnSe (≈20 meV), and band‐tail emission has also been observed in CIGS and CZTS . Despite often being misidentified until represented on a log‐log plot, power‐law luminescence decays have also been identified in a range of systems, including semiconductor quantum dots, dye‐sensitized nanoparticle films, and semiconductors such as hydrogenated amorphous Si,[54a] p‐type GaAs, and GaP .…”
Section: Resultssupporting
confidence: 76%
“…A fit of Δε( x ) and 〈ε〉 Stokes ( x ), as measured by Parrott et al., requires quantitative relations between ε 0 ( x ) on the one hand and Δε( x ) and 〈ε〉 Stokes ( x ) on the other hand. Computer simulations [ 14,15 ] predict that Δε( x ) ≈ βε 0 ( x ) and 〈ε〉 Stokes ( x ) ≈ γε 0 ( x ) with factors β and γ varying in the range 2 ≲ β, γ ≲ 8, depending on material parameters and on temperature. Without requiring the precise values for β and γ, this comment elucidates the excellent agreement between the values x a , b for the maxima of the disorder energy scale ε 0 ( x ), as predicted by Equations (1), (2), and (3), and the Sn concentrations for the maximal disorder effects in the luminescence linewidth Δε( x ) and in the Stokes shift 〈ε〉 Stokes ( x ), observed by Parrott et al.…”
Section: Figurementioning
confidence: 99%