Temperature dependent He-enhanced damage and strain in He-implanted AlN

Jublot-Leclerc, S.; Pallier, F.; Delauche, L.; Declémy, A.

doi:10.1016/j.jnucmat.2019.06.025

Cited by 9 publications

(9 citation statements)

References 48 publications

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“…Between these two extremes, oscillations are observed that result from interferences between two layers of material that are equally strained on either side of the most strained region. The presence of interference fringes for both temperatures of implantation and up to the highest fluence indicates that the crystal coherency is maintained, which means that there is no continuous amorphous layer [48], as expected [39] and in accordance with TEM results. The relatively low scattered intensity that is observed for the highest measured strains, though, indicates a certain level of disorder, or point defect clustering, via a low Debye-Waller factor [42].…”

Section: Xrd Resultssupporting

confidence: 84%

“…Unlike the RT condition, this damaged layer has a strong contrast, and defects in the form of small segments can be distinguished. They are frequently observed in nitrides and were previously identified as being basal stacking faults (BSFs) [Refs in 39,45]. In this orientation ( Fig.2(b)), defects seem also present up to the surface of the specimen, but they are in far less concentration than in the main defect layer, and also much smaller.…”

Section: Tem Resultsmentioning

confidence: 63%

“…A previous study performed on AlN layers grown on both sapphire and SiC substrates has shown a significant difference in the state of advancement of damage build-up induced by He implantation in the two materials [39]. A different density of native dislocations was suggested as the reason for this result.…”

Section: Comparison Between Mti and Mse Wafersmentioning

confidence: 86%

“…XRD experiments were carried out at Pprime in the Bragg (reflection) geometry on an automated laboratory-made two-circle goniometer with the radiation Ka1 of copper (l = 1.5405 Å) provided by a 5 kW RIGAKU RU-200 generator with a vertical linear focus in combination with a quartz monochromator. Previous X-ray reciprocal space mapping experiments on ion implanted AlN films have shown that the implantation-induced lattice strain is only directed along the surface normal direction (reciprocal space map not shown in [39], [41]). q-2q scans were carried out near the (0002) Bragg reflection (2qB = 36.02°) using 0.005 stepping motors.…”

Section: Methodsmentioning

confidence: 98%

“…The depth distribution of vacancy and He concentrations calculated by SRIM [38] in full cascades mode were displayed in a previous publication (see Fig. 1 in [39]). The mean projected range of ions, RP, and the peak of damage, RD, are estimated to be close to 280 and 260 nm, respectively.…”

Section: Methodsmentioning

confidence: 99%

See 4 more Smart Citations

Temperature dependence of elastic strain and damage build-up in He implanted AlN

Jublot-Leclerc

Bouhali

Pallier

et al. 2021

Journal of the European Ceramic Society

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The elastic strain build-up and damage induced by 50 keV He implantation at RT and 550°C into (0001)AlN were studied using a combination of XRD experiments, XRD simulation, and TEM experiments. Evidence for strong dynamic annealing with efficient point defect recombination is reported at RT. The point defect recombination is found to be enhanced with increasing implantation temperature where He concentration is low, indicating increased mobility of interstitial-type defects and resulting in low strain. A reversed effect is observed for He concentration exceeding 5 at.% (3 at.%) at RT (550°C) : thermally activated mechanisms related to the nucleation and growth of He-V complexes overcome the point defect recombination and promote the strain and damage build-up. At 1x10 17 cm-2 , only clusters of interstitials are observed at RT, whilst bubbles and basal stacking faults are additionally formed at 550°C for a critical He concentration estimated to be close to 4-6 at.%.

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Section: Xrd Resultssupporting

confidence: 84%

Section: Tem Resultsmentioning

confidence: 63%

Section: Comparison Between Mti and Mse Wafersmentioning

confidence: 86%

Section: Methodsmentioning

confidence: 98%

Section: Methodsmentioning

confidence: 99%

See 3 more Smart Citations

Temperature dependence of elastic strain and damage build-up in He implanted AlN

Jublot-Leclerc

Bouhali

Pallier

et al. 2021

Journal of the European Ceramic Society

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Giant Piezoelectricity of Deformed Aluminum Nitride Stabilized through Noble Gas Interstitials for Energy Efficient Resonators

Fiedler

Fuchs

Leveneur

et al. 2021

Adv Elect Materials

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Aluminum nitride (AlN) is a material for a wide range of microwave‐frequency electronics devices, because of its piezoelectric properties and high chemical stability. To improve the performance of AlN‐based devices, such as acoustic wave filters and energy harvesters, an increased piezoelectric modulus is desirable. Here, an increase of the piezoelectric modulus d33 of this material is achieved by ion implantation of noble gases. For a fluence of 3 × 1016 at cm−2 Ar+, a 30% increase of d33 of AlN is obtained. The improvement is attributed to noble gas atoms implanted into interstitial sites of the wurtzite structure, causing a strong deformation of wurtzite AlN. Density functional theory calculations reveal the formation of deformed, metastable AlN with a 350% increase of the longitudinal piezoelectric coefficient. The ion implantation conditions to prepare AlN with a high piezoelectric coefficient are discussed and verified by X‐ray diffraction, Raman spectroscopy, and scanning transmission electron microscopy. Heavier elements, larger fluences, and an implantation angle not aligned to the wurtzite crystal are preferred since those conditions generate tetrahedrally coordinated interstitials. In contrast, the opposite conditions lead to octahedrally coordinated interstitials prior to relaxation, which activates the silent B1high phonon vibration and results in a reduced piezoelectric coefficient.

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Microstructure Evolution of AlN:Eu Films at Different Annealing Temperatures

Zeng

Wang

et al. 2023

Physica Status Solidi (a)

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The microstructure evolution of AlN implanted with Eu during thermal treatment is characterized by transmission electron microscopy (TEM), high‐resolution X‐ray diffraction, and atomic force microscopy. Three regions with different contrast can be observed in the TEM for the implanted samples. The region A is 30 nm below the surface, the region B is about 30–100 nm below the surface and is the worst damaged area, and the region C is the area below the region B. There is a relatively large stress in the region B due to the large radius difference between Eu and Al ions. After annealing at 750 °C, the stress in region B is only partially released outward, resulting in the increase of lattice defects in regions A and C. Both A and C regions show the same contrast in the weak‐beam bright‐field image. After annealing at 1040 °C, there are almost no shadow regions, which indicates that the stress is completely released and the lattice damage is removed. Meanwhile, the results of cathodoluminescence (CL) show that the luminescence of Eu3+ is improved along with the stress releasing and damage removal.

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Temperature dependent He-enhanced damage and strain in He-implanted AlN

Cited by 9 publications

References 48 publications

Temperature dependence of elastic strain and damage build-up in He implanted AlN

Temperature dependence of elastic strain and damage build-up in He implanted AlN

Giant Piezoelectricity of Deformed Aluminum Nitride Stabilized through Noble Gas Interstitials for Energy Efficient Resonators

Microstructure Evolution of AlN:Eu Films at Different Annealing Temperatures

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