Quantum Well Intersubband Transition Physics and Devices 1994
DOI: 10.1007/978-94-011-1144-7_36
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Temperature Dependent Intersubband Dynamics in N — Modulation Doped Quantum Well Structures

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Cited by 6 publications
(2 citation statements)
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“…The use of a solid film reduces the 300 K intersubband relaxation time from that which is otherwise expected for the same sample in solution at room temperature, as shown in Figure b. CQW intersubband relaxation becomes faster at higher sample temperatures (Figure c), consistent with previous spectroscopic results and known thermal constraints of QCLs and QWIPs . As samples are cooled, the ambient population of phonons, which is also reflected in the similar trend of the full-width at half-maximum of the intersubband absorption in Figure c is reduced and relaxation slows to a rate limited by phonon emission .…”
Section: Results and Discussionsupporting
confidence: 85%
“…The use of a solid film reduces the 300 K intersubband relaxation time from that which is otherwise expected for the same sample in solution at room temperature, as shown in Figure b. CQW intersubband relaxation becomes faster at higher sample temperatures (Figure c), consistent with previous spectroscopic results and known thermal constraints of QCLs and QWIPs . As samples are cooled, the ambient population of phonons, which is also reflected in the similar trend of the full-width at half-maximum of the intersubband absorption in Figure c is reduced and relaxation slows to a rate limited by phonon emission .…”
Section: Results and Discussionsupporting
confidence: 85%
“…The heterostructure, created by the adjustable bandgap of AlGaAs, enforces quantum confinement, limiting electron and hole movement in the vertical direction but allowing lateral motion. This results in discrete energy levels, so-called subbands, in the quantum well [36]. A distinctive feature of the on-chip THz circular-polarization detector is the composite structure of the chiral antenna and the III-V semiconductor layers (Figure 1a).…”
Section: Device Structurementioning
confidence: 99%