2016
DOI: 10.1080/14786435.2016.1210263
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Temperature-dependent model for hole transport mechanism in a poly(1.8-diaminocarbazole)/Si structure

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Cited by 3 publications
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“…The rectification ratio varies in the range of 5-11. This behavior which was also observed for some organic/inorganic heterojunctions was assigned to the recombination losses caused by surface trap states [15]. The leakage current is observed to be affected by the distribution of defects and the quality of the interfaces.…”
Section: Resultssupporting
confidence: 61%
“…The rectification ratio varies in the range of 5-11. This behavior which was also observed for some organic/inorganic heterojunctions was assigned to the recombination losses caused by surface trap states [15]. The leakage current is observed to be affected by the distribution of defects and the quality of the interfaces.…”
Section: Resultssupporting
confidence: 61%