Temperature-Dependent Modeling and Crosstalk Analysis 
in Mixed Carbon Nanotube Bundle Interconnects

Kumar, Mayank; Garg, Harsh; Kaushik, Brajesh Kumar

doi:10.1007/s11664-017-5538-1

Cited by 34 publications

(40 citation statements)

References 32 publications

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“…It is seen that with the rise in temperature from 300 to 500 K, the noise peaks of crosstalk‐induced transient responses falls, whereas time‐duration of transient responses increase for all the different types of MLGNR interconnects. It is justified by the combined effect of interconnect's resistance, inductance, and capacitance . It is also observed that over a temperature range from 300 to 500 K, undoped MLGNR has wider crosstalk‐induced noise pulse compared with that of both the doped MLGNRs.…”

Section: Temperature‐dependent Crosstalk Analysismentioning

confidence: 92%

“…From Figure , it is seen that the time duration of fall‐glitch increases with the rise in temperature from 300 to 500 K for both the doped and undoped MLGNRs. It is reported that a gradual increase in time duration is primarily accompanied by the temperature‐dependent line resistance than capacitance and inductance . As the small value of resistance is exhibited by both the doped‐MLGNRs at any specific temperature range 300–500 K, therefore, the doped‐MLGNRs have a lower duration of fall‐glitch in comparison to that of undoped MLGNR interconnects.…”

Section: Temperature‐dependent Crosstalk Analysismentioning

confidence: 99%

“…First, the known experiments have verified that TC‐MLGNRs can be fabricated easily than SC‐MLGNRs . Second, the detailed analysis on interconnects beyond 45 nm technology node reveals that the temperature of the metals increases due to the cumulative effect of increased resistivity, current density, and number of global metal layers . Hence, for designing next‐generation interconnects, the thermal issue is a predetermined design criterion.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Analysis of Temperature‐Dependent Functional and Dynamic Crosstalk Noise in Adjacent Interconnects of Doped Multilayer Graphene Nanoribbon with Armchair and Zigzag Edges

Kaur

Kumar

Khanna

2019

Physica Status Solidi (a)

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Multilayer graphene nanoribbon (MLGNR) is a potential candidate in nanoscale very large scale integration (VLSI) interconnects. A detailed analysis emphasizing the impact of GNR's edge shape in an armchair (ac) and zigzag (zz) structures on crosstalk performance considering undoped and doped (intercalated with AsF 5 and FeCl 3 ) MLGNR interconnects is presented. A capacitively-coupled driver-interconnect-load (DIL) line configuration is used to analyze both the functional and dynamic crosstalk at 14 nm technology node for global interconnects. A temperature-dependent equivalent single conductor (TD-ESC) model is considered. It is observed that over a temperature range from 300 to 500 K, crosstalk-induced low noise peaks in doped MLGNRs are obtained with zz-edges as compared with undoped MLGNR, whereas, the time duration of crosstalk-induced noise is small for doped MLGNRs with ac-edges. Similar findings are obtained in terms of propagation delay and crosstalk-induced delay for single and coupled interconnects, respectively, that is, the delays obtained in both kinds are small for doped MLGNR with ac-edges. It is also observed that AsF 5 -doped MLGNR outperforms FeCl 3 -doped MLGNR in terms of crosstalk-induced noise and delay. The results of MLGNR are also compared with the mixed carbon-nanotube bundle (MCB).

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Section: Temperature‐dependent Crosstalk Analysismentioning

confidence: 92%

Section: Temperature‐dependent Crosstalk Analysismentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Analysis of Temperature‐Dependent Functional and Dynamic Crosstalk Noise in Adjacent Interconnects of Doped Multilayer Graphene Nanoribbon with Armchair and Zigzag Edges

Kaur

Kumar

Khanna

2019

Physica Status Solidi (a)

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“…As the feature size of very large-scale integrated (VLSI) circuits is scaled down to the nanometer order, various performance degradation and stability problems on the conventional Cu interconnects have emerged in recent years [1][2][3]. Graphene, as a promising candidate for replacing the common copper, has attracted the intensive interest of many researchers in terms of its excellent electrical, mechanical and thermal properties [4,5]. Compared with the copper material, high quality graphene has a long mean free path on the order of several micrometers, which can result in a lower resistivity and achieving the ballistic transport at shorter interconnects.…”

Section: Introductionmentioning

confidence: 99%

The Ultra-Low-k Dielectric Materials for Performance Improvement in Coupled Multilayer Graphene Nanoribbon Interconnects

Zhang

Tang

2019

Electronics

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The ultra-low-k dielectric material replacing the conventional SiO2 dielectric medium in coupled multilayer graphene nanoribbon (MLGNR) interconnects is presented. An equivalent distributed transmission line model of coupled MLGNR interconnects is established to derive the analytical expressions of crosstalk delay, transfer gain, and noise output for 7.5 nm technology node at global level, which take the in-phase and out-of-phase crosstalk into account. The results show that by replacing the SiO2 dielectric mediums with the nanoglass, the maximum reduction of delay time and peak noise voltage are 25.202 ns and 0.102 V for an interconnect length of 3000 µm, respectively. It is demonstrated that the ultra-low-k dielectric materials can significantly reduce delay time and crosstalk noise and increase transfer gain compared with the conventional SiO2 dielectric medium. Moreover, it is found that the coupled MLGNR interconnect under out-of-phase mode has a larger crosstalk delay and a lesser transfer gain than that under in-phase mode, and the peak noise voltage increases with the increase of the coupled MLGNR interconnect length. The results presented in this paper would be useful to aid in the enhancement of performance of on-chip interconnects and provide guidelines for signal characteristic analysis of MLGNR interconnects.

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“…current capacity problems [1]- [3]. Due to the outstanding electrical, mechanical and thermal properties, graphene material has captured considerable attention from the researchers that is regarded as a potential alternative to the traditional Cu for next-generation on-chip interconnect applications [4], [5]. High quality graphene has a long mean free path (MFP) on the order of several micrometers far over Cu material, which leads to a lower resistivity and achieves the ballistic transport at the shorter interconnects [6]- [8].…”

mentioning

confidence: 99%

Collaborative Applying the Ultra-low-k Dielectric and the High-k Dielectric Materials for Performance Enhancement in Coupled Multilayer Graphene Nanoribbon Interconnects

Zhang

2020

IEEE J. Electron Devices Soc.

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Based on transmission line modeling, a new technology of collaborative applying the ultralow-k dielectric and the high-k dielectric materials in coupled multilayer graphene nanoribbon (MLGNR) interconnects (i.e., case 4) to reduce propagation delay and to expand 3-dB bandwidth of the conventional pristine (undoped) MLGNR interconnects is proposed in this paper. By using the decoupling technique and ABCD parameter matrix approach, the transfer function of the equivalent circuit model for coupled MLGNR interconnects is derived to obtain step response, propagation delay, transfer gain and 3-dB bandwidth under in-phase and out-of-phase crosstalk modes at global level of 7.5 nm technology node, which is based on the defined four cases. The results show that the maximum reduction of propagation delay between the proposed new technology (case 4) and the conventional MLGNR interconnects (case 1) can reach 15.911 ns at out-of-phase crosstalk mode for an interconnect length of 4000 µm. The corresponding 3-dB bandwidth for them can be expanded over 2.978 times in the same length as the former. It is demonstrated that the proposed case 4 can obviously reduce the propagation delay and enhance the transfer gain and 3-dB bandwidth compared with the conventional case 1. Moreover, it is found that the coupled MLGNR interconnect under in-phase mode outperform that under out-of-phase mode in terms of propagation delay, transfer gain and 3-dB bandwidth at the same condition. In addition, it is manifested that the victim line of two-line coupled MLGNR interconnects have lesser propagation delay, higher transfer gain and larger 3-dB bandwidth, as compared to three-line coupled MLGNR interconnects at the same case. The proposed new technology in this paper would be beneficial to improve the performance of MLGNR interconnects and to provide the guidelines for the design of next generation on-chip MLGNR interconnect system. INDEX TERMS MLGNR interconnects, step response, propagation delay, transfer gain, 3-dB bandwidth, ultra-low-k dielectric, high-k dielectric. I. INTRODUCTION With the continuous advancement of semiconductor manufacturing technology in very large-scale integrated (VLSI) circuits, a series of performance degradation on the conventional copper (Cu) based interconnects have been reported, such as the larger resistivity, electro-migration and smaller

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Temperature-Dependent Modeling and Crosstalk Analysis in Mixed Carbon Nanotube Bundle Interconnects

Cited by 34 publications

References 32 publications

Analysis of Temperature‐Dependent Functional and Dynamic Crosstalk Noise in Adjacent Interconnects of Doped Multilayer Graphene Nanoribbon with Armchair and Zigzag Edges

Analysis of Temperature‐Dependent Functional and Dynamic Crosstalk Noise in Adjacent Interconnects of Doped Multilayer Graphene Nanoribbon with Armchair and Zigzag Edges

The Ultra-Low-k Dielectric Materials for Performance Improvement in Coupled Multilayer Graphene Nanoribbon Interconnects

Collaborative Applying the Ultra-low-k Dielectric and the High-k Dielectric Materials for Performance Enhancement in Coupled Multilayer Graphene Nanoribbon Interconnects

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