Temperature-dependent optical properties of Pb1−xMnxSe films epitaxially grown on Zn0.04Cd0.96Te substrates

Sun, Yun; Zhang, B.; Dai, Ning; Si, Jianxiao; Wu, Honghui; Zhang, R.J.; Chen, L.Y.

doi:10.1016/j.jallcom.2008.01.008

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Theoretical analysis of optical gain in PbSe/Pb_1–xSr_xSe quantum well lasers

Sun

Zhang

et al. 2009

Physica Status Solidi (a)

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In this article, theoretical calculation of optical gain has been performed for IV–VI lead salt PbSe/Pb1–xSrxSe quantum well lasers emitting at about 4–6 µm by using an analytic gain expression. The reduced density of states and interband transition matrix elements used in the calculation were derived in the framework of the k·p model. Peak optical gain as a function of carrier concentration and radiative current density was calculated. The material parameters and laser structures that affect device performance were analyzed in details.

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