Temperature-dependent optical properties of single quantum well with high nitrogen content for application grown by molecular beam epitaxy

Lai, Fang I.; Kuo, Shou‐Yi; Wang, J. S.; Hsiao, R. S.; Kuo, Hao‐Chung; Chi, J.Y.; Wang, S. C.; Wang, H. S.; Liang, Chi‐Te; Chen, Y. F.

doi:10.1016/j.jcrysgro.2006.02.028

Cited by 12 publications

(4 citation statements)

References 41 publications

(45 reference statements)

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“…The features in the temperature dependences of the PL intensity, maximum position, and half-width obtained in this work can be explained by the presence of localized (defect) states in the studied specimens [6,7], which are induced by fluctuations of QW dimensions, and/or by a variation of the QW composition. At low temperatures, photo-induced charge carriers (excitons) are captured by the localized potential.…”

Section: Discussion Of Experimental Resultssupporting

confidence: 54%

“…In x Ga 1−x As-GaAs heterostructures are widely used in modern optoelectronics as structures that are capable of being adapted for the convenient reception, transmission, and transformation of radiation in various spectral ranges. Special attention is attracted to heterostructures with quantized layers owing to their enhanced sensitivity and a possibility to additionally vary the optical spectrum [1][2][3][4][5][6][7]. The energy of an emitted quantum in such heterostructures is governed by the distance between the sizequantization levels of electrons and holes, E e1-hh1 , which, in turn, depend on the quantum well (QW) width d and the composition of a substitutional solid solution (x is the indium content).…”

Section: Introductionmentioning

confidence: 99%

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Academician of the NAS of Ukraine Vadym Evgenovych Lashkaryov: the Outstanding Physicist of the 20-th Century, the Discoverer of a p-n-Junction (to the 55-th Anniversary of the Foundation of the Institute of Semiconductor Physics of the NAS of Ukraine)

Литовченко

2016

Ukr. J. Phys.

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Characteristics of GaAs/InxGa1−xAs/GaAs heterostructures with a single quantum well, which were obtained at various growth parameters, are evaluated according to the results of measurements of low-temperature photoluminescence (PL) spectra and their corresponding theoretical analysis. The experimentally obtained temperature dependences of the energy position of the PL band maximum, hνmax, band half-width, W0, and intensity, I, are examined. The values of energy of local phonons, E ph , exciton binding energy, Eex, and the Huang-Rhys factor, N , are determined. A comparison between the values obtained for those quantities and the growth parameters of considered specimens allowed us to assert that the highest-quality specimens are those that are characterized by low N values and one-mode phonon spectra. K e y w o r d s: photoluminescence, quantum well, exciton, phonon

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Section: Discussion Of Experimental Resultssupporting

confidence: 54%

Section: Introductionmentioning

confidence: 99%

Academician of the NAS of Ukraine Vadym Evgenovych Lashkaryov: the Outstanding Physicist of the 20-th Century, the Discoverer of a p-n-Junction (to the 55-th Anniversary of the Foundation of the Institute of Semiconductor Physics of the NAS of Ukraine)

Литовченко

2016

Ukr. J. Phys.

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“…The temperature dependence of the InAsN bandgap is much less than that of InAs (lower value of α) and the values for InAsSbN are slightly higher than InAsN. The carrier localization energy at a given temperature is given by [17]…”

Section: Resultsmentioning

confidence: 99%

Midinfrared InAsSbN/InAs Multiquantum Well Light-Emitting Diodes

Carrington

Mare

Cheetham

et al. 2011

Advances in OptoElectronics

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Electroluminescence is reported from dilute nitride InAsSbN/InAs multiquantum well light-emitting diodes grown using nitrogen plasma source molecular beam epitaxy. The diodes exhibited bright emission in the midinfrared peaking at 3.56 μm at room temperature. Emission occurred from a type I transition from electrons in the InAsSbN to confined heavy and light hole states in the QW. Analysis of the temperature- and current-dependent electroluminescence shows that thermally activated hole leakage and Auger recombination are the performance limiting factors in these devices.

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“…2 Pushing the emission wavelength of GaInNAs/ GaAs systems to 1.6 m has gained much interest in the past few years. [3][4][5][6][7][8][9][10][11][12] However, when incorporating more than ϳ2% of nitrogen and ϳ25% of indium that are required for reaching longer wavelengths, the structural quality of the resulting GaInNAs/GaAs QWs deteriorates due to the large miscibility gap and the phase separation tendency. Recently, in order to avoid the phase separation in GaInNAs, a lower growth temperature than that conventionally employed for the growth of GaInNAs/GaAs QWs has been used, resulting in GaInNAs QWs with a perfect two-dimensional ͑2D͒ morphology.…”

Section: Introductionmentioning

confidence: 99%

Temperature dependence of the optical transitions in Ga0.64In0.36N0.046As0.954 multiquantum wells of various widths studied by photoreflectance

Kudrawiec¹,

Poloczek²,

Misiewicz³

et al. 2009

Journal of Applied Physics

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The temperature dependencies of optical transitions in as-grown Ga 0.64 In 0.36 N 0.046 As 0.954 multiple quantum wells ͑QWs͒ of various widths ͑ranging from 3.9 to 8.1 nm͒ grown at the low temperature of 375°C were studied by photoreflectance ͑PR͒. In addition to the 11H transition, which is the fundamental transition for this QW, the optical transitions between excited states ͑22H and 33H transitions, where the notation klH denotes the transition between the kth heavy-hole valence subband and the lth conduction subband͒ were clearly observed in the PR spectra. The temperature dependencies of the QW transition energies were analyzed using Varshni and Bose-Einstein expressions. It was found that with increasing temperature, both the ground-state and the excited-state transitions shift to the red without showing S-shape-type behaviors, which are typical for photoluminescence from this system. This shift does not depend on the QW width and amounts to ϳ80 meV for the 11H transition and ϳ100 meV for the 22H and 33H transitions in the temperature range of 10-300 K. These shifts are comparable to those of N-free QWs.

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Temperature-dependent optical properties of single quantum well with high nitrogen content for application grown by molecular beam epitaxy

Cited by 12 publications

References 41 publications

Academician of the NAS of Ukraine Vadym Evgenovych Lashkaryov: the Outstanding Physicist of the 20-th Century, the Discoverer of a p-n-Junction (to the 55-th Anniversary of the Foundation of the Institute of Semiconductor Physics of the NAS of Ukraine)

Academician of the NAS of Ukraine Vadym Evgenovych Lashkaryov: the Outstanding Physicist of the 20-th Century, the Discoverer of a p-n-Junction (to the 55-th Anniversary of the Foundation of the Institute of Semiconductor Physics of the NAS of Ukraine)

Midinfrared InAsSbN/InAs Multiquantum Well Light-Emitting Diodes

Temperature dependence of the optical transitions in Ga0.64In0.36N0.046As0.954 multiquantum wells of various widths studied by photoreflectance

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