Temperature-dependent oxygen annealing effect on the properties of Ga2O3 thin film deposited by atomic layer deposition

Gu, Lin; Ma, Hong-Ping; Shen, Yi; Zhang, Jie; Chen, Wenjie; Yang, Ruo-Yun; Wu, Fanzhengshu; Yang, Lei; Zeng, Yu-Xuan; Wang, Xi-Rui; Zhu, Jingtao; Zhang, Qing‐Chun

doi:10.1016/j.jallcom.2022.166727

Cited by 18 publications

(3 citation statements)

References 46 publications

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“…Thin film deposited with mist-generation intensity of 10% showed the comparatively smoother surface than thin films deposited with higher mist intensity. Reported RMS roughness range of gallium oxide thin film are 0.16-1.830 nm for ALD, [28][29][30] 1-6.3 nm for pulse laser deposition, [31,32] 0.38-3.91 nm for MOCVD, [33][34][35] and 0.4-3 nm for sputtering, [36,37] which are similar to RMS surface roughness obtained in this work. Hence, this proves that it is possible to achieve superior and ultrasmooth thin films using this low-cost and simple deposition method.…”

Section: Resultssupporting

confidence: 81%

Investigation on the Mist Intensity to Deposit Gallium Oxide Thin Films by Mist Chemical Vapor Deposition

Ganguly,

Nama Manjunatha,

Paul

2023

Physica Rapid Research Ltrs

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In this study, a novel, simple, and robust mist chemical vapor deposition is demonstrated, compatible with existing industrial practices to deposit gallium oxide thin films and influence of mist intensity on the properties of gallium oxide. The intensity of the mist generation is optimized to obtain smooth and uniform thin films. The thin film deposited in this work is mixed phase polycrystalline gallium oxide. Ultraviolet–visible–near‐infrared spectroscopy and photo response of thin film unveil that gallium oxide thin film is responsive to ultraviolet wavelengths including deep ultraviolet‐C and ultraviolet‐B bands and the mist‐generation intensity has negligible influence on the bandgap of the thin film. Thickness of thin film can be altered by varying the mist intensity. It is observed that there is no appreciable impact on refractive index of varying mist intensity. Morphological studies prove the formation of ultrasmooth thin film with root mean square value of 0.628 nm; which is closer and/or better than conventional semiconductor thin‐film deposition processes used for depositing Ga2O3.

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Section: Resultssupporting

confidence: 81%

Investigation on the Mist Intensity to Deposit Gallium Oxide Thin Films by Mist Chemical Vapor Deposition

Ganguly,

Nama Manjunatha,

Paul

2023

Physica Rapid Research Ltrs

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“…The energy difference (E VF ) between the valence band maximum (VBM, E V ) and Fermi level (E F ), as shown in Formula E VF = E V -E F , is determined by the linear extrapolation from the leading edge of the valence band spectrum to the baseline. [33][34][35] The energy gap between the Fermi level and the valence band maximum for the 0 mol%, 0.05 mol% and 1.5 mol% Ta-doped Ga 2 O 3 films was calculated to be 3.15, 3.55, and 3.16 eV, respectively. It can be inferred that the Fermi level of the Ga 2 O 3 films would move toward the conduction band minimum (CBM) after the incorporation of Ta ions.…”

Section: Resultsmentioning

confidence: 99%

Epitaxial Tantalum‐Doped β‐Ga₂O₃ Thin Films Grown on Mgo (001) Substrate by Pulsed Laser Deposition

Lin,

Liu,

Wang

et al. 2024

Physica Rapid Research Ltrs

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Epitaxial thin films of tantalum‐doped β‐Ga2O3 (Ta‐Ga2O3) were grown on MgO (001) substrates to study the effect of Ta doping on the electrical properties of β‐Ga2O3 films. X‐ray diffraction measurements show that the films with different Ta doping concentrations are (00l)‐oriented single‐crystalline β‐Ga2O3 without impurity phases. The incorporation of the Ta element modifies the electrical properties of Ta‐Ga2O3 films significantly. At a very low doping ratio of 0.05 mol%, the Ta‐Ga2O3 film showed a minimum resistivity of 2.32 Ω·cm and a carrier concentration of 2.48×1017 cm‐3. The corresponding activation energy of Ta element in the film was 16.8 meV, suggesting that the Ta element is a promising shallow donor dopant. The XPS analysis confirms that the Fermi level of the Ga2O3 films shifts towards the conduction band minimum after the introduction of Ta ions. These results indicate that the transition metal element Ta could be an effective n‐type dopant for modulating the carrier transport behavior of β‐Ga2O3 films.This article is protected by copyright. All rights reserved.

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“…Recrystallization through thermal annealing helps reduce oxygen-related charge traps and generally improves the quality of Ga 2 O 3 . As Ga and O atoms migrate under high-temperature annealing, the crystallinity of β-Ga 2 O 3 is enhanced [35,36]. The increase in the annealing temperature also promotes the linking of β-Ga 2 O 3 which helps for fewer defects and later expected to result in an enhanced performance from forming an interconnected network (β-Ga 2 O 3 networks) [21,37] in the sample as described in figures S2(a)-(d).…”

Section: Structural and Optical Characterizations Of The β-Ga 2 O 3 F...mentioning

confidence: 99%

Facile synthesis of β-Ga₂O₃ based high-performance electronic devices via direct oxidation of solution-processed transition metal dichalcogenides

Feria,

Huang,

Yeh

et al. 2024

Nanotechnology

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Gallium oxide (Ga2O3) is a promising wide bandgap semiconductor that is viewed as a contender for the next generation of high-power electronics due to its high theoretical breakdown electric field and large Baliga's figure of merit. Here, we report a facile route of synthesizing β-Ga2O3 via direct oxidation conversion using solution-processed two-dimensional (2D) GaS semiconducting nanomaterial. Higher order of crystallinity in X-ray diffraction (XRD) patterns and full surface coverage formation in scanning electron microscopy (SEM) images after annealing were achieved. A direct and wide bandgap of 5 eV was calculated, and the synthesized β-Ga2O3 was fabricated as thin film transistors (TFT). The β-Ga2O3 TFT fabricated exhibits remarkable electron mobility (1.28 cm2/Vs) and a good current ratio (Ion/Ioff) of 2.06×105. To further boost the electrical performance and solve the structural imperfections resulting from the exfoliation process of the 2D nanoflakes, we also introduced and doped graphene in β-Ga2O3 TFT devices, increasing the electrical device mobility by ~8-fold and thereby promoting percolation pathways for the charge transport. We found that electron mobility and conductivity increase directly with the graphene doping concentration. From these results, it can be proved that the β-Ga2O3 networks have excellent carrier transport properties. The facile and convenient synthesis method successfully developed in this paper makes an outstanding contribution to applying 2D oxide materials in different and emerging optoelectronic applications.

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Temperature-dependent oxygen annealing effect on the properties of Ga2O3 thin film deposited by atomic layer deposition

Cited by 18 publications

References 46 publications

Investigation on the Mist Intensity to Deposit Gallium Oxide Thin Films by Mist Chemical Vapor Deposition

Investigation on the Mist Intensity to Deposit Gallium Oxide Thin Films by Mist Chemical Vapor Deposition

Epitaxial Tantalum‐Doped β‐Ga₂O₃ Thin Films Grown on Mgo (001) Substrate by Pulsed Laser Deposition

Facile synthesis of β-Ga₂O₃ based high-performance electronic devices via direct oxidation of solution-processed transition metal dichalcogenides

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Temperature-dependent oxygen annealing effect on the properties of Ga2O3 thin film deposited by atomic layer deposition

Cited by 18 publications

References 46 publications

Investigation on the Mist Intensity to Deposit Gallium Oxide Thin Films by Mist Chemical Vapor Deposition

Investigation on the Mist Intensity to Deposit Gallium Oxide Thin Films by Mist Chemical Vapor Deposition

Epitaxial Tantalum‐Doped β‐Ga2O3 Thin Films Grown on Mgo (001) Substrate by Pulsed Laser Deposition

Facile synthesis of β-Ga2O3 based high-performance electronic devices via direct oxidation of solution-processed transition metal dichalcogenides

Contact Info

Product

Resources

About

Epitaxial Tantalum‐Doped β‐Ga₂O₃ Thin Films Grown on Mgo (001) Substrate by Pulsed Laser Deposition

Facile synthesis of β-Ga₂O₃ based high-performance electronic devices via direct oxidation of solution-processed transition metal dichalcogenides