Temperature-dependent Photoluminescence Characteristics of Strained GaInP Quantum Well Structure

Tao, 林涛 Lin; Shao-huan, 宁少欢 Ning; Jing-jing, 李晶晶 Li; Tian-jie, 张天杰 Zhang; Yu-peng, 段玉鹏 Duan; Nan, 林楠 Lin; Xiaoyu, 马骁宇 Ma

doi:10.3788/gzxb20194801.0125001

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“…When the temperature is higher than 800 K, the value of relative diffusion coefficient D increases sharply. This figure also shows that high temperature annealing is a necessary process in quantum well intermixing technology [20] .…”

Section: Effect Of Temperature On Component Interdiffusionmentioning

confidence: 72%

Research on quantum well intermixing of 680 nm AlGaInP/GaInP semiconductor lasers induced by composited Si–Si₃N₄ dielectric layer

He¹,

Liu²,

Li³

et al. 2022

J. Semicond.

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The optical catastrophic damage that usually occurs at the cavity surface of semiconductor lasers has become the main bottleneck affecting the improvement of laser output power and long-term reliability. To improve the output power of 680 nm AlGaInP/GaInP quantum well red semiconductor lasers, Si–Si3N4 composited dielectric layers are used to induce its quantum wells to be intermixed at the cavity surface to make a non-absorption window. Si with a thickness of 100 nm and Si3N4 with a thickness of 100 nm were grown on the surface of the epitaxial wafer by magnetron sputtering and PECVD as diffusion source and driving source, respectively. Compared with traditional Si impurity induced quantum well intermixing, this paper realizes the blue shift of 54.8 nm in the nonabsorbent window region at a lower annealing temperature of 600 °C and annealing time of 10 min. Under this annealing condition, the wavelength of the gain luminescence region basically does not shift to short wavelength, and the surface morphology of the whole epitaxial wafer remains fine after annealing. The application of this process condition can reduce the difficulty of production and save cost, which provides an effective method for upcoming fabrication.

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Section: Effect Of Temperature On Component Interdiffusionmentioning

confidence: 72%

Research on quantum well intermixing of 680 nm AlGaInP/GaInP semiconductor lasers induced by composited Si–Si₃N₄ dielectric layer

He¹,

Liu²,

Li³

et al. 2022

J. Semicond.

View full text Add to dashboard Cite

show abstract

Temperature-dependent Photoluminescence Characteristics of Strained GaInP Quantum Well Structure

Cited by 1 publication

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Research on quantum well intermixing of 680 nm AlGaInP/GaInP semiconductor lasers induced by composited Si–Si₃N₄ dielectric layer

Research on quantum well intermixing of 680 nm AlGaInP/GaInP semiconductor lasers induced by composited Si–Si₃N₄ dielectric layer

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Temperature-dependent Photoluminescence Characteristics of Strained GaInP Quantum Well Structure

Cited by 1 publication

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Research on quantum well intermixing of 680 nm AlGaInP/GaInP semiconductor lasers induced by composited Si–Si3N4 dielectric layer

Research on quantum well intermixing of 680 nm AlGaInP/GaInP semiconductor lasers induced by composited Si–Si3N4 dielectric layer

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Research on quantum well intermixing of 680 nm AlGaInP/GaInP semiconductor lasers induced by composited Si–Si₃N₄ dielectric layer

Research on quantum well intermixing of 680 nm AlGaInP/GaInP semiconductor lasers induced by composited Si–Si₃N₄ dielectric layer