Temperature-dependent photoluminescence study of As-doped p-type (Zn0.93Mn0.07)O layer

Temperature-dependent photoluminescence of ZnO films codoped with tellurium and nitrogen

“…The Haynes factor (E A =E b A 0 X ) for n-type materials has been well defined, however, it is not established yet for p-type ZnO. 97 have adopted the empirical value of $ 0.1 to estimate the E A value from the E b A 0 X , 98 there are still other reported values of Haynes factor ranging from 0.07 to 0.25. 12,45 Using the above-derived E A values of the codoped samples (118 meV for sample C and 124 meV for sample B), the Haynes factor in the Te-N codoped ZnO films is determined to be $ 0.09.…”

Yellowish-White Emission from Sol-Gel Mediated Lithium and Aluminium Co-Doped Zinc Oxide Thin Films

“…The defect-related emissions locate in a wide range of the visible spectrum, several of emissions such as violet [1], green [2], yellow [3] [4], and orange-red [5] emissions have been investigated. Furthermore, great efforts have been made to modify and tailor the visible emissions by doping impurities; the dopants are seen to involve Al [6], As [7], V [8], Ga [9], In [10], Mg [11], Li [12], W [13], and Eu [14], etc.…”

The Evaluation of p-type doping in ZnO taking Co as dopant

“…But the attention is slackened up to the middle of 1990, because the epitaxial growth of ZnO is difficult and the p-type doping did not succeed. nand p-type conduction is necessary for electronic applications like diodes and bipolar transistors [1][2][3][4]. Since middle of 1990's there is an increasing interest because of the hope for an alternative material to GaN, which is the main material of commercially available light emitting and laser diodes in the blue and UV spectrum [1].The processing of GaN [5] and ZnO is not easy, their band-gaps are nearly equal, but ZnO has a significant higher exciton binding energy of 60 meV which facilitates many electrical and optical applications [5][6][7].…”