Temperature-Dependent RF Small-Signal and Noise Characteristics of SOI Dynamic Threshold Voltage MOSFETs

Abstract

In this paper, temperature-dependent RF small-signal and noise characteristics of silicon-on-insulator (SOI) dynamic threshold voltage (DT) MOSFETs are experimentally examined. In the low-voltage regime, both the cutoff and maximum oscillation frequencies ( and max ) tend to increase with temperature.In addition, the inherent body-related parasitics and the series resistance have much more impact on max than . Besides, we found that the noise stemmed from the body resistance ( ) would contribute to the output noise current, and degrade the minimum noise figure (NF min ). Our study may provide insights for RF circuit design using advanced SOI DT MOSFETs. Index Terms-Body resistance, dynamic threshold voltage (DT)MOSFETs, noise, RF, silicon-on-insulator (SOI), small signal, temperature dependence. where he is involved with RF-related technologies. His current research focuses on advanced mixed-mode and RF CMOS design including device modeling, noise characterization, power behavior, and reliability studies.