Temperature-dependent selective growth of carbon nanotubes in Si/SiO2 structures for field emitter array applications

Lim, Yu Dian; Hu, Liangxing; Avramchuck, Alexander Vasiliyvich; Грапов, Д. В.; Tay, Beng Kang; Aditya, Sheel; Miao, Jianmin; Лабунов, В. А.

doi:10.1016/j.materresbull.2017.07.022

Cited by 10 publications

(10 citation statements)

References 34 publications

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“…Figure 6 -6 illustrates the SEM images of both pre-deposited and floating catalystgrown CNT films. From these images, one can clearly observe that CNTs grown by both catalyst sources displayed high degree of vertical alignment, which is in agreement with prior studies that reported on CNT growth using pre-deposited [152] and floating [127] catalyst sources. In fact, the vertical alignment of the pre-deposited catalyst-grown CNTs could be attributed to the 'crowding effect' between the CNTs [144], as mentioned earlier.…”

Section: Resultssupporting

confidence: 90%

“…Based on Figure 5 -6(a), the secondary CNT film exhibited limited thickness of > 2 µm due to the non-vertical growth orientation, as discussed earlier [126]. Besides, the randomized growth orientation discovered among the CNTs could be attributed to the formation of inhomogeneous Ni particles at 700 °C, thus resulting in lower Van der Waals force between the CNTs [127].…”

Section: Resultsmentioning

confidence: 63%

“…For 2 µm diameter SiO2 pits, CNT bundles show similar Id/Ig ratio at inter-pit separation distance between 4 -10 µm as reported in ref. [127]. Therefore, it can be speculated that the period and diameter of the pits have minimal influence on the properties of CNT grown on the Si surface.…”

Section: Resultsmentioning

confidence: 99%

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Development of carbon nanotubes for vacuum electronics application

Lim¹

Self Cite

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First and foremost, I would like to express my deepest appreciation to my PhD supervisor, Professor Tay Beng Kang. His continuous support and guidance are highly appreciated. He has groomed and trained me, not only in the area of research, but also in working well with collaborators and other important professional aspects. I have learned a lot from him throughout this PhD study. On top of that, I would like to acknowledge the financial supports on my research project from the Economic Development Board (EDB) under the project S14-1126-NRF OSTIn-SRP; and COE Research Grant under the project M4081666. At the same time, I would also like to express my gratitude to Nanyang Technology University for the kind opportunity to receive this offer of PhD study with fully-funded scholarship. I would also like to express my appreciations to my co-supervisor, Associate Professor Sheel Aditya, for his endless guidance, especially on the areas of device simulation and manuscript writing. At the same time, I would also like to thank my TAC members, Associate Professor Miao Jianmin and Associate Professor Daniel Chua and their respective students in providing their expertise guidance and support on microfabrication and field emission measurement. My gratitude also goes to the project's external collaborator, Professor Vladimir Labunov from Belarusian State University of Informatics and Radioelectronics, for his support on the microfabrication and Carbon Nanotubes growth. Next, I would also like to thank Professor Yan Xingbin from Lanzhou Institute of Chemical Physics (Chinese Academy of Science), for his support on the synthesis and fabrication of high current density Carbon Nanotubes field emitter. iv I would also like to express my gratitude to my project members, Dr Xia Xin, Dr Wang Shaomeng, and Mr Zishan Ali; and my fellow colleagues for their kind support in various aspects in my PhD research. Last but not least, I would like to thank my family in Malaysia, who constantly provide moral supports whenever I face difficulties and bottlenecks in my research life. To my late father, thank you for everything that you have given to me. You are proud of me, I know it.

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Section: Resultssupporting

confidence: 90%

Section: Resultsmentioning

confidence: 63%

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Development of carbon nanotubes for vacuum electronics application

Lim¹

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“…Unique properties of carbon nanotubes (CNTs) [1][2][3][4][5] open wide possibilities for their application as functional elements of carbon micro-and nanoelectronics devices [6][7][8][9][10][11][12][13]. Thus, for integration of the CNT growing methods in the mass production technology, most of the interests are ordered arrays of single-walled CNT, and based on them, they are located at the place of use in accordance with the design of the developed device [14][15][16][17][18].…”

Section: Introductionmentioning

confidence: 99%

Vertically Aligned Carbon Nanotubes Production by PECVD

Il’in¹,

Il’ina²,

Rudyk³

et al. 2019

Perspective of Carbon Nanotubes

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This chapter presents the results of experimental studies of the PECVD technological mode parameters' influence on the formation of catalytic centers and carbon nanotubes' (CNTs') growth processes. This chapter also presents the ability to regulate the growth parameter for the controlled production of CNTs with the required geometric parameters, properties, and growth mechanisms. The results of experimental studies of the heating temperature and activation time effects on the catalytic center formation will be presented. This chapter also shows the effects of growth temperature, heating rate, and the activation time on the geometric and structural parameters of the carbon nanotubes. Experimental studies were carried out with the use of AFM, SEM, TEM, and EXAFS techniques. The results can be used in the development of technological processes for creating ultrafast energy-efficient electronic component base with carbon nanostructures, particularly nanoelectromechanical switches, flexoand piezoelectric generators, gas sensors, and high-performance emitters.

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“…There are so many techniques available for CNTs growth [8]. But CVD has a wide range of growth parameters to tune the CNTs structure and, therefore, CVD is the most preferred technique for CNTs growth.…”

Section: Introductionmentioning

confidence: 99%

Tunable growth of single-wall CNTs by monitoring temperature increasing rate

2018

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We report here new aspects of CNT growth by CVD system where temperature increasing rate plays a key role in controlling the diameter, structural quality, and yield of CNTs. Temperature increasing rates were used in the range 100-600 °C/h and growth morphology was constantly monitored at every step by HRTEM, FESEM and Raman spectroscopy. Morphology as well as structural quality of CNTs is sharply enhanced with the increase in temperature increasing rate, and it is found that the onset of SWNTs growth starts at 600 °C/h. In this work, we also proposed that the diameter of grown CNTs is independent from the size of catalyst particles used for initiation of CNTs growth unlike the conventional concept in the field of CNTs growth.

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Temperature-dependent selective growth of carbon nanotubes in Si/SiO2 structures for field emitter array applications

Cited by 10 publications

References 34 publications

Development of carbon nanotubes for vacuum electronics application

Development of carbon nanotubes for vacuum electronics application

Vertically Aligned Carbon Nanotubes Production by PECVD

Tunable growth of single-wall CNTs by monitoring temperature increasing rate

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