Temperature effect study on structural and morphological properties of In.08Ga.92As/GaAs structures grown by MOVPE

Habchi, M.M.; Rebey, A.; Jani, B. El

doi:10.1016/j.jcrysgro.2008.09.011

Cited by 8 publications

(3 citation statements)

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“…As a result, the morphological properties evolution of CsPbBr 3 NPs should be associated with the growth behaviors of CsPbBr 3 QDs and NPs. In addition to continuous growth, CsPbBr 3 QDs may redissolve to sustain the growth of the larger-sized CsPbBr 3 NPs via an Ostwald ripening process, depending on the local environment. , Besides, it showed previously that the growth temperature played important roles in the structural and morphological properties of the as-grown semiconductors, − and therefore, it would govern the optical properties of CsPbBr 3 NPs in the growth process. A better understanding of the optical property behaviors of colloidal NPs during the growth process will provide opportunities to achieve a controllable synthesis of CsPbBr 3 NPs with desired luminescence properties.…”

Section: Resultsmentioning

confidence: 99%

Optical Property Behaviors of CsPbBr₃ Colloidal Nanoparticles in a Ligand-Assisted Reprecipitation Process

Chen

Yuan

Wang

et al. 2020

Crystal Growth & Design

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Recently, all-inorganic cesium lead halide perovskite CsPbX3 (X = Cl, Br, and I) colloidal nanoparticles (NPs) have attracted tremendous attention owing to their potential applications in light-emitting devices. A better understanding of optical property behaviors of the colloidal NPs during the growth process is of vital importance toward the controllable synthesis of CsPbX3 with desired luminescence properties. In this work, the optical property behaviors of as-grown CsPbBr3 NPs in the ligand-assisted reprecipitation process have been investigated via in situ photoluminescence (PL) spectroscopy. It showed that the growth parameters including growth temperature and time play important roles in determining the optical properties of the CsPbBr3 NPs. Specifically, the as-grown CsPbBr3 NPs emitted high-energy photons with a broad full width at half-maximum (fwhm) within the early stage of growth, while prolonging the growth duration led to a narrowing of PL spectra and a redshift of photon emission. Meanwhile, such PL emission evolution behaviors can be further modulated by tuning the growth temperature. On this basis, the optimized growth parameters including growth temperature and time for the fabrication of CsPbBr3 NPs with various luminescence properties were finally proposed.

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Section: Resultsmentioning

confidence: 99%

Optical Property Behaviors of CsPbBr₃ Colloidal Nanoparticles in a Ligand-Assisted Reprecipitation Process

Chen

Yuan

Wang

et al. 2020

Crystal Growth & Design

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“…All layers investigated in this work are elaborated by metal organic vapour phase epitaxy (MOVPE) technique [1][2][3][4][5][6][7][8].…”

Section: Experimental Details and Theory Elementmentioning

confidence: 99%

High‐Resolution X‐Ray Diffraction of III–V Semiconductor Thin Films

Fitouri¹,

Habchi²,

Rebey³

2017

X-Ray Scattering

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In this chapter, we will address the structural characterization of III-V semiconductor thin films by means of HRXRD. We first give an overview on the basic experimental apparatus and theory element of this method. Subsequently, we treat several examples in order to determine the effect of doping, composition and strain on structural properties of crystal. Analysed layers were grown by metal organic vapour phase epitaxy (MOVPE). Films treated as examples are selected in order to bring the utility of characterization technique. Here, we investigate GaAs/GaAs(001), GaAs:C/GaAs(001), GaN/Si(1 11), GaN:Si/Al 2 O 3 (001), GaAsBi/GaAs(001) and InGaAs/GaAs(001) heterostructures by using different scans for studying numerous structural layers and substrate parameters. Different scan geometries, such as ω-scan, ω/2θ-scan and map cartography, are manipulated to determine tilt, deformation and dislocation density induced by mismatch between layer and substrate. This mismatch is originated from the difference between the chemical properties of two materials generated by doping or alloying. Such HRXRD measurements are explored through the angular spacing between peaks of the substrate and layer. The half of full width maximum (HFWM) of peak layer intensity is a crucial qualitative parameter giving information on defect density in the layer.

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“…Among these tools, LR (single wavelength) is commonly used to determine film thickness and optical constants during growth or thermal decomposition of several heterostructures. 14 In spite of its simplicity and efficiency in extracting real-time growth parameters, LR sometimes lacks precision. This becomes especially clear when controlling the quality of the active layer of structures such as InGaAs/GaAs, GaAs/Si, and GaN/Al 2 O 3 , 15,16 which need very particular growth processes.…”

Section: Manufacturingmentioning

confidence: 99%

In Situ Spectral Reflectance Investigation of InAs/GaAs Heterostructures Grown by MOVPE

Massoudi

Habchi

Rebey

et al. 2011

Journal of Elec Materi

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Metalorganic vapor-phase epitaxy of InAs/GaAs heterostructures was monitored in situ by spectral reflectance in the wavelength range from 600 nm to 1000 nm. Three-dimensional (3D) plots of reflectivity as a function of time and wavelength were used to determine the growth rate evolution. Theoretical simulation of reflectivity signals was carried out by combining a transfer matrix method and a multi-sublayer model. In spite of fixed growth parameters, there was temporal variation of the growth rate. By adjusting simulated reflectivity curves, optical constants of the InAs layer at 450°C were determined. The E 1 critical point energy was also found experimentally at this temperature. Good agreement with calculated values is obtained.

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Temperature effect study on structural and morphological properties of In.08Ga.92As/GaAs structures grown by MOVPE

Cited by 8 publications

References 35 publications

Optical Property Behaviors of CsPbBr₃ Colloidal Nanoparticles in a Ligand-Assisted Reprecipitation Process

Optical Property Behaviors of CsPbBr₃ Colloidal Nanoparticles in a Ligand-Assisted Reprecipitation Process

High‐Resolution X‐Ray Diffraction of III–V Semiconductor Thin Films

In Situ Spectral Reflectance Investigation of InAs/GaAs Heterostructures Grown by MOVPE

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Temperature effect study on structural and morphological properties of In.08Ga.92As/GaAs structures grown by MOVPE

Cited by 8 publications

References 35 publications

Optical Property Behaviors of CsPbBr3 Colloidal Nanoparticles in a Ligand-Assisted Reprecipitation Process

Optical Property Behaviors of CsPbBr3 Colloidal Nanoparticles in a Ligand-Assisted Reprecipitation Process

High‐Resolution X‐Ray Diffraction of III–V Semiconductor Thin Films

In Situ Spectral Reflectance Investigation of InAs/GaAs Heterostructures Grown by MOVPE

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Optical Property Behaviors of CsPbBr₃ Colloidal Nanoparticles in a Ligand-Assisted Reprecipitation Process

Optical Property Behaviors of CsPbBr₃ Colloidal Nanoparticles in a Ligand-Assisted Reprecipitation Process