Temperature effects of pad conditioning process on oxide CMP: Polishing pad, slurry characteristics, and surface reactions

Kim, Nam–Hoon; Seo, Yong-Jin; Lee, Woo-Sun

doi:10.1016/j.mee.2005.10.004

Cited by 53 publications

(28 citation statements)

References 20 publications

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“…By implementing such protocol, the pad thickness profile can be better maintained and the WIWNU can be improved [31,32]. Pad conditioning temperature is also an important aspect that could influence the pad surface properties and the CMP performance [33][34][35][36][37][38]. The removal rate of oxide film after high temperature conditioning is much higher than that at low temperature conditioning.…”

Section: Pad Conditioning and Its Effect On Cmp Performancementioning

confidence: 99%

“…The removal rate of oxide film after high temperature conditioning is much higher than that at low temperature conditioning. Higher temperature conditioning also makes it easier to remove the slurry residues from pores and grooves of polishing pads [33][34][35]. Diamond grid shape, size, and numbers, and their positions (alignment) on the conditioner head are also factors that influence the conditioning effects/efficiency.…”

Section: Pad Conditioning and Its Effect On Cmp Performancementioning

confidence: 99%

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Pads for IC CMP

Wang

Paul

Kobayashi

et al. 2007

Microelectronic Applications of Chemical Mechanical Planarization

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The chemical-mechanical polishing or planarization (CMP) process is a complex interplay between the wafer and the consumables involved. The consumables include slurry, pad, conditioner, and so on. During polishing, the pad carries the slurry and delivers it to the wafer surface. It also transmits the normal and shear forces from the polisher to the wafer. Therefore, polishing pad plays a critical role in the CMP process and influences the outcomes such as material removal rate (MRR), within-wafer nonuniformity (WIWNU), wafer-to-wafer nonuniformity (WTWNU), step height reduction efficiency (SHRE), and defect counts.As the CMP process is a combination of mechanical and chemical processes, the polishing pad has to endure repeated mechanical stress and constant chemical attacks. The applied downforce and polishing-induced friction force cause various levels of compression and abrasion. Slurry components such as oxidizers and acids can react with different components of the pads. Thus the polishing pad must have sufficient mechanical integrity and chemical resistance to survive the rigors of polishing. Polishing pads must balance the needs of hardness, modulus for planarity, and strength to resist wear and tear during polishing. Pads must also be able to survive the aggressive slurry chemistry used in CMP polishing without degrading, delaminating, blistering, or warping, since CMP slurries for the polishing of interlevel dielectric (ILD) oxide layers are usually highly alkaline with pH as high as 11, and CMP slurries for the polishing of metal films are highly acidic Microelectronic Applications of Chemical Mechanical Planarization, Edited by Yuzhuo Li

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Section: Pad Conditioning and Its Effect On Cmp Performancementioning

confidence: 99%

Section: Pad Conditioning and Its Effect On Cmp Performancementioning

confidence: 99%

Pads for IC CMP

Wang

Paul

Kobayashi

et al. 2007

Microelectronic Applications of Chemical Mechanical Planarization

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show abstract

“…Furthermore, high temperatures during polishing reduce mechanical interactions by softening the pad. Kim et al (2006) suggested that in general, pad softening reduces the polish rate and performance due to the reduction of mechanical pressure applied by pad asperities to the surface of the wafer. In other words, increasing polish temperature increases the chemical forces while reducing the mechanical forces, and thereby enables the separate evaluation of the role of chemical and mechanical forces during CMP (Fig.…”

Section: Introductionmentioning

confidence: 99%

Chemical mechanical polishing in the dry lubrication regime: Application to conductive polysilicon

Pirayesh

Cadien

2015

Journal of Materials Processing Technology

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“…Zhou and Davis (1999) discussed variations in the polishing pad during dressing and showed that a concave pad profile makes the wafer shape of the pad more convex. Kim et al (2006) investigated controlling the pad conditioning temperature to improve the CMP performance of silicon dioxide. They showed that the planarity of the oxide film can be improved by using a softened pad after the high-temperature padconditioning process.…”

Section: Introductionmentioning

confidence: 99%