Temperature evolution of photocurrent spectra in undoped and boron-doped homoepitaxial CVD diamond film

Study of defects in diamond Schottky barrier diode by photocurrent spectroscopy

“…By taking into account the boron acceptor level at 0.36 eV, one possibility of this difference is thermal activation of acceptor level, cause the other excitation path from defect level to valence band (or conduction band via acceptor level). 18) Moreover, if the photocurrent decrease observed at 2.1 eV was related to the acceptor level, the photocurrent signals related to the other two defect levels (1.3 and 2.5 eV) should exhibit similar feature, i.e. decrease as function of photon energy, which is not observed in the spectrums (see Fig.…”

“…11,12) In this work, photocurrent spectroscopy was used to study defects in p-type CVD diamond epitaxial layer. Photocurrent spectroscopy is a very sensitive method [13][14][15][16][17][18][19][20] for investigation of defects in diamond compared to others such as admittance spectroscopy. [21][22][23][24] Indeed, it is easier to cover wide-bandgap with optical emission than thermal emission.…”

Study of ion-implanted nitrogen related defects in diamond Schottky barrier diode by transient photocapacitance and photoluminescence spectroscopy

“…Because of the pretty wide bandgap of the diamond up to 5.5 eV 14) , it is difficult to detect the defects without photoexcitation 15,16) . TPC spectroscopy and photocurrent spectroscopy are good choices as the most sensitive methods for diamond semiconductor defect testing [16][17][18] . Although both measurements are sensitive to deep levels in diamond, one thing must be noted that the recombination may affect the result, since there are two signs of free carriers in photocurrent spectroscopy 19,20) .…”

“…13,14) TPC spectroscopy and photocurrent spectroscopy are good choices as the most sensitive methods for diamond semiconductor defect testing. [14][15][16] Although both measurements are sensitive to deep levels in diamond, one thing must be noted that the photocurrent signal is proportional to the total number of free carriers of the two signs; 17,18) while it is different in TPC spectroscopy. Electron and hole transitions give opposite sign signals in TPC spectroscopy, so it may readily observe the optical and thermal excitation processes.…”