Temperature field simulation and correlation to the structural quality of semi-insulating GaAs crystals grown by the vapour pressure controlled Czochralski method (VCz)

Frank, C.; Jacob, Κ. T.; Neubert, Michael; Rudolph, P.; Fainberg, J.; Müller, G.

doi:10.1016/s0022-0248(00)00208-6

Cited by 26 publications

(2 citation statements)

References 11 publications

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“…CrysVUn proved to be very powerful for simulations of crystal growth processes which were not influenced too strongly by convective flow like VGF of GaAs or Cz of GaAs in the complex vapor‐controlled configuration VCZ (compare the results achieved by ref. []). At that time there was a strong scientific competition between different approaches to simulate the Cz configurations for industrial Si growth adequately.…”

Section: Development Of Industrial Singe Crystal Melt Growth Technolomentioning

confidence: 99%

Erlangen—An Important Center of Crystal Growth and Epitaxy: Major Scientific Results and Technological Solutions of the Last Four Decades

Friеdrich

Müller

2019

Crystal Research and Technology

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This article describes the historic development of the Erlangen Crystal GrowthLaboratory CGL from its beginnings in 1974 at the chair of Materials of Electrical Engineering (Department of Material Science) of the University of Erlangen-Nuremberg until its current status as a large department "Materials" of the Erlangen Fraunhofer-Institute for Integrated Systems and Device Technology. Essential developments and scientific achievements in the various fields of crystal growth and epitaxy are presented from the early period until today.

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Section: Development Of Industrial Singe Crystal Melt Growth Technolomentioning

confidence: 99%

Erlangen—An Important Center of Crystal Growth and Epitaxy: Major Scientific Results and Technological Solutions of the Last Four Decades

Friеdrich

Müller

2019

Crystal Research and Technology

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“…for the vapor pressure controlled Czochralski growth of GaAs [19], for processing of silicon [20], or the growth of oxides [11,21]) or to optimize the integration of heat shields and after heaters.…”

Section: Introductionmentioning

confidence: 99%

Czochralski growth of doped germanium with an applied rotating magnetic field

Dold¹

2003

Cryst. Res. Technol.

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The influence of time-dependent buoyancy convection on the temperature field and the microsegregation during the Czochralski growth of doped germanium was investigated. For physical modelling, experiments with gallium melts have been carried out in the temperature range of 690 to 1000 °C. Growth experiments were performed in a 2 inch crucible. Temperature measurements in the melt revealed convective temperature fluctuations in the range of 1.5 K with a standard deviation of σ=0.3 K. The corresponding frequencies are f≤0.6 Hz. The facility was equipped with a rotating magnetic field (RMF) of B max =0.8 mT, adjustable in the range of 5 to 400 Hz. When the maximum field strength was applied, a uniform, azimuthal flow was induced and the germanium melt rotates with 60 rpm. The melt rotation generated by the RMF can completely replace crystal and/or crucible rotation. Growth under an applied RMF results in the lowest microsegregation, compared to the growth without magnetic field / without rotation or to the case when the crystal was rotated but no magnetic field was applied. Increasing the magnetic field strength continuously, the convective temperature fluctuations pass through an intermediated state, where their amplitude becomes even higher, before they are effectively reduced by the RMF. Dedicated to Professor K. W. Benz on the occasion of his 65th birthday.

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A Study on Carbon Incorporation in Semi-Insulating GaAs Crystals Grown by the Vapor Pressure Controlled Czochralski Technique (VCz) Part I: Experiments and Results

Jacob

Frank

Neubert

et al. 2000

Cryst. Res. Technol.

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Temperature field simulation and correlation to the structural quality of semi-insulating GaAs crystals grown by the vapour pressure controlled Czochralski method (VCz)

Cited by 26 publications

References 11 publications

Erlangen—An Important Center of Crystal Growth and Epitaxy: Major Scientific Results and Technological Solutions of the Last Four Decades

Erlangen—An Important Center of Crystal Growth and Epitaxy: Major Scientific Results and Technological Solutions of the Last Four Decades

Czochralski growth of doped germanium with an applied rotating magnetic field

A Study on Carbon Incorporation in Semi-Insulating GaAs Crystals Grown by the Vapor Pressure Controlled Czochralski Technique (VCz) Part I: Experiments and Results

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