Temperature Field Simulation and optimization for Horizontal 6-inch 4H-SiC Epitaxial CVD Reactor by Induction Heating

Abstract

Silicon carbide (SiC) epitaxial process is a key step in the fabrication of power devices, and the temperature field inside the reactor chamber plays an essential role in this process. In this paper, the temperature field in the horizontal chemical-vapor-deposition reactor chamber used for growing homo-epitaxial 4H-SiC material is studied using the finite-element method. A threedimensional time-dependency model is built for the accuracy of simulation, and the effects of 11 relative coil