The homoepitaxial growth of 4H-SiC films was conducted on 4H-SiC 150 mm 4° off-axis substrates by using a home-made hot-wall chemical vapor deposition (CVD) reactor. Special attention was paid to the influence of the growth temperature on the surface morphology, growth rate, doping efficiency, and structural uniformity of the films. Among the above factors, growth temperature and flow ratio were shown to be the essential parameters to produce high-quality homoepitaxial layers. Furthermore, a two-side flow tunnel was introduced to control the growth temperature nonuniformity in the reactor. The influence of flow ratio on the epitaxial layer uniformity was also studied. It was found that the surface roughness increased with the increasing temperature, achieving its minimum value of 0.183 nm at 1610 °C. Besides that, the film growth rate decreased with the increase in growth temperature, whereas the degrees of thickness non-uniformity, N2 doping non-uniformity, and doping efficiency increased. Meanwhile, both the thickness and doping uniformity can be improved by adjusting H2 and N2 flow ratios, respectively. In particular, the use of the H2 ratio of 1.63 and N2 ratio of 0.92 enabled one to increase the degree of uniformity of thickness and doping by 0.79% (standard deviation/mean value) and 3.56% (standard deviation/mean value), respectively, at the growth temperature of 1630 °C.

Silicon carbide (SiC) epitaxial process is a key step in the fabrication of power devices, and the temperature field inside the reactor chamber plays an essential role in this process. In this paper, the temperature field in the horizontal chemical-vapor-deposition reactor chamber used for growing homo-epitaxial 4H-SiC material is studied using the finite-element method. A threedimensional time-dependency model is built for the accuracy of simulation, and the effects of 11 relative coil

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