Temperature-induced sign change of the magnetic interlayer coupling in Ni/Ni25Mn75/Ni trilayers on Cu3Au(001)

Shokr, Yasser A.; Erkovan, Mustafa; Sandig, Oliver; Kuch, W.

doi:10.1063/1.4919597

Cited by 6 publications

(7 citation statements)

References 32 publications

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“…On the other hand, our design may be more suitable for sparse and habitual neuron circuits 70 , 71 by virtue of the nature of heat dissipation, which is also one of the focuses of our subsequent research, i.e., constructing neuron circuits with specific tasks. From the perspectives of material systems (e.g., FM/AFM/FM 72 , FM/FM(PM)/FM 73 ), the Joule heating modulates not only the strength but also the sign of RKKY coupling, which is applicable for the CMOS devices integration. Furthermore, the voltage and strain bear extra engineering knob to modulate RKKY interaction 27 , 74 , 75 , enabling more reconfigurable neurons diversity.…”

Section: Discussionmentioning

confidence: 99%

Spintronic leaky-integrate-fire spiking neurons with self-reset and winner-takes-all for neuromorphic computing

et al. 2023

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Neuromorphic computing using nonvolatile memories is expected to tackle the memory wall and energy efficiency bottleneck in the von Neumann system and to mitigate the stagnation of Moore’s law. However, an ideal artificial neuron possessing bio-inspired behaviors as exemplified by the requisite leaky-integrate-fire and self-reset (LIFT) functionalities within a single device is still lacking. Here, we report a new type of spiking neuron with LIFT characteristics by manipulating the magnetic domain wall motion in a synthetic antiferromagnetic (SAF) heterostructure. We validate the mechanism of Joule heating modulated competition between the Ruderman–Kittel–Kasuya–Yosida interaction and the built-in field in the SAF device, enabling it with a firing rate up to 17 MHz and energy consumption of 486 fJ/spike. A spiking neuron circuit is implemented with a latency of 170 ps and power consumption of 90.99 μW. Moreover, the winner-takes-all is executed with a current ratio >104 between activated and inhibited neurons. We further establish a two-layer spiking neural network based on the developed spintronic LIFT neurons. The architecture achieves 88.5% accuracy on the handwritten digit database benchmark. Our studies corroborate the circuit compatibility of the spintronic neurons and their great potential in the field of intelligent devices and neuromorphic computing.

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Section: Discussionmentioning

confidence: 99%

Spintronic leaky-integrate-fire spiking neurons with self-reset and winner-takes-all for neuromorphic computing

et al. 2023

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“…The growth of these systems has already been studied and is well‐controlled. [ 16,17,21,22,36–38 ] They exhibit EB above a certain AFM layer thickness. Co is used as FM layer, which grows epitaxially on

{Cu}_{3} Au

(001) as well as on top of the NiMn or Mn AFM layers, [ 16,17,21,22,38 ] and exhibits an in‐plane easy axis of magnetization.…”

Section: Introductionmentioning

confidence: 99%

Bulk and Interfacial Effects in the Co/NixMn100−x Exchange‐Bias System due to Creation of Defects by Ar+ Sputtering

Shinwari

Gelen

Shokr

et al. 2021

Physica Rapid Research Ltrs

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Research on ultrathin magnetic layers and layered materials has reached an enormous impact, both scientifically and economically, with respect to applications in magnetic data storage technology, as sensors, or for future electronics utilizing the spin rather than the charge of electrons, the so-called "spintronics". [1][2][3][4] The physical size of a bit of information in magnetic data storage is already in the nanometer regime and is still shrinking, following the everincreasing demand for higher recording densities. Very soon the dimension of the recording bit will reach the sub-10 nm range. This poses formidable challenges to the read sensors. One ingredient of hard disk read sensors are magnetic layered systems in which ferromagnetic (FM) and antiferromagnetic (AFM) materials are in contact. [5] They show the exchange bias (EB) effect, which has received increased attention during the past decades. [6][7][8][9][10][11] It manifests itself in a shift of the magnetic hysteresis loop of the FM layer along the field axis. [12] Although reported first in 1956, [13] it was only in the mid-1990s that it shifted into the center of interest, triggered by applications of FM/AFM heterostructures for tailoring the magnetic properties of magnetoresistive devices. The past years have seen significant advances toward an explanation of the effect, however, a fundamental microscopic picture of the origin of the unidirectional magnetic anisotropy present in the EB effect is still missing.The occurrence of EB requires two basic ingredients: a magnetic interaction between FM and AFM spins at the interface, and a pinning of magnetic moments against the reversal of the FM-layer magnetization by the external magnetic field inside the AFM layer. As in AFM materials the direction of the spins varies on the length scale of single atomic distances, a thorough characterization of the atomic structure of the films and their interface is mandatory for fundamental investigations into the effect. In the commonly used polycrystalline systems prepared by sputtering techniques this is naturally not the case. A promising approach is the investigation of single-crystalline systems. [14][15][16][17][18][19] In such systems, it is shown, for example, that the magnetic coupling between AFM and FM layers is due to

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“…The technological importance and interesting physics involved in EB has triggered massive research work to reveal its complex and subtle nature [4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23]. Initially, the EB effect was believed to be of interfacial nature [4,5], which was backed by some models [6][7][8][9].…”

Section: Introductionmentioning

confidence: 99%

“…We have chosen Ni/Ni ~25 Mn ~75 / Ni/Cu 3 Au(0 0 1) for our study. Ni x Mn 1−x on Cu 3 Au(0 0 1) is a wellstudied singlecrystalline AFM system, the growth, structural and magnetic properties of which are known [13,21,22,27,28]. Whereas NiMn grows along the a axis on Cu(0 0 1) [29], on Cu 3 Au(0 0 1) it is oriented with the c axis along the film normal [27].…”

Section: Introductionmentioning

confidence: 99%

Coupling of pinned magnetic moments in an antiferromagnet to a ferromagnet and its role for exchange bias

Khan

Shokr

Kuch

2019

J. Phys.: Condens. Matter

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The interaction between uncompensated pinned magnetic moments within an antiferromagnetic (AFM) layer and an adjacent ferromagnetic (FM) layer responsible for the existence of exchange bias is explored in epitaxially grown trilayers of the form FM2/AFM/FM1 on Cu3Au(0 0 1) where FM1 is ~12 atomic monolayers (ML) Ni, FM2 is 21–25 ML Ni, and AFM is 27 ML or 50 ML Ni~25Mn~75. Field cooling for parallel or antiparallel alignment of the out-of-plane magnetizations of the two FM layers does not make a difference for the temperature-dependent coercivity (H C), magnitude of exchange bias field (H eb), AFM ordering temperature (T AFM), and blocking temperature for exchange bias (T b). We explain this by a model in which the uncompensated pinned magnetic moments distributed within the volume of the AFM layer interact with both of the FM layers, albeit with different strength. Parallel and antiparallel coupling between the magnetization of the pinned moments and the FM layers equally exists. This leads to the experimentally observed independence of H C, H eb, as well as of T AFM and T b on the magnetization direction of the FM layers during field cooling. These results provide new and detailed insight into revealing the subtle and complex nature of the exchange bias effect.

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Temperature-induced sign change of the magnetic interlayer coupling in Ni/Ni25Mn75/Ni trilayers on Cu3Au(001)

Cited by 6 publications

References 32 publications

Spintronic leaky-integrate-fire spiking neurons with self-reset and winner-takes-all for neuromorphic computing

Spintronic leaky-integrate-fire spiking neurons with self-reset and winner-takes-all for neuromorphic computing

Bulk and Interfacial Effects in the Co/NixMn100−x Exchange‐Bias System due to Creation of Defects by Ar+ Sputtering

Coupling of pinned magnetic moments in an antiferromagnet to a ferromagnet and its role for exchange bias

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