Many of the potential applications for metal organic frameworks (MOFs) focus on exploiting their porosity for molecular storage, release and separation where the functional behaviour is controlled by a subtle balance of host-guest interactions. Typically the host structure is relatively unperturbed by the presence of guests, however, a subset of metal organic frameworks exhibit dramatic phase change behaviour triggered by the adsorption of guests or other stimuli, for which the MIL-53 material is an archetype. In this work, we use density functional approaches to examine the electronic structure changes associated with changes of phase and density and find the associated change in band gaps can be larger than 1 eV for known MIL-53 type materials and hypothecated structures. Moreover, we show that internal pressure (via guest molecules) and external pressure can exert a major influence on the band gap size and gap states. The large response in electronic properties to breathing transitions in MOFs could be exploitable in future applications in resistive switching, phase change memory, piezoresistor, gas sensor, and thermochromic materials.structure of non-conducting MOFs, although the more widespread parlance of band gap terminology is still de facto and we will refer to both band gaps and HOMO-LUMO nomenclature in this work.The MOF literature is dominated by synthesis and characterisation reports of new materials and input from theory typically focuses on rationalising observation through classical simulations of host-guest interactions. Nevertheless, there are an increasing number of electronic studies of MOFs which date back more than decade: early work of Dovesi reported a high-level ab initio study of the electronic properties of MOF-5, 10 through tight-binding calculations, Kuc et al. found the band gaps of a series of Zn-based isoreticular MOFs (IRMOFs) are determined by the carbon sp 2 states of the organic linkers and longer linkers yield smaller band gaps. 9 In a recent density functional theory (DFT) study by Pham et al., halogen functionalization of the organic linkers of IRMOFs was found to modify the band gaps and also affect the absolute positions of the valence band maxima. 11 The nature of the metal centres also affects electronic properties; using DFT, Fuentes-Cabrera et al. studied IRMOF1 with different metal centres, including Be, Mg, Ca, Zn and Cd, and found all these materials possess similar band gaps but distinct conduction band splitting, and that the metallicity can be influenced by selective metal doping. 12 Tunable electronic properties of IRMOFs have been verified in different experiments. For example, in a recent UV/Vis spectroscopy experiment by Gascon et al., it was reported the band gaps of IRMOFs are conditioned by the organic linkers of IRMOFs, and that 1,4-or 2,6-naphthalenedicarboxylic acid organic linkers yielded the smallest band gaps (~ 3.3 eV) . 13 In another experiment by Lin et al., it was shown that the band gaps of Zn-based MOFs can be tuned by changing the cluster size...