Temperature insensitive 1.3 µm InGaAs/GaAs quantum dot distributed feedback lasers for 10 Gbit/s transmission over 21 km

Gerschutz, F.; Fischer, M.; Koeth, Johannes; Chacinski, M.; Schatz, Richard; Kjebon, O.; Kovsh, A. R.; Krestnikov, I. L.; Forchel, A.

doi:10.1049/el:20063401

Cited by 31 publications

(15 citation statements)

References 8 publications

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“…Good agreements with the experimental results, both for the case of the double laser emission and for the effects of the homogeneous broadening on the lasing spectra are demonstrated. This numerical investigation based on carrier dynamics is of prime importance for the optimization of low cost sources for optical telecommunications as well as for a further improvement of QD laser performances at 1.55 µm on InP substrate, as already demonstrated for InAs-GaAs QDs at 1.3 µm (Dagens et al 2006;Gershutz et al 2006). …”

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confidence: 79%

Lasing spectra of 1.55 μm InAs/InP quantum dot lasers: theoretical analysis and comparison with the experiments

et al. 2008

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In this paper, a theoretical model is used to investigate the lasing spectrum properties of InAs/InP (113)B quantum dot (QD) lasers emitting at 1.55 µm. The numerical model used is based on a multi-population rate equation (MPRE) analysis. It takes into account the effect of the competition between the inhomogeneous broadening (due to the QD size dispersion) and the homogenous broadening as well as a nonlinear gain variation associated to a multimode laser emission. The double laser emission and the temperature dependence of lasing spectra of self-assembled InAs/InP quantum dot lasers is studied both experimentally and theoretically.

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confidence: 79%

Lasing spectra of 1.55 μm InAs/InP quantum dot lasers: theoretical analysis and comparison with the experiments

et al. 2008

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“…In the last years several groups developed QD DFB lasers for the 1.3 µm wavelength range using different technologies, e.g. metal gratings for complex-coupling and lateral gratings [5,6]. Due to the relative high losses inherent to these technologies the lasers still need two facets for lasing operation, which complicates monolithic integration.…”

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confidence: 99%

Quantum-dot based distributed feedback lasers and electro-absorption modulators for datacom applications

Bimberg

Stubenrauch

Stracke

et al. 2012

2012 14th International Conference on Transparent Optical Networks (ICTON)

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The unique properties of quantum dots (QDs) as gain material for semiconductor lasers result in advantageous characteristics like high temperature stability, low noise, low feedback sensitivity and low chirp. Their low internal losses make QD based devices suitable for high-speed telecommunication applications. Increase of data transmission rate by wavelength division multiplexing techniques requires temperature stable longitudinal single-mode transmitters. We present 1.3 µm index-coupled QD distributed feedback (DFB) lasers with p-doped active region showing wide temperature independent operation, high side-mode suppression ratio (> 55 dB) and quantum efficiencies up to 40%. The data rate achieved by direct modulation is exceeded by using QD electroabsorption modulators (EAMs) based on the Quantum-Confined Stark Effect. Presently we achieve a 3 dBbandwidth of 17 GHz and extinction ratios of 18 dB. Monolithic integration of both, DFB and EAM, into a single two-section device provides an inexpensive transmitter unit suitable for metropolitan area network applications. Keywords: quantum dot, electro-absorption modulator, distributed feedback laser. INTRODUCTIONIn the next years the demand on data transmission rate will exceed the intrinsic speed of directly modulated semiconductor lasers. With wavelength division multiplexing techniques the data rates can be increased by the factor of used channels. Therefore distributed feedback lasers, providing longitudinal single-mode emission, are in demand for reducing the spacing between each channel. To increase the data transmission rate single channel electro-absorption modulated distributed feedback lasers (EADFB) based on quantum wells (QW) are used [1]. These two-section devices consist of a DFB laser part and a modulator part. The DFB laser provides a constant single-mode emission and the EAM modulates the output power. These electro-absorption modulators are based on the Quantum-Confined Stark Effect (QCSE) that results in a red shift of the absorption under an applied external electric field [2]. Such devices require insensitivity to temperature variations, optical feedback and low chirp. Thus self-organized semiconductor quantum dot (QD) lasers are largely advantageous as compared to QW lasers for such applications [3,4].In this work we focus on demonstrating separately an advanced type of QD DFB laser and QD EAM modulators, which will be monolithically integrated in a following step. In the last years several groups developed QD DFB lasers for the 1.3 µm wavelength range using different technologies, e.g. metal gratings for complex-coupling and lateral gratings [5,6]. Due to the relative high losses inherent to these technologies the lasers still need two facets for lasing operation, which complicates monolithic integration. We present here an index grating fabricated by a two-step growth process, comparable to [7] and [8], for multi-section DFB lasers. QD EAMs were predicted by [9] and statically demonstrated by [10] and [11] before. We fabricated and characteriz...

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“…For longer-distance applications, QD distributed feedback (DFB) lasers with single-longitudinal-mode oscillation have also been investigated. Most of them utilised laterally loss-coupled gratings [5,6], while we adopted InGaP/GaAs index-coupled gratings and successfully exhibited temperature-stable single-longitudinal-mode operation with the sidemode suppression ratios (SMSR) of more than 45 dB [7]. In these QD DFB lasers, however, the limited operating temperature range and the modulation bandwidth still remain to be improved for practical applications.…”

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confidence: 99%

Wide-temperature-range 10.3 Gbit/s operations of 1.3 µm high-density quantum-dot DFB lasers

et al. 2011

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Wide-temperature-range 10.3 Gbit/s operations of 1.3 mm distributed feedback (DFB) lasers using high-density quantum dots are presented. Clearly opened eye diagrams are obtained from 240 to 808C with extinction ratios of more than 5.2 dB.Introduction: Owing to their unique characteristics such as ultra-low threshold currents and temperature insensitivity [1], quantum-dot (QD) lasers have been actively investigated as next generation light sources. In particular, self-assembling growth techniques of In(Ga)As QDs on GaAs substrates have accelerated the development of the QD lasers emitting at 1.3 mm for optical communication systems [2,3]. Temperature-stable 10 Gbit/s operation under low-drive-current conditions has been demonstrated for Fabry-Pérot (FP) QD lasers [4]. For longer-distance applications, QD distributed feedback (DFB) lasers with single-longitudinal-mode oscillation have also been investigated. Most of them utilised laterally loss-coupled gratings [5, 6], while we adopted InGaP/GaAs index-coupled gratings and successfully exhibited temperature-stable single-longitudinal-mode operation with the sidemode suppression ratios (SMSR) of more than 45 dB [7]. In these QD DFB lasers, however, the limited operating temperature range and the modulation bandwidth still remain to be improved for practical applications.To improve these characteristics, the modal gain of the QD active layers must be increased. Higher modal gain will improve not only the light-current characteristics especially at high temperatures but also the modulation bandwidth, which is mainly limited by the large damping factor [4]. Recently, we have succeeded in increasing the quantum-dot density to 5.9 × 10 10 cm 22 by optimising the growth conditions and demonstrated 10 Gbit/s temperature-insensitive operation up to 1008C using FP lasers [8].In this Letter, we apply these high-density QDs to the DFB lasers with InGaP/GaAs gratings. In the fabricated lasers, we demonstrate 10.3 Gbit/s operation over a wide temperature range from 240 to 808C with clearly opened eye diagrams as well as the temperaturestable light-current characteristics under single-longitudinal-mode oscillation.

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Temperature insensitive 1.3 µm InGaAs/GaAs quantum dot distributed feedback lasers for 10 Gbit/s transmission over 21 km

Cited by 31 publications

References 8 publications

Lasing spectra of 1.55 μm InAs/InP quantum dot lasers: theoretical analysis and comparison with the experiments

Lasing spectra of 1.55 μm InAs/InP quantum dot lasers: theoretical analysis and comparison with the experiments

Quantum-dot based distributed feedback lasers and electro-absorption modulators for datacom applications

Wide-temperature-range 10.3 Gbit/s operations of 1.3 µm high-density quantum-dot DFB lasers

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