Temperature limitations for stimulated emission in 3–4 μ m range due to threshold and non-threshold Auger recombination in HgTe/CdHgTe quantum wells

Abstract

We report on the stimulated emission (SE) from HgTe/CdHgTe quantum well (QW) heterostructures up to 240 K at 3.7 μm wavelength. Based on the temperature dependence of the SE threshold, a total Auger recombination (AR) coefficient of 10−27 cm6/s has been deduced for HgTe/CdHgTe QWs, which is much lower than that for bulk HgCdTe with the same bandgap and indicates suppression of (threshold) AR processes due to the symmetry of carrier dispersion curves. We demonstrate that QW-specific, non-threshold AR contributes strongly to the temperature quenching of laser action from HgTe/CdHgTe QWs. We expect, however, that the above processes may be partially suppressed via introduction of wide-gap CdHgTe barrier layers with a [Cd] fraction of 80% or higher. In this case, lasing up to at least 270 K at 3.7 μm wavelength seems feasible.

Актуальные Проблемы Физики Полупроводников: Наноструктуры, Эпитаксия, Фотоника И Электроника. Научные Результаты ИФП СО РАН За 2020 Год

“…77à) aeåëåçî êîíöåíòðèðóåòñÿ â êðóïíûõ ãðàíóëàõ (~ 30 íì), îäíîðîäíî ðàñïðåäåëåííûõ â ìàòðèöå è â íåáîëüøèõ íàíîêëàñòåðàõ (5-10 íì) ìåaeäó êðóïíûìè ãðàíóëàìè. Êðóïíûå ãðàíóëû ñôîðìèðîâàíû íåñêîëüêèìè íàíîêðèñòàëëàìè á-Fe ñ ðàçëè÷íîé ïðîèçâîëüíîé êðèñòàëëîãðàôè÷åñêîé îðèåíòàöèåé îñè - [100] îòíîñèòåëüíî ïîâåðõíîñòè ïîäëîaeêè.  ñèëó ýòîãî íà ÂÐÝÌ èçîáðàaeåíèè ýòèõ íàíîêðèñòàëëîâ íå âèçóàëèçèðóåòñÿ èõ êðèñòàëëè÷åñêàÿ ðåøåòêà.…”

“…Äëÿ ïëåíîê, ñèíòåçèðîâàííûõ èç ãàçîâîé ñìåñè òèïà II (ðèñ.77b) á-Fe òàêaeå ïðèñóòñòâóåò, êàê â âèäå ñðàâíèòåëüíî êðóïíûõ íàíîêðèñòàëëîâ á-Fe, òàê è â âèäå íåáîëüøèõ áëèçêîðàñïîëîaeåííûõ íàíî÷àñòèö. Âàaeíûì îòëè÷èåì äëÿ ýòèõ ïëåíîê ÿâëÿåòñÿ òîò ôàêò, ÷òî ïðàêòè÷åñêè ó âñåõ íàíîêðèñòàëëû á-Fe êðèñòàëëîãðàôè÷åñêàÿ îñü [100], êîòîðàÿ ñîîòâåòñòâóåò îñè ëåãêîãî íàìàãíè÷èâàíèÿ äëÿ á-Fe, îðèåíòèðîâàíà ïðèìåðíî ïåðïåíäèêóëÿðíî ê ïëîñêîñòè (001) Si. Âìåñòå ñ êëàñòåðàìè á-Fe íàáëþäàþòñÿ îòäåëüíûå êðèñòàëëè÷åñêèå âêëþ÷åíèÿ êàðáèäà êðåìíèÿ SiC.…”

Влияние параметров квантовой ямы на спектр двумерных плазмонов в гетероструктурах HgTe/CdHgTe

“…Расчет проводился для структур, выращенных на плоскости (013) CdTe, поскольку они наиболее часто используются для наблюдения лазерной генерации [7][8][9]. Концентрации электронов и дырок полагались одинаковыми, а температура T = 4.2 K. Функции распределения электронов в зонах полагались равными…”

Hot phonon effects and suppressed Auger recombination on 3 $μ$m room temperature lasing in HgTe-based multiple quantum well diodes

“…As shown in recent works [16][17][18] when using HgTe active layers it is possible to suppress Auger recombination due to Dirac-like energy dispersion. As a result, interest in this system of materials was revived, and with optical pumping it was possible to observe stimulated emission at wavelengths of 3.7 [19], 2.8 [20], and 2.45 µm [21] at temperatures of 240, 250, and 300 K, respectively.…”