Temperature measurement performance of silicon piezoresistive MEMS pressure sensors for industrial applications

Abstract

Temperature and pressure are the most common parameters to be measured and monitored not only in industrial processes but in many other fields from vehicles and healthcare to household appliances. Silicon microelectromechanical (MEMS) piezoresistive pressure sensors are the first and the most successful MEMS sensors, offering high sensitivity, solid-state reliability and small dimensions at a low cost achieved by mass production. The inherent temperature dependence of the output signal of such sensors adversely affects their pressure measurement performance, necessitating the use of correction methods in a majority of cases. However, the same effect can be utilized for temperature measurement, thus enabling new sensor applications. In this paper we perform characterization of MEMS piezoresistive pressure sensors for temperature measurement, propose a sensor correction method, and demonstrate that the measurement error as low as ± 0.3 °C can be achieved.

Characterization of Pressure Sensor for Liquid-Level Measurement in Sloshing Condition

“…However, thermal dependence of piezoresistive sensors negatively affects level measurement stability. As result, the measurement may exhibit large systematic errors [25]. Therefore, correction methods are necessary to improve the measurement performance.…”

A method enabling simultaneous pressure and temperature measurement using a single piezoresistive MEMS pressure sensor

“…A continuous research in the field of silicon pressure sen sors, performed at the ICTM-Center of Microelectronic Technologies during the last 30 years [12][13][14][15][16][17][18], resulted in many different products, from sensing elements to indus trial instrumentation. Of particular interest here is the ICTM SP12 silicon MEMS piezoresistive pressure sensing element, intended for measurement of absolute or relative pressure from 10 5 Pa to 10 7 Pa (1 bar to 100 bar).…”