2007
DOI: 10.1016/j.diamond.2006.11.054
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Temperature sensibility of amorphous diamond films prepared by filtered arc

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Cited by 3 publications
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“…-hardness reaches values up to 80 GPa [147,156], -Poisson ratio is reported to be within 0.12 [157] and 0.202 [158], -optical band gap can be high as 3.6 eV [159,160], -films are p-type semiconductors [161], -electrical resistivity ranges up to 10 -8 … 10 -10 Ohm-cm at room temperature [92], -thermal conductivity up to 10 W/mK [162,163], -thermal stability of hardness and elastic modulus up to at least 850 °C in vacuum [164], -thermal stability of the sp 3 fraction between -190°C as a lower limit [165] and 1100 °C as an upper limit under vacuum [166], -Start of oxidation in air ca. 450 °C [167].…”
mentioning
confidence: 99%
“…-hardness reaches values up to 80 GPa [147,156], -Poisson ratio is reported to be within 0.12 [157] and 0.202 [158], -optical band gap can be high as 3.6 eV [159,160], -films are p-type semiconductors [161], -electrical resistivity ranges up to 10 -8 … 10 -10 Ohm-cm at room temperature [92], -thermal conductivity up to 10 W/mK [162,163], -thermal stability of hardness and elastic modulus up to at least 850 °C in vacuum [164], -thermal stability of the sp 3 fraction between -190°C as a lower limit [165] and 1100 °C as an upper limit under vacuum [166], -Start of oxidation in air ca. 450 °C [167].…”
mentioning
confidence: 99%