Temperature-sensitive mechanism for silicon blocked-impurity-band photodetectors

Zhu, He; Zhu, Jiaqi; Hu, Weida; Xiao, Yunlong; Shen, Jinyong; Li, Qing; Zhang, Kun; Deng, Ke; He, Ting; Wu, Huizhen; Li, Ning; Lü, Wei

doi:10.1063/5.0065468

Cited by 10 publications

(4 citation statements)

References 23 publications

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“…The response spectra of the bare Si-based BIB detectors and the metal grating/Si-based BIB detectors with BLs of different thicknesses (2 and 5 μm) were measured at 4 K, as shown in Figure 4 a,b, respectively. The cut-off wavelengths of the bare Si-based BIB detectors (the black curves) are approximately 40 μm (~31 meV), which is close to the activation energy of the P impurity band in the Si matrix [ 18 ]. For the bare BIB detector with a 2 μm BL, a main peak and four shoulder peaks located at 18.30, 12.81, 15.00, 22.30, and and 28.33 μm can be observed.…”

Section: Resultsmentioning

confidence: 99%

Wavelength Modulation Characteristics of Metal Gratings on Si-Based Blocked-Impurity-Band (BIB) Terahertz Detectors

Chen¹,

Dong²,

Zhou³

et al. 2022

Micromachines

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In this work, the wavelength selection characteristics of metal gratings on Si-based blocked-impurity-band (BIB) detectors in the terahertz band were studied by performing experiments and a finite difference time domain (FDTD) simulation. The transmission spectra of metal gratings with different periods on 130 μm intrinsic Si substrates were measured. When the metal grating period increased from 16 to 20 to 32 μm, the peak position of the spectrum moved from 21.71 to 24.50 to 36.59 μm, which is in good agreement with the FDTD simulation results. The structure with the period of 32 μm shows the best wavelength selective transmission characteristics. Then, the bare Si-based BIB devices and metal grating/Si-based BIB hybrid devices with different thicknesses of blocking layers of 2 and 5 μm were fabricated. By covering different periods of metal gratings for the devices with a thicker blocking layer of 2 μm, we obtained more effective wavelength selection characteristics and stronger response spectra enhancement ratios that were about 1.3, 2.4, or 1.9 times. This was mainly due to the localized optical field enhancement effect of the plasmons resonance in metal gratings, which decays exponentially in a vertical direction. Our results demonstrate a new approach for the Si-based BIB detector to realize multiband selective detection applications.

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Section: Resultsmentioning

confidence: 99%

Wavelength Modulation Characteristics of Metal Gratings on Si-Based Blocked-Impurity-Band (BIB) Terahertz Detectors

Chen¹,

Dong²,

Zhou³

et al. 2022

Micromachines

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“…In addition to the interband, sub-band, and mini-band transitions, the impurity band transition is another promising longwave IR detection structure in van der Waals materials. [102][103][104] Figure 13d shows a blocked impurity band (BIB) structure, mainly composed of three functional regions: a doped absorption layer, an intrinsic blocked layer, and an electrode layer. With an increase in the impurity concentration in the doped absorption layer, the valence electron wave functions of adjacent impurity atoms overlap, and thus the originally dispersed impurity energy levels will be widened into impurity energy bands.…”

Section: Potential Structure Beyond Junctions In Van Der Waals Photod...mentioning

confidence: 99%

Next‐Generation Photodetectors beyond Van Der Waals Junctions

et al. 2023

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With the continuous advancement of nano‐fabrication techniques, development of novel materials, and discovery of useful manipulation mechanisms in high‐performance applications, especially photodetectors, the morphology of junction devices and the way junction devices are used have been fundamentally revolutionised. Simultaneously, new types of photodetectors that do not rely on any junction, providing high signal‐to‐noise ratio and multidimensional modulation, have also emerged. This review outlines a unique category of material systems supporting novel junction devices for high‐performance detection, namely the van der Waals materials, and systematically discusses new trends in the development of various types of devices beyond junctions. This field is far from mature and there are numerous methods to correctly measure and evaluate photodetectors. Therefore, we also aim to provide a solution from the perspective of applications in this review. Finally, based on the insight into the unique properties of the material systems and the underlying microscopic mechanisms, emerging trends in junction devices are discussed, a new morphology of photodetectors is proposed, and some potential innovative directions in the subject area are suggested.This article is protected by copyright. All rights reserved

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“…1, a). This feature of ρ(T ) is taken into account in the development of cryothermal resistances and photodetectors (from infrared to terahertz wavelengths) based on crystalline semiconductors (see, for example, [1][2][3]).…”

Section: Introductionmentioning

confidence: 99%

Maximum hopping direct current conductivity via hydrogen-like impurities in semiconductors

et al. 2022

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A quasi-classical model for calculating DC (direct current) electrical conductivity in crystalline semiconductors with hydrogen-like impurities is developed at the transition from band conduction to impurity hopping conduction with decreasing temperature. This transition from the minimum band conductivity to the maximum hopping conductivity via impurities has the form of a characteristic "kink" in the temperature dependence of the electrical resistivity. The idea of the calculation is to preliminarily determine the transition temperature Tj using the standard approach within the framework of the two-band model. The shift of the top of the v-band (the bottom of the c-band) into the depth of the band gap due to the formation of a quasi-continuous band of allowed energy values from the excited states of acceptors (donors) is taken into account. This leads to a decrease in the value of a thermal ionization energy of the majority shallow impurities due to a decrease in the maximum localization radius of a hole on an acceptor (an electron on a donor) with increasing impurity concentration. The values of the observed maximum hopping conductivity and drift hopping mobility corresponding to the temperature Tj are calculated. The numerical calculation within the framework of the proposed model is consistent with the known experimental data on the electrical conductivity and Hall coefficient of moderately compensated p-Ge crystals doped by neutron transmutation and non-intentionally compensated metallurgically doped n-Ge, as well as n- and p-Si crystals on the insulator side of the Mott insulator--metal concentration phase transition. Keywords: bulk crystals of germanium and silicon, hydrogen-like acceptors and donors, holes and electrons, band and hopping motion of charge carriers.

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Temperature-sensitive mechanism for silicon blocked-impurity-band photodetectors

Cited by 10 publications

References 23 publications

Wavelength Modulation Characteristics of Metal Gratings on Si-Based Blocked-Impurity-Band (BIB) Terahertz Detectors

Wavelength Modulation Characteristics of Metal Gratings on Si-Based Blocked-Impurity-Band (BIB) Terahertz Detectors

Next‐Generation Photodetectors beyond Van Der Waals Junctions

Maximum hopping direct current conductivity via hydrogen-like impurities in semiconductors

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