Temperature sensitivity analysis of SGO metal strip JL TFET

Abstract

Temperature sensitivity is one of the major concern in conventional stacked gate-oxide junctionless tunnel-field-effect transistor (SGO-JL-TFET). In this regard, the authors have investigated the sensitivity toward the temperature variation of the SGO-JL double-gate TFET with low work-function live strip (LWLS-SGO-JL-TFET) and without LWLS-SGO-JL-TFET (SGO-JL-TFET). Furthermore, they have analysed and compared the impact of operating temperature variation on the DC, analogue/ radiofrequency and linearity performances of both the devices with the help of simulation results obtained using technology computer-aided design tool. It can be stated that the proposed device is less sensitive toward the temperature variation in terms of carrier concentration, electric field, on-state current and off-state current, as compared with conventional SGO-JL-TFET. Apart from these parameters, proposed device also demonstrates better temperature sensitivity in terms of analogue performance parameters such as transconductance (g m) cutoff frequency (f T), gain bandwidth product and maximum oscillating frequency (f max). Therefore, the proposed device can be a potential candidate for cryogenics and high-temperature applications.

Improvements in reliability and radio frequency performance of junctionless tunnelling field effect transistor using p+ pocket and metal strip

“…Figure 12 shows the transfer characteristics of the proposed device with temperature ranges from 250 to 400 K. As shown in this figure, the variation in the thermionic injection current with temperature is larger due to its dependency on the thermally generated carriers in the conduction band of channel and source, which increases exponentially with temperature [13, 14]. However, ON current (I on ) is less sensitive towards the temperature variation because it depends on the BTBT of charge carriers, rather than temperature [30].…”

Temperature Sensitivity Analysis of Extended Source Double Gate Tunnel Field Effect Transistor

“…Another important parameter for RF performance analysis of the device is maximum oscillating frequency (f max ). Which is formulated as follows [28] 1.0x10 -3 The f max variation for SGO-DG-TFET and ESDG-TFET with V GS at the temperature ranges from 300K to 480K is illustrated in Fig. 6(a) and Fig.…”

“…Where R S is assumed to be 50 Ω for most RF applications. To achieve better linearity and lower distortion of the device, VIP3 and IIP3 should be higher, while IMD3 must be lower [28]. Fig.…”

“…In addition to the above issues, temperature-induced performance variation is also one of the major causes of concern in TFETs. Few works of literature [28][29][30][31] have reported the temperature sensitivity of different TFETs in terms of various performance parameters. Since the temperature induced performance variation in the device depends on the design, therefore, to improve the device reliability, a stack gate oxide (SiO 2 +Hf O 2 ) is applied, which makes the device less sensitive to various interface trap charges [32].…”

Temperature dependence of analogue/RF performance, linearity and harmonic distortion for dual‐material gate‐oxide‐stack double‐gate TFET

“…In the recent research, to address the scaling limit issues of the metal-oxide-semiconductor field effect transistors (MOSFETs) several types of low geometry devices have been investigated [1][2][3][4][5]. Among them the tunnel field effect transistor (TFET) is regarded as one of the most promising alternatives of conventional MOSFET as it can get the better of the subthreshold swing (SS) limitation as well as the leakage current issue of the conventional device due to its working principle based on quantum tunnelling of charge carriers rather than thermionic emission [6][7][8][9][10][11][12][13][14][15][16][17][18]. However, TFET has been reported to be suffering, mainly with ambipolar conduction and limited ONstate current (I ON ) due to the poor band-to-band tunnelling (BTBT) efficiency [11][12][13][14][15][16][17][18][19][20][21].…”