Temperature Tweaking of the Output Photovoltaic Parameters of Laser Power Converters

Shvarts, М. Z.; Emelyanov, V. M.; Malevskiy, D. A.; Mintairov, M. A.; Mintairov, S. A.; Nakhimovich, M. V.; Pokrovskiy, P. V.; Salii, R. A.; Kalyuzhnyy, N. A.

doi:10.1109/led.2020.3012023

Cited by 14 publications

(5 citation statements)

References 20 publications

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“…Temperature dependence in the parameter J 0 leads to an approximately linear reduction in V OC with increasing temperature [56], [57], [58], [59], [60]. From Dupré et al [57], we assume that…”

Section: B Impact Of Nonuniform Illumination On V Ocmentioning

confidence: 99%

InP- and GaAs-Based Photonic Power Converters Under O-Band Laser Illumination: Performance Analysis and Comparison

Beattie

Helmers

Forcade

et al. 2023

IEEE J. Photovoltaics

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Photonic power converters (PPCs), which convert narrow-band light to electricity, are essential components in powerby-light systems. When designed for telecommunications wavelengths such as the O-band, near 1310 nm, the devices are wellsuited to power-over-fiber applications. Despite the potential for very high power conversion efficiencies (> 50%), PPCs can be adversely affected by high-intensity nonuniform illumination conditions. In this work, we characterized two O-band PPC designs based on: high-quality InGaAsP absorber material lattice-matched to an InP substrate, and metamorphic InGaAs absorber material lattice-mismatched to a GaAs substrate, a more cost-effective and scalable alternative. We measured each device under O-band laser illumination with five beam profiles having peak-to-average ratios ranging from 2 to 11. Both devices were insensitive to the beam uniformity for input illumination with average irradiance below 2 W/cm 2 over their 5.4-mm 2 active areas, but exhibited better open-circuit voltages under larger, more uniform illumination profiles at higher incident powers. Measured efficiencies reached 52.8% and 48.7% for the lattice-matched and mismatched devices, respectively. Distributed circuit modeling results suggested that both lateral conduction losses and localized heating effects were responsible for the measured dependence on beam-size. Our work demonstrates the potential for O-band PPCs, presenting two highly efficient designs suitable for powering devices requiring 250 mW, with an appropriate illumination profile.

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Section: B Impact Of Nonuniform Illumination On V Ocmentioning

confidence: 99%

InP- and GaAs-Based Photonic Power Converters Under O-Band Laser Illumination: Performance Analysis and Comparison

Beattie

Helmers

Forcade

et al. 2023

IEEE J. Photovoltaics

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“…It clearly indicates that at any wavelengths in λ Ρ ˜λΒΕ the 1st cell can be current-limited, so do the Nth cell at any wavelengths in λ Δ,Ν ˜λΣ .λ Δ,ι is the smallest wavelength among wavelengths at which the difference of J sc between the ith cell and its adjacent sub-cell (J sc,i-1 -J sc,i ) greater than 0, and is expressed as λ Δ,Ν when i is N. λ Σ is the minimum wavelength corresponding to the intersection points of allλ -J sc,i curves. λ Ρ is the maximum wavelength corresponding to the intersection points of all λ -J sc,i curves.λ ΒΕ is the wavelength corresponding to the absorption edge of GaAs semiconductors which is about 870 nm at 300 K. The SR measurement of the GaAs MJLPCs at high temperature or radiated by high-energy particles is also a concern [11,13]. To assess the applicability of the above principle of current limiting to the GaAs MJLPCs at high temperature as well as those with large defect density, we studied the variations of {J sc,i }(1[?]i[?…”

Section: Principle Of Current Limiting For Gaas Mjlpcsmentioning

confidence: 99%

“…Designing of high-efficiency GaAs MJLPCs is based on the principle that each subcell can generate the same current for a specific target wavelength. However, GaAs MJLPCs are prone to severe current mismatches among sub-cells due to the factors such as wavelength detuning of laser, manufacturing tolerances, temperature rise or increased defect density, leading to a significant decrease in conversion efficiency and reliability [11][12][13][14][15]. Minimizing the current-mismatching issue requires a quantitative understanding of the properties of the sub-cells in GaAs MJLPCs; thus, it's crucial to characterize the electrical performance of the sub-cells for the design of GaAs MJLPCs with higher efficiency and reliability.…”

Section: Introductionmentioning

confidence: 99%

A noval method of determining bias lights for spectral response measurement of GaAs multi-junction laser power converters and its applications

Sun

Shi

Liu

et al. 2023

Preprint

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Quantitative electrical analysis of sub-cells is crucial for the designing of high-efficiency GaAs multi-junction laser power converters (MJLPCs). Spectral response (SR) measurement is the main mean of characterizing the electrical performance of sub-cell. However, all the sub-cells in GaAs MJLPCs have the same SR range, resulting that finding suitable bias lights to make the sub-cells current-limited is difficult for the SR measurement of GaAs MJLPCs. Here, we report a method of determining bias lights for the SR measurement of GaAs MJLPCs based on the variation rules of simulated short-circuit current densities with wavelengths in the sub-cells of GaAs MJLPCs. The method of determining bias lights is applicable to a variety of GaAs MJLPCs, including in original state, at high temperature or after high-energy particles irradiation. With the method of determining bias lights, the measured external quantum efficiency (EQE) curves of the 1st cell, the 2nd cell and the 3rd cell in a GaAs triple-junction LPC were successfully obtained. The work is anticipated to provide guidelines for further developments of high-efficiency and high-reliability III-V MJLPCs.

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“…Также для целей беспроводной передачи энергии на большие расстояния перспективным спектральным диапазоном являются длины волн порядка 1 µm ввиду как лучшего пропускания атмосферы, так и коммерческой доступности высокомощных лазеров на основе иттрий-алюминиевого граната с длиной волны основной гармоники 1064 nm [7]. Для этой длины волны были созданы ФПЛИ на основе кремния [8] и полупроводниковых соединений А 3 В 5 : InGaAsP [9,10] и InAlGaAs [11], согласованных по параметру решетки с подложкой InP, а также на основе материалов InGaAs, выращиваемых через метаморфный буфер на подложках GaAs [12][13][14].…”

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Высокоэффективные GaInP/GaAs-фотопреобразователи лазерной линии 600 nm

Минтаиров¹,

Малевская²,

Минтаиров³

et al. 2023

Письма В Журнал Технической Физики

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Изготовлены оптимизированные фотопреобразователи на основе гетероструктур GaInP/GaAs, выращенных методом металлоорганической газофазной эпитаксии, для работы с лазерным излучением высокой мощности зелено-красного спектрального диапазона. Для формирования лицевой контактной сетки приборов исследованы контактные системы Au(Ge)/Ni/Au и Pd/Ge/Au. В результате фотопреобразователь лазерной линии с длиной волны 600 nm с Pd/Ge/Au-контактом демонстрировал КПД более 50% вплоть до плотности мощности падающего излучения 30 W/cm2 с максимальным значением 54.4% при 7 W/cm2. Ключевые слова: фотопреобразователь, лазерное излучение, металлоорганическая газофазная эпитаксия (МОСГФЭ), КПД, спектральная чувствительность.

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Temperature Tweaking of the Output Photovoltaic Parameters of Laser Power Converters

Cited by 14 publications

References 20 publications

InP- and GaAs-Based Photonic Power Converters Under O-Band Laser Illumination: Performance Analysis and Comparison

InP- and GaAs-Based Photonic Power Converters Under O-Band Laser Illumination: Performance Analysis and Comparison

A noval method of determining bias lights for spectral response measurement of GaAs multi-junction laser power converters and its applications

Высокоэффективные GaInP/GaAs-фотопреобразователи лазерной линии 600 nm

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