Templated growth strategy for highly ordered topological ferroelectric quad-domain textures

Abstract

Topological quad-domain textures in ferroelectric nanoislands have been considered as enablers for nanoelectric devices. However, the fabrication of ordered arrays of ferroelectric islands exhibiting this domain structure is a challenge. By using substrate patterning to create nucleation sites, highly ordered quad-domain ferroelectric polarization configurations were achieved in BiFeO3 nanoisland arrays. Reversible switching of the quad-domain between the center divergent state with highly conductive domain walls and the center convergent state with insulating domain walls can be realized, resulting in a resistance change with a large on/off ratio. This templated growth strategy enables the controllable fabrication of exotic topological domains and sheds light on their applications for configurable electronic devices.

Laboratory experiments based on tip probe － Scanning probe detection and regulation of ferroelectric domains and their microscopic physical properties

“…Ferroelectric topological domains: (a) The angle-resolved lateral PFM images used to reconstruct the polarization vector map for a selected center domain state [56] ; (b) vector PFM images and vector maps, along with the simulated contours for some typical topological domains in the BFO nanodots [13] . 此外, Tian等 [53] 在模板辅助Ar离子束刻蚀的 BFO纳米岛(直径~400 nm)中观察到了零星的四 象限涡旋与反涡旋对. 与上述中心型拓扑畴相比, 该样品缺陷浓度较小, 其退极化场被屏蔽程度更 小, 因此更容易驱动形成电中性的涡旋型拓扑畴.…”