Templating Nanoporosity in Thin-Film Dielectric Insulators

Hedrick, James L.; Miller, Robert D.; Hawker, Craig J.; Carter, Kenneth R.; Volksen, Willi; Yoon, Do Y.; Trollsås, Mikael

doi:10.1002/(sici)1521-4095(199809)10:13<1049::aid-adma1049>3.0.co;2-f

Cited by 311 publications

(185 citation statements)

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“…Organic porous materials—a class of advanced materials—possess enormous potential for many high‐tech applications, such as bioreactors,1 dielectrics,2 sensors,3 microelectrophoresis,4 thermal insulation,5 and catalysts 6. In general, they can be prepared by phase separation,7 and a hard templating approach, such as those employing colloidal particles 8.…”

mentioning

confidence: 99%

Ordered Mesoporous Polymers and Homologous Carbon Frameworks: Amphiphilic Surfactant Templating and Direct Transformation

et al. 2005

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mentioning

confidence: 99%

Ordered Mesoporous Polymers and Homologous Carbon Frameworks: Amphiphilic Surfactant Templating and Direct Transformation

et al. 2005

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“…In order to enable continued circuit miniaturization it is mandatory that low‐dielectric‐constant (low‐ k ) materials must be used to facilitate device interconnect to reduce crosstalk between adjacent interconnect lines, and decrease capacitance and power consumption. Polymeric organic and inorganic materials, some incorporating porosity are among the leading low‐ k candidates 33. The direct patterning of organic and organometallic low‐ k materials by NIL was first reported by Carter in 2004 34.…”

Section: Nil In Functional Materials For Electronic‐devicesmentioning

confidence: 99%

“…The direct patterning of organic and organometallic low‐ k materials by NIL was first reported by Carter in 2004 34. Two approaches were followed; the first involving the coating of silicon wafers with a silsesquioxane (SSQ) precursor polymer loaded with dendritic macromolecules, or porogens 33. The layer was imprinted with a polymeric UV NIL mold and heated to 150°C, resulting in the vitrification of the polymethylsilsesquioxane (PMSSQ) layer.…”

Section: Nil In Functional Materials For Electronic‐devicesmentioning

confidence: 99%

Nanoimprint Lithography for Functional Three‐Dimensional Patterns

et al. 2010

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Nanoimprint lithography (NIL) is viewed as an alternative nanopatterning technique to traditional photolithography, allowing micrometer-scale and sub-hundred-nanometer resolution as well as three-dimensional structure fabrication. In this Research News article we highlight current activities towards the use of NIL in patterning active or functional materials, and the application of NIL in patterning materials that present both chemistry and structure/topography in the patterned structures, which provide scaffolds for subsequent manipulation. We discuss and give examples of the various materials and chemistries that have been used to create functional patterns and their implication in various fields as electronic and magnetic devices, optically relevant structures, biologically important surfaces, and 3D particles.

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“…The introduction of 10-nm pores into PI for applications such as integrated circuit insulators was pioneered by Hedrick [9], who designed a block copolymer system that could be pyrolyzed at high temperatures to successfully form voids in the PI matrix. However, the small number of produced pores resulted in low porosity.…”

Section: Introductionmentioning

confidence: 99%

Lateral Patterning of Porous Polyimide Film by Exposure to High-Pressure CO2 and UV Light with Photomask

Taki

Kawaseki

Isawa

et al. 2018

J. Photopol. Sci. Technol.

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Porous polyimide film is a promising substrate for high-frequency data transmission owing to its low dielectric constant and low attenuation of signal. In this study, lateral patterning of porous polyimide, consisting of porous and non-porous areas, was performed selectively using a photomask via a two-step UV irradiation method. The first UV irradiation polymerized the tertiary amine monomer that participates in the selective formation of pores with the photomask. The second UV irradiation was administered after the product was exposed to high-pressure CO 2 . The porous structure was observed over the masked area; none or few pores existed over the exposed area. The optimal lateral pattern rate of the porous structure is 21% with an expansion ratio of 1.26 corresponding to porosity. Moreover, the mean diameter of isolated pores was measured at 2.7 μm. The technique used is a promising approach to draw electrical circuits arbitrarily while retaining the mechanical strength and electrical insulation.

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Templating Nanoporosity in Thin-Film Dielectric Insulators

Cited by 311 publications

References 0 publications

Ordered Mesoporous Polymers and Homologous Carbon Frameworks: Amphiphilic Surfactant Templating and Direct Transformation

Ordered Mesoporous Polymers and Homologous Carbon Frameworks: Amphiphilic Surfactant Templating and Direct Transformation

Nanoimprint Lithography for Functional Three‐Dimensional Patterns

Lateral Patterning of Porous Polyimide Film by Exposure to High-Pressure CO2 and UV Light with Photomask

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