Temporary wafer bonding and debonding by an electrochemically active polymer adhesive for 3D integration

Gatty, Hithesh K.; Niklaus, Frank; Stemme, G.; Roxhed, Niclas

doi:10.1109/memsys.2013.6474258

Cited by 3 publications

(1 citation statement)

References 6 publications

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“…26,27 Recently, we have shown debonding on Al-coated Si substrates using the ElectRelease polymer. 28 In another study related to voltage-assisted polymer bonding with Cytop/PMMA, the influence of an applied voltage during bonding on the bond strength was evaluated and it was shown that very high voltages lead to reduced bond strength. However, the involved voltages are much higher than the voltages used for the ElectRelease polymer and different physical mechanisms are involved.…”

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confidence: 99%

Temporary Wafer Bonding and Debonding for 3D Integration Using an Electrochemically Active Polymer Adhesive

Gatty

Schröder

Niklaus

et al. 2014

ECS J. Solid State Sci. Technol.

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The use of thin silicon wafers is an enabling technology for 3D integration in the semiconductor industry. However, thin silicon wafers are fragile to handle and reliable solutions are required for thin wafer handling. This paper reports a novel method of bonding and debonding a thin wafer (<50 μm) using an electrochemically active polymer adhesive. In the presented method the carrier wafer is first spin coated with the adhesive and then bonded to the device wafer by applying force and temperature. Debonding of the wafer is realized at room temperature by applying a voltage between the carrier and the device wafer, which substantially reduces the bond strength. The bonding and debonding properties of the adhesive show that temporary wafer bonding using electrochemically active adhesives has the potential to be an attractive approach for temporary wafer bonding for thin wafer handling in 3D integration processes.

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confidence: 99%

Temporary Wafer Bonding and Debonding for 3D Integration Using an Electrochemically Active Polymer Adhesive

Gatty

Schröder

Niklaus

et al. 2014

ECS J. Solid State Sci. Technol.

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Thermally Reversible and Crosslinked Polyurethane Based on Diels-Alder Chemistry for Ultrathin Wafer Temporary Bonding at Low-Temperature

Liu

Zhang

et al. 2017

2017 IEEE 67th Electronic Components and Technology Conference (ECTC)

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Thin-Wafer Handling with a Heat-Spreader Wafer for 2.5D/3D IC Integration

Lau

Chien

et al. 2013

International Symposium on Microelectronics

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Thin-wafer handling is one of the key enabling technologies for 2.5D/3D IC integration. Usually, it temporary bonds the TSV (through-silicon via)/RDL (redistribution layer) wafer (e.g., passive and active interposers) to a supporting carrier wafer with an adhesive, backgrinds the TSV/RDL interposer wafer to very thin (≤100μm), goes through all the necessary processes, and then de-bonds the thin TSV/RDL interposer wafer from the carrier wafer. In this study, a different route will be taken which eliminates the temporary bonding and de-bonding processes. Emphasis is placed on using a heat-spreader wafer as a supporting carrier wafer during the manufacturing processes and after the assembly is completed (diced), the heat-spreader remains on the thin TSV/RDL interposer. This is a very simple and low-cost thin-wafer handling method for 2.5D/3D IC integration.

show abstract

Temporary wafer bonding and debonding by an electrochemically active polymer adhesive for 3D integration

Cited by 3 publications

References 6 publications

Temporary Wafer Bonding and Debonding for 3D Integration Using an Electrochemically Active Polymer Adhesive

Temporary Wafer Bonding and Debonding for 3D Integration Using an Electrochemically Active Polymer Adhesive

Thermally Reversible and Crosslinked Polyurethane Based on Diels-Alder Chemistry for Ultrathin Wafer Temporary Bonding at Low-Temperature

Thin-Wafer Handling with a Heat-Spreader Wafer for 2.5D/3D IC Integration

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