Terahertz detection in zero-bias InAs self-switching diodes at room temperature

Westlund, Andreas; Sangare, P.; Ducournau, Guillaume; Nilsson, Per-A. ̊ke; Gaquière, Christophe; Desplanque, L.; Wallart, X.; Grahn, Jan

doi:10.1063/1.4821949

Cited by 43 publications

(40 citation statements)

References 16 publications

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“…6 Simulations have shown the feasibility of achieving rectification in graphene using SSD structures. 7,8 SSD detectors have previously been realized in other materials [9][10][11][12] with the most promising results for GaAs SSDs in which an NEP of 330 pW/Hz 1 =2 at 1.5 THz was observed. 13 In this work, detection with rectifying graphene SSDs at frequencies up to 67 GHz is demonstrated.…”

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confidence: 99%

“…Second, the width of the isolating trenches can be reduced to enhance gate-to-channel coupling thus increasing c. 14 The nonoptimized graphene SSDs exhibit similar performance compared to more optimized InAs SSDs with c ¼ 0.35 V À1 and R 0 ¼ 15 kX per channel. 12 Even though the graphene SSDs in this study were only characterized up to 67 GHz, the results point to the graphene SSD as a potential candidate for millimeter wave or even terahertz detection. Graphene SSDs are potentially of interest for transparent electronics.…”

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confidence: 99%

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Graphene self-switching diodes as zero-bias microwave detectors

Westlund

Winters

Ivanov

et al. 2015

Applied Physics Letters

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Self-switching diodes (SSDs) were fabricated on as-grown and hydrogen-intercalated epitaxial graphene on SiC. The SSDs were characterized as zero-bias detectors with on-wafer measurements from 1 to 67 GHz. The lowest noise-equivalent power (NEP) was observed in SSDs on the hydrogen-intercalated sample, where a flat NEP of 2.2 nW/Hz 1 =2 and responsivity of 3.9 V/W were measured across the band. The measured NEP demonstrates the potential of graphene SSDs as zero-bias microwave detectors. Graphene exhibits electronic properties which are relevant for high-frequency applications 1 such as zero-bias detection in passive imaging arrays. 2 Detectors drawing zero bias current offer reduced 1/f-noise compared to biased detectors. Zero-bias detectors are today normally based on heterojunctions or Schottky diodes, reaching noise-equivalent power (NEP) below 20 pW/Hz 1 =2 beyond 100 GHz. 3,4 Zero-bias detection has been demonstrated in graphene field-effect transistors (FETs) with an NEP of 515 pW/Hz 1 =2 at 600 GHz. 5 Self-switching diodes (SSDs) offer a fundamentally different approach to zero-bias detection in which rectification and detection is achieved by a lateral field-effect. 6 Simulations have shown the feasibility of achieving rectification in graphene using SSD structures. 7,8 SSD detectors have previously been realized in other materials 9-12 with the most promising results for GaAs SSDs in which an NEP of 330 pW/Hz 1 =2 at 1.5 THz was observed. 13 In this work, detection with rectifying graphene SSDs at frequencies up to 67 GHz is demonstrated. The SSDs are realized in both as-grown (n-type) and hydrogen-intercalated (p-type) epitaxial graphene on SiC. Figure 1 shows a scanning electron micrograph of a single SSD channel fabricated in epitaxial graphene. The narrow graphene channel behaves as a lateral nanowire transistor. 6 The surrounding flanges act as lateral gates which are directly connected to the drain such that the drain voltage is simultaneously applied to the gates. This has the effect of modulating the carrier density in the nanowire channel generating a nonlinear current-voltage characteristic. 14 The inset shows an SSD design implemented for RF detection with nine nanowire channels acting in parallel to reduce resistance and NEP. 15 The SSDs were fabricated at the end of a 70 lm coplanar transmission line, in order to provide a partial RF match.Graphene was grown on the Si-face of two 20 Â 20 mm 2 nominally on-axis semi-insulating (SI) 4H-SiC substrates in a horizontal hot wall chemical vapor deposition (CVD) reactor. 16 Graphene growth was carried out at 1300 C to 1400 C in vacuum after an initial in-situ surface preparation of the substrates in a hydrogen/silane background. One of the samples was then intercalated in hydrogen at a temperature (pressure) of 800 C (500 mbar) in order to obtain quasi-free standing graphene. SSDs and supplementary test structures were fabricated on the graphene layers with and without H-intercalation. As-grown samples then consisted of a monolayer plus carbon buf...

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confidence: 99%

Graphene self-switching diodes as zero-bias microwave detectors

Westlund

Winters

Ivanov

et al. 2015

Applied Physics Letters

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“…The schematic of 200-GHz detection system is described in Ref. 15. The continuous-wave (CW) THz source has the output power of 2.8 mW and a spot size of 2 mm in diameter.…”

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Ultrahigh sensitive sub-terahertz detection by InP-based asymmetric dual-grating-gate high-electron-mobility transistors and their broadband characteristics

Kurita

Ducournau

Coquillat

et al. 2014

Applied Physics Letters

124

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Ultrahigh sensitive sub-terahertz detection by InP-based asymmetric dual-grating-gate high-electron-mobility transistors and their broadband characteristics Helicity sensitive terahertz radiation detection by field effect transistors We report on the observation of a radiation helicity sensitive photocurrent excited by terahertz (THz) radiation in dual-grating-gate (DGG) InAlAs/InGaAs/InAlAs/InP high electron mobility transistors (HEMT). For a circular polarization, the current measured between source and drain contacts changes its sign with the inversion of the radiation helicity. For elliptically polarized radiation, the total current is described by superposition of the Stokes parameters with different weights. Moreover, by variation of gate voltages applied to individual gratings, the photocurrent can be defined either by the Stokes parameter defining the radiation helicity or those for linear polarization. We show that artificial non-centrosymmetric microperiodic structures with a two-dimensional electron system excited by THz radiation exhibit a dc photocurrent caused by the combined action of a spatially periodic in-plane potential and spatially modulated light. The results provide a proof of principle for the application of DGG HEMT for all-electric detection of the radiation's polarization state. V C 2015 AIP Publishing LLC. [http://dx.

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“…Numerical values obtained for these parameters at zero-bias are 22 A/V 2 and 5 A/V 2 for the non-linearity, and 18 V −1 and 8 V −1 for the channel sensitivity. These parameters are key issues for the generation of DC power; the higher the sensitivity the higher the DC signals, according to the relationships (1) and (2). The most explored high-frequency rectifiers able to operate up to optical frequencies are based on metal-insulator-metal 27,28 or metalinsulator-insulator-metal tunnel barriers.…”

Section: B Diode-like Behavior and DC Power Generationmentioning

confidence: 99%

“…[1][2][3][4] The novel functionalities that those devices exhibit such as the ability to detect extremely weak signals without applied bias, 5,6 their high sensitivity 7 and their capability to operate in the terahertz regime 5,8 make the SSD concept a rewarding tool that have opened a broad range of applications. 9 In this regard, an area of emerging interest where SSDs find potential applications is energy harvesting of long wave thermal infrared emission emitted by Earth.…”

Section: Introductionmentioning

confidence: 99%

Terahertz harvesting with shape-optimized InAlAs/InGaAs self-switching nanodiodes

et al. 2015

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In this letter, self-switching nanochannels have been proposed as an enabling technology for energy gathering in the terahertz (THz) regime. Such devices combine their diode-like behavior and high-speed of operation in order to generate DC electrical power from high-frequency signals. By using finite-element simulations, we have improved the sensitivity of L-shaped and V-shaped nanochannels based on InAlAs/InGaAs samples. Since those devices combine geometrical effects with their rectifying properties at zero-bias, we have improved their performance by optimizing their shape. Results show nominal sensitivities at zero-bias in the order of 40 V−1 and 20 V−1, attractive values for harvesting applications with square-law rectifiers.

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Terahertz detection in zero-bias InAs self-switching diodes at room temperature

Cited by 43 publications

References 16 publications

Graphene self-switching diodes as zero-bias microwave detectors

Graphene self-switching diodes as zero-bias microwave detectors

Ultrahigh sensitive sub-terahertz detection by InP-based asymmetric dual-grating-gate high-electron-mobility transistors and their broadband characteristics

Terahertz harvesting with shape-optimized InAlAs/InGaAs self-switching nanodiodes

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