Terahertz luminescence in strained GaAsN:Be layers under strong electric fields

Shalygin, V. A.; Vorobjev, L. E.; Firsov, D. A.; Panevin, V. Yu.; Sofronov, A. N.; Andrianov, A. V.; Zakhar’in, A. O.; Egorov, A. Yu.; Gladyshev, A. G.; Bondarenko, Olesya V.; Ustinov, V. M.; Zinov’ev, N. N.; Козлов, Д. В.

doi:10.1063/1.2730745

Cited by 23 publications

(7 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…One of the schemes to generate THz radiation relies upon optical transitions between the energy levels of shallow impurities in semiconductors and has been demonstrated under the conditions of impact ionization of impurity centers [1][2][3][4][5][6] or impurity photoionization by optical pumping the transition "impurity ground state-conduction or valence band." 7 Here we introduce, different than cited above, mechanism of THz emission exploiting band-to-band excitation of GaAs doped with shallow donors.…”

Section: Terahertz Photoluminescence From Gaas Doped With Shallow Donmentioning

confidence: 99%

Terahertz photoluminescence from GaAs doped with shallow donors at interband excitation

Zakhar’in¹,

Andrianov²,

Egorov³

et al. 2010

Applied Physics Letters

Self Cite

View full text Add to dashboard Cite

We report on the observation of efficient generation of terahertz radiation at continuous-wave interband excitation of n-GaAs at low temperatures. The radiative transitions, accompanying relaxation and trapping of photoexcited electrons to localized donor states or to empty states in impurity subband, lead to the emission of terahertz photons with a relatively high external quantum yield up to 0.3%.

show abstract

Section: Terahertz Photoluminescence From Gaas Doped With Shallow Donmentioning

confidence: 99%

Terahertz photoluminescence from GaAs doped with shallow donors at interband excitation

Zakhar’in¹,

Andrianov²,

Egorov³

et al. 2010

Applied Physics Letters

Self Cite

View full text Add to dashboard Cite

show abstract

“…Spontaneous THz emission in strained p-doped GaAsN layers under electrical pumping has been observed and studied in Ref. 12. Applications of new materials, such as GaN, provide a possibility for increase in emission intensity and expansion of operating temperature range of the electrically pumped THz emitters based on breakdown of shallow impurities.…”

Section: Introductionmentioning

confidence: 99%

Impurity breakdown and terahertz luminescence in n-GaN epilayers under external electric field

Shalygin

Vorobjev

Firsov

et al. 2009

Journal of Applied Physics

Self Cite

View full text Add to dashboard Cite

Interaction between Si doping and the polarization-induced internal electric field in the AlGaN/GaN superlattice Appl. Phys. Lett. 99, 162105 (2011); 10.1063/1.3655469 Spectroscopic characterization of the electrical properties of Fe implants on Ga In P ∕ Ga As J. Appl. Phys. 102, 073711 (2007) We report on the observation and experimental studies of impurity breakdown and terahertz luminescence in n-GaN epilayers under external electric field. The terahertz electroluminescence is observed in a wide range of doping levels ͑at noncompensated donor density from 4.5ϫ 10 16 to 3.4ϫ 10 18 cm −3 ͒. Spectra of terahertz luminescence and photoconductivity are studied by means of Fourier transform spectrometry. Distinctive features of the spectra can be assigned to intracenter electron transitions between excited and ground states of silicon and oxygen donors and to hot electron transitions to the donor states.

show abstract

“…The energy spectrum of Be acceptors in the GaAs/ AlGaAs QW structure was calculated in the envelope function approximation. Details of calculations are described in [6]. The acceptor Hamiltonian used was a 4 × 4 matrix operator including the Luttinger Hamiltonian, the QW confinement potential due to the valence band discontinuity, and the Coulomb potential.…”

Section: Thz Emission At Electrical Excitationmentioning

confidence: 99%

Impurity-related terahertz emission from quantum well nanostructures

Firsov¹,

Vorobjev²,

Panevin³

et al. 2014

Lith. J. Phys.

Self Cite

View full text Add to dashboard Cite

Terahertz emission in GaAs/AlGaAs quantum well structures doped with shallow impurities was studied in conditions of interband optical excitation for n-doped structures and impurity breakdown in the lateral electric field for p-doped structures. Emission spectra were obtained. It was shown that the observed emission is related to optical transitions of charge carriers between impurity levels and to impurity-band transitions. The depopulation of the final states under interband optical pumping was realized with recombination of non-equilibrium holes and electrons localized at neutral donors.

show abstract

Terahertz luminescence in strained GaAsN:Be layers under strong electric fields

Cited by 23 publications

References 12 publications

Terahertz photoluminescence from GaAs doped with shallow donors at interband excitation

Terahertz photoluminescence from GaAs doped with shallow donors at interband excitation

Impurity breakdown and terahertz luminescence in n-GaN epilayers under external electric field

Impurity-related terahertz emission from quantum well nanostructures

Contact Info

Product

Resources

About