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We report on current injection induced terahertz electroluminescence from 4H-SiC p-n junctions with operating temperature up to 270 K. The emission is assigned to intracenter optical transitions in donor centers, initiated by the injection of non-equilibrium carriers into the n-doped region of a SiC p-n junction. At a pumping current of 300 mA at 100 K, the integrated output power was 58 μW from the device surface with an area of 3 mm2. These results suggest that THz emitting devices can be fabricated with simple structures of SiC p-n junctions, with relatively high operating temperatures and reasonable output powers.

Electroluminescence from silicon-rich nitride/silicon superlattice structures Appl. Phys. Lett. 93, 151116 (2008); 10.1063/1.3003867 Terahertz electroluminescence from superlattice quantum cascade structures Electroluminescence from semitransparent Au film/ SiO 2 /(amorphous-Si/SiO 2 ) superlattice/ p-Si structure

The terahertz (THz) emission with the maximum at the 3–5 THz is observed under electrical pumping from InN epilayers, where structural imperfections such as nanocolumns, pores, and In clusters are situated with a certain periodicity. This radiation is ascribed to the spontaneous emission of surface plasmon polariton like waves guided in thin surface/interior layers and coupled to electromagnetic field at these imperfections. These waves are generated thermally under applied electric field. The registered THz spectra and power dependences are well consistent with this plasmon-related radiation mechanism.

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