We report on current injection induced terahertz electroluminescence from 4H-SiC p-n junctions with operating temperature up to 270 K. The emission is assigned to intracenter optical transitions in donor centers, initiated by the injection of non-equilibrium carriers into the n-doped region of a SiC p-n junction. At a pumping current of 300 mA at 100 K, the integrated output power was 58 μW from the device surface with an area of 3 mm2. These results suggest that THz emitting devices can be fabricated with simple structures of SiC p-n junctions, with relatively high operating temperatures and reasonable output powers.

Electroluminescence from silicon-rich nitride/silicon superlattice structures Appl. Phys. Lett. 93, 151116 (2008); 10.1063/1.3003867 Terahertz electroluminescence from superlattice quantum cascade structures Electroluminescence from semitransparent Au film/ SiO 2 /(amorphous-Si/SiO 2 ) superlattice/ p-Si structure

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