Terahertz Photoconductivity in Bilayer Graphene Transistors: Evidence for Tunneling at Gate-Induced Junctions

Mylnikov, Dmitry; Titova, Elena; Kashchenko, M. A.; Safonov, Ilya V.; Zhukov, Sergey S.; Semkin, Valentin A.; Novoselov, Kostya S.; Bandurin, Denis; Svintsov, Dmitry

doi:10.1021/acs.nanolett.2c04119

Cited by 10 publications

(4 citation statements)

References 43 publications

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“…The plasmonic drag effect leads to the generation of the photocurrent as observed in our experiments. In a bilayer graphene channel, an opening of the gap could be induced for the same biasing conditions as previously reported [ 48 , 49 , 50 ] that would also lead to a behavior very similar to the one observed in the present study.…”

Section: Discussionsupporting

confidence: 87%

Terahertz Detection by Asymmetric Dual Grating Gate Bilayer Graphene FETs with Integrated Bowtie Antenna

Abidi,

Khan,

Delgado-Notario

et al. 2024

Nanomaterials

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An asymmetric dual-grating gate bilayer graphene-based field effect transistor (ADGG-GFET) with an integrated bowtie antenna was fabricated and its response as a Terahertz (THz) detector was experimentally investigated. The device was cooled down to 4.5 K, and excited at different frequencies (0.15, 0.3 and 0.6 THz) using a THz solid-state source. The integration of the bowtie antenna allowed to obtain a substantial increase in the photocurrent response (up to 8 nA) of the device at the three studied frequencies as compared to similar transistors lacking the integrated antenna (1 nA). The photocurrent increase was observed for all the studied values of the bias voltage applied to both the top and back gates. Besides the action of the antenna that helps the coupling of THz radiation to the transistor channel, the observed enhancement by nearly one order of magnitude of the photoresponse is also related to the modulation of the hole and electron concentration profiles inside the transistor channel by the bias voltages imposed to the top and back gates. The creation of local n and p regions leads to the formation of homojuctions (np, pn or pp+) along the channel that strongly affects the overall photoresponse of the detector. Additionally, the bias of both back and top gates could induce an opening of the gap of the bilayer graphene channel that would also contribute to the photocurrent.

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Section: Discussionsupporting

confidence: 87%

Terahertz Detection by Asymmetric Dual Grating Gate Bilayer Graphene FETs with Integrated Bowtie Antenna

Abidi,

Khan,

Delgado-Notario

et al. 2024

Nanomaterials

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“…We complete our empirical analysis of photovoltage at cryogenic temperatures by correlating the positions of responsivity maxima on r V ( V tg1 , V tg2 ) maps and the maps of photoresistance Δ R SD . The latter was measured simultaneously with photoresponse (Figure e) and is discussed in detail in ref . Such a comparison reveals that r V maxima are located in the vicinity of zeros of the photoresistance.…”

Section: Resultsmentioning

confidence: 86%

Ultralow-noise Terahertz Detection by p–n Junctions in Gapped Bilayer Graphene

et al. 2023

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Graphene shows strong promise for the detection of terahertz (THz) radiation due to its high carrier mobility, compatibility with on-chip waveguides and transistors, and small heat capacitance. At the same time, weak reaction of graphene's physical properties on the detected radiation can be traced down to the absence of a band gap. Here, we study the effect of electrically induced band gap on THz detection in graphene bilayer with split-gate p-n junction. We show that gap induction leads to a simultaneous increase in current and voltage responsivities. At operating temperatures of ∼25 K, the responsivity at a 20 meV band gap is from 3 to 20 times larger than that in the gapless state. The maximum voltage responsivity of our devices at 0.13 THz illumination exceeds 50 kV/W, while the noise equivalent power falls down to 36 fW/Hz 1/2 .

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“…Under linearly polarized and global light illumination, the electromagnetic field at one contact paralleled to the polarization direction was enhanced and activated the photoresponse in PdSe 2 (Figure 20h). [ 169 ]…”

Section: Strategies To Enhance the Performance Of Pte Detectorsmentioning

confidence: 99%

2D Materials for Photothermoelectric Detectors: Mechanisms, Materials, and Devices

Dai,

Zhang,

Wang

2024

Adv Funct Materials

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Abstract2D materials, with outstanding optical, thermal, and electric properties, are emerging as promising candidates for fabricating high‐performance photodetectors. Recently, impressive progresses have been made in this area and some challenges are remaining to improve the properties of photodetectors. As one important part in the mainstream photodetection mechanisms, photothermoelectric (PTE) effect is showing unique priorities in fabricating advanced photodetectors, especially broadband detection operating in the mid‐infrared and terahertz spectral regime. Here, recent progress on PTE photodetectors based on layered 2D materials is reviewed. The physical mechanism of PTE effect is first discussed and then the optical and thermoelectric properties of various 2D materials are analyzed. Furthermore, strategies to improve the photodetection performance of PTE detectors are summarized in two major categories including enhanced photothermal conversion and thermoelectric conversion processes. Finally, the challenges and prospects for future research in 2D thermoelectric materials and PTE detectors are also provided.

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Terahertz Photoconductivity in Bilayer Graphene Transistors: Evidence for Tunneling at Gate-Induced Junctions

Cited by 10 publications

References 43 publications

Terahertz Detection by Asymmetric Dual Grating Gate Bilayer Graphene FETs with Integrated Bowtie Antenna

Terahertz Detection by Asymmetric Dual Grating Gate Bilayer Graphene FETs with Integrated Bowtie Antenna

Ultralow-noise Terahertz Detection by p–n Junctions in Gapped Bilayer Graphene

2D Materials for Photothermoelectric Detectors: Mechanisms, Materials, and Devices

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