Terahertz plasmonics in ferroelectric-gated graphene

Jin, Dafei; Kumar, Anshuman; Fung, Kin Hung; Xu, Jun; Fang, Nicholas X.

doi:10.1063/1.4807762

Cited by 50 publications

(49 citation statements)

References 34 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Exploitation of these effects, however, requires local control over the charge carrier density in graphene. The creation of spatially defined p-n junctions in graphene is of critical importance for the modulation of chiral tunnelling 3,4 , magnetoresistance 5 , electron beam collimation 6 , Veselago lensing 7 and terahertz plasmonic devices 8 . Arrayed junctions have been predicted to give anisotropic group velocity renormalization of charge carriers and new Dirac points [9][10][11] , and could also open a transmission gap 12 , increasing the typically low on/off ratios in graphene transistors.…”

mentioning

confidence: 99%

Ferroelectrically driven spatial carrier density modulation in graphene

et al. 2015

View full text Add to dashboard Cite

The next technological leap forward will be enabled by new materials and inventive means of manipulating them. Among the array of candidate materials, graphene has garnered much attention; however, due to the absence of a semiconducting gap, the realization of graphene-based devices often requires complex processing and design. Spatially controlled local potentials, for example, achieved through lithographically defined split-gate configurations, present a possible route to take advantage of this exciting two-dimensional material. Here we demonstrate carrier density modulation in graphene through coupling to an adjacent ferroelectric polarization to create spatially defined potential steps at 180°-domain walls rather than fabrication of local gate electrodes. Periodic arrays of p-i junctions are demonstrated in air (gate tunable to p-n junctions) and density functional theory reveals that the origin of the potential steps is a complex interplay between polarization, chemistry, and defect structures in the graphene/ferroelectric couple.

show abstract

mentioning

confidence: 99%

Ferroelectrically driven spatial carrier density modulation in graphene

et al. 2015

View full text Add to dashboard Cite

show abstract

“…First procedure has been successfully implemented in experimental lead zirconate titanate (PZT) optical shutters with stable performance on its dielectric susceptibility response after a long range of commutation pulses ( 10 4 ∼ ) [8,9], outlining an alternate principle on light transmittance memory devices. Advances in the THz limit technology have also found promising proposals for low power operation on hybrid ferroelectric/graphene layer nanoplasmonic waveguides [10,11]. On this scenario, we introduce the electrical imprint strength as an essential mechanism for the observed offset in the characteristic hysteresis P(E) loop, and calculate the effective index of refraction, the optical transmittance and the shape of memory under typical applied fields up to 300 kV/cm for 800 nm PZT systems in the edge of low THz.…”

Section: Introductionmentioning

confidence: 99%

Electrical imprint effects on far infrared (FIR) transmittance spectrum in PZT ferroelectric films

2015

Optics Communications

View full text Add to dashboard Cite

a b s t r a c tTunable transmittance response in the 0.1-25 THz range for a lead Zirconate Titanate Ferroelectric film under imprint effects and surface anisotropy is calculated by adapting the classical Landau Devonshire theory and Rouard's method. Induced electrical field is introduced by modulating the P E − polarization profile, while the dielectric permittivity frequency dependence enters into the formalism by taking into account the soft phonon mode E(TO1) contribution in the framework of the Drude-Lorentz model. It is found that two optical states of light transmittance emerge at zero applied field and normal incidence, and the intensities of transmitted light are closely correlated with the strength of imprint and the path of the electrical polarization.

show abstract

“…In order to solve the SPP loss problem, low-loss plasmonics based on graphene [9][10][11][12][13][14][15][16][17][18][19][20][21][22][23] and topological insulators (TIs) [24][25][26][27][28][29][30][31] has attracted much recent attention. In far-infrared and THz range, the major loss mechanism in graphene lies in the scattering between electrons and optical phonons [11].…”

Section: Introductionmentioning

confidence: 99%

Tunable THz surface plasmon polariton based on a topological insulator/layered superconductor hybrid structure

Dai

Cui

et al. 2014

Phys. Rev. B

View full text Add to dashboard Cite

We theoretically investigate the surface plasmon polariton (SPP) at the interface between a three-dimensional strong topological insulator (TI) and a layered superconductor/magnetic insulator structure, within the random phase approximation. The tunability of the SPP through electronic doping can be enhanced when the magnetic permeability of the layered structure becomes higher. When the interface is gapped by superconductivity or perpendicular magnetism, the SPP dispersion is further distorted, accompanied by a shift of group velocity and penetration depth. Such a shift of the SPP reaches a maximum when the magnitude of the Fermi level approaches the gap value, and may lead to observable effects. The tunable SPP at the interface between layeredsuperconductor and magnetic materials in proximity to the TI surface may provide new insight in the detection of Majorana fermions.

show abstract

Terahertz plasmonics in ferroelectric-gated graphene

Cited by 50 publications

References 34 publications

Ferroelectrically driven spatial carrier density modulation in graphene

Ferroelectrically driven spatial carrier density modulation in graphene

Electrical imprint effects on far infrared (FIR) transmittance spectrum in PZT ferroelectric films

Tunable THz surface plasmon polariton based on a topological insulator/layered superconductor hybrid structure

Contact Info

Product

Resources

About