Ferroelectrically driven spatial carrier density modulation in graphene

Abstract

The next technological leap forward will be enabled by new materials and inventive means of manipulating them. Among the array of candidate materials, graphene has garnered much attention; however, due to the absence of a semiconducting gap, the realization of graphene-based devices often requires complex processing and design. Spatially controlled local potentials, for example, achieved through lithographically defined split-gate configurations, present a possible route to take advantage of this exciting two-dimensional material. Here we demonstrate carrier density modulation in graphene through coupling to an adjacent ferroelectric polarization to create spatially defined potential steps at 180°-domain walls rather than fabrication of local gate electrodes. Periodic arrays of p-i junctions are demonstrated in air (gate tunable to p-n junctions) and density functional theory reveals that the origin of the potential steps is a complex interplay between polarization, chemistry, and defect structures in the graphene/ferroelectric couple.

Frontiers in strain-engineered multifunctional ferroic materials

“…In an alternative approach, the presence of a ferroelectric polarization can manipulate the carrier density, and in turn, the electronic properties of 2D materials (e.g., graphene) enabling the design of robust field-effect transistors. [142][143][144][145] The considerable excitement about these device concepts has recently lead to the study of ferroelectric/FeRh heterostructures as a new way to harness these effects [ Fig. 7(c)].…”

Transport Phenomena in Graphene in Generalized Landauer – Datta – Lundstrom Model

“…«Плавність» p-n переходу при цьому забезпечується великим значенням ді-електричної проникності сегнетоелектрика (100 і вище) і зумовленим нею сильним «згла-джуванням» електричного потенціалу. Експе-риментально p-n перехід на доменній стінці використаного як підкладка сегнетоелектрика LiNiO 3 вже було реалізовано експерименталь-но в [55].…”

Limits for the graphene on ferroelectric domain wall p-n-junction rectifier for different regimes of current

“…At that Baeumer et al [13] proposed the pnJ in graphene at a ferroelectric domain wall. The principal idea of the latter work is that if graphene is imposed on a 180 o -ferroelectric domain wall (FDW), a pnJ can arise without applying any additional gates, doping or screening.…”

“…For a long time the only way to design pnJs in graphene was the usage of multiple gates or the chemical doping of separate sections of graphene channel, till Hinnefeld et al [12] and Baeumer et al [13] created a pnJ in graphene using the ferroelectric substrates Pb(Zr,Ti)O 3 (PZT) and LiNiO 3 correspondingly. At that Baeumer et al [13] proposed the pnJ in graphene at a ferroelectric domain wall.…”