Terahertz saturable absorbers from liquid phase exfoliation of graphite

Bianchi, Vezio; Carey, Tian; Viti, Leonardo; Li, Lianhe; Linfield, E. H.; Davies, A. G.; Tredicucci, Alessandro; Yoon, Duhee; Karagiannidis, Panagiotis; Lombardi, Lucia; Tomarchio, Flavia; Ferrari, Andrea C.; Torrisi, Felice; Vitiello, Miriam S.

doi:10.1038/ncomms15763

Cited by 101 publications

(127 citation statements)

References 71 publications

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“…Following this, Bianco et al [118] experimentally demonstrated a graphene-based saturable absorber that exhibited a ≈10% increase in transmittance upon saturation. Recently, an improvement in graphene's SA was demonstrated by Bianchi et al [119] While several semiconductors such as GaAs, GaP, www.advopticalmat. de and Ge have been shown to possess saturable absorption in terahertz wavelengths, [120] utilizing graphene provides the added benefit of intracavity integration in subwavelength cavities while incurring minimal losses.…”

Section: Terahertz Saturable Absorbersmentioning

confidence: 99%

2D Materials for Terahertz Modulation

Gopalan

Sensale‐Rodriguez

2019

Advanced Optical Materials

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power consumption and minimizing cross-talk (maintain signal fidelity). As a result, terabit data communication can be made feasible with the help of broadband all-optical devices and circuits. [4] The technology for designing optical components and circuits operating at visible and NIR wavelengths has matured significantly over the last several decades, ensuring their widespread integration. While we can work toward improving data transmission rates of existing communication technology, shortage of spectral bandwidth for data transmission has become a looming problem over time. This has motivated researchers to seek out previously unused portions of the electromagnetic spectrum. The "terahertz gap" (≈30 µm-3 mm) has attracted considerable attention from researchers seeking to bridge the gap between the optical/IR and microwave spectrum. [5,6] Similar to the optical domain, the invention, optimization, and commercialization of discrete components such as sources, modulators, and detectors are necessary for the widespread use and integration of terahertz technologies. Electronic means of terahertz generation utilizing semiconductors (Si, GaAs) IMPATT [7] and Gunn diodes [8] have been developed. In conjunction with a frequency doubler/ tripler circuits, they typically operate on the lower end of the terahertz spectrum (0.1-1 THz); although the power output at higher frequency multiples might be significantly lower as compared to its fundamental mode. Additionally, InGaAs/ InP HBTs and InP HEMTs with cutoff frequencies >600 GHz have been demonstrated. [9,10] The advent of femtosecond lasers has paved the way for the generation of terahertz radiation via photoconductive switches, [11] photo-Dember effect [12,13] and nonlinear optical rectification in organic and inorganic crystals. [14][15][16] Femtosecond lasers have helped develop time domain terahertz systems that have been instrumental in ultrafast spectroscopy to study transient carrier dynamics of semiconductors. Development of terahertz quantum cascade lasers (THz-QCL) employing intersubband transitions in AlGaAs/GaAs quantum wells [17][18][19][20] is a notable milestone in terahertz lasing. In a complementary fashion, terahertz detection could be performed by electro-optic sampling in nonlinear crystals, [21] photoconductive antennas on low-temperature GaAs, [22,23] plasma wave oscillation in a field-effect channel, [24,25] etc. Finally, akin to the compact and economic components available at optical frequencies for the generation, manipulation, and detection, terahertz technology requires Terahertz waves spanning over the 0.1 to 10 THz region of the electromagnetic spectrum have attracted significant attention owing to a variety of potential applications such as short-range high-speed data transmission, noninvasive screening and detection, materials characterization, spectroscopy, etc. This has resulted in massive strides in the development of essential system components such as broadband terahertz sources, detector arrays with high responsivity, as well as...

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Section: Terahertz Saturable Absorbersmentioning

confidence: 99%

2D Materials for Terahertz Modulation

Gopalan

Sensale‐Rodriguez

2019

Advanced Optical Materials

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“…We recently demonstrated THz saturable absorbers by transfer coating and ink-jet printing 50 layer (randomly distributed) graphene films prepared by liquid phase exfoliation of graphite [39]. Through the combination of open-aperture z-scan experiments and Fourier transform infrared (FTIR) spectroscopy, we demonstrate 80% transparency modulation at 3.4 THz [39].…”

Section: Multilayer Graphene-based Saturable Absorbers At Thz Frequenmentioning

confidence: 99%

“…Here, we report on the first evidence of THz saturable absorption in multilayer graphene films, grown via CVD on Nickel. The as-grown multilayer graphene films was transferred onto an intrinsic silicon substrate, and tested by means of an open aperture z-scan transmission experiment following the same experimental procedure described in [39].…”

Section: Multilayer Graphene-based Saturable Absorbers At Thz Frequenmentioning

confidence: 99%

“…An alternative method relies on aperture near field microscopy systems, in which the resolution is limited by the strong reduction of light transmission (T) through an aperture (dimension a), and whose major limits is the transmittance drop, according to the Bethe and Bouwkamp law, that follow the power law: T∼a 6 [39].…”

Section: Near Field Thz Probesmentioning

confidence: 99%

“…I(z) can be written as a function of the beam intensity at the focal point I 0 , and of the Rayleigh length z R : which can be retrieved from the radial spot size and is, in the present case z R ∼330 μm. From the measured power and the beam waist, the pump laser provides an average value I 0 ≈1.2 W cm −2 at the focal point.The overall normalized transmittance can be written as[39]:The experimental normalized transmittance was fitted with the above-mentioned formula for T(z), retrieving a saturable absorption coefficient α S =0.39±0.07 and a non-saturable absorption coefficient α NS =0.12±0.05. The saturation intensity is estimated to be I S =(5.8±0.9) W/cm 2 .…”

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confidence: 99%

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Nanodevices at terahertz frequency based on 2D materials

Vitiello

2019

J. Phys. Mater.

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Artificial semiconductor heterostructures played a pivotal role in modern electronic and photonic technologies, providing a highly effective mean for the manipulation and control of carriers, from the visible to the terahertz frequency range. Despite their exceptional versatility, they commonly require challenging epitaxial growth procedures, due to the need of clean and abrupt interfaces, lattice matching or limited and controlled lattice mismatch, which proved to be major obstacles for the development of room-temperature devices, like sources, detectors or modulators, especially in the far-infrared. The discovery of graphene and the related fascinating capabilities have triggered an unprecedented interest in inorganic two-dimensional materials. Layered materials such as graphene, hexagonal boron nitride, transition metal dichalcogenides, and the more recently re-discovered black phosphorus display an exceptional technological potential for engineering nano-electronic and nanophotonic devices and components 'by design', offering a unique platform for developing devices with a variety of properties. Here, I review our latest achievements in the design and developments of graphene based nanodetectors, saturable absorbers and near field probes operating across the farinfrared.

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Terahertz saturable absorbers from liquid phase exfoliation of graphite

Cited by 101 publications

References 71 publications

2D Materials for Terahertz Modulation

2D Materials for Terahertz Modulation

Nanodevices at terahertz frequency based on 2D materials

Printing 2D Materials

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