Terahertz time-domain spectroscopy characterization of the far-infrared absorption and index of refraction of high-resistivity, float-zone silicon

Dai, Jianming; Zhang, Jiangquan; Zhang, Weili; Grischkowsky, D.

doi:10.1364/josab.21.001379

Cited by 403 publications

(196 citation statements)

References 18 publications

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“…1c): a straightforward calculation of the Fresnel transmission coefficients shows that the transmittance ratio of p-and s-polarized THz radiation is 2.0 ± 0.1 (Ref. 29). This value is in good agreement with the experimental observation (see Fig.…”

mentioning

confidence: 99%

Ultrabroadband single-cycle terahertz pulses with peak fields of 300 kV cm−1 from a metallic spintronic emitter

Seifert

Jaiswal

Sajadi

et al. 2017

Applied Physics Letters

179

128

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To explore the capabilities of metallic spintronic thin-film stacks as a source of intense and broadband terahertz electromagnetic fields, we excite a W/CoFeB/Pt trilayer on a large-area glass substrate (diameter of 7.5 cm) by a femtosecond laser pulse (energy 5.5 mJ, duration 40 fs, wavelength 800 nm). After focusing, the emitted terahertz pulse is measured to have a duration of 230 fs, a peak field of 300 kV cm -1 and an energy of 5 nJ. In particular, the waveform exhibits a gapless spectrum extending from 1 to 10 THz at 10% of amplitude maximum, thereby facilitating nonlinear control over matter in this difficult-to-reach frequency range and on the sub-picosecond time scale.Terahertz (THz) pulses covering the range from 1 to 20 THz are useful resonant probes of numerous low-energy excitations in all phases of matter. Completely new research avenues open up when THz pulses are used to drive rather than probe materials resonances.

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mentioning

confidence: 99%

Ultrabroadband single-cycle terahertz pulses with peak fields of 300 kV cm−1 from a metallic spintronic emitter

Seifert

Jaiswal

Sajadi

et al. 2017

Applied Physics Letters

179

128

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“…In the three-layer calculation, we did not consider absorption in silicon because the three interference layers were sufficiently thin that absorption is negligible. In the substrate calculation, however, we considered the extinction coefficients of silicon [10,11] because the substrate was thick enough that absorption could not be ignored. We note that the measured transmission spectrum of the bulk silicon wafer agreed well with the calculation using the above-mentioned optical constants.…”

Section: Methodsmentioning

confidence: 99%

“…All-silicon filters have superior robustness against cryogenic thermal cycling because it is free from CTE mismatching that plagues conventional heterogeneous thin-film filters. Furthermore, all-silicon filters have high throughput in the THz region owing to low absorption of high-resistivity silicon [10,11]. Silicon is also well-suited for mono-material filters because not only it displays good physical and chemical stability but also micro-fabrication processes have been well established for it.…”

Section: Introductionmentioning

confidence: 99%

Fabrication and Analysis of Three-Layer All-Silicon Interference Optical Filter with Sub-Wavelength Structure toward High Performance Terahertz Optics

Makitsubo

Wada

Kataza

et al. 2016

J Infrared Milli Terahz Waves

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We propose an all-silicon multi-layer interference filter composed solely of silicon with sub-wavelength structure (SWS) in order to realize high performance optical filters operating in the THz frequency region with robustness against cryogenic thermal cycling and mechanical damage. We demonstrate fabrication of a three-layer prototype using well-established common micro-electro-mechanical systems (MEMS) technologies as a first step toward developing practical filters. The measured transmittance of the three-layer filter agrees well with the theoretical transmittances calculated by a simple thinfilm calculation with effective refractive indices as well as a rigorous coupledwave analysis simulation. We experimentally show that SWS layers can work as homogeneous thin-film interference layers with effective refractive indices even if there are multiple SWS layers in a filter.

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“…Developed in the 1980s and 1990s [1,2], THz time-domain spectroscopy (THz TDS) has been established as a general spectroscopic technique to study liquids [3], solids [4], gases [5], biomolecules [6,7], aqueous salt solutions [8], nanoparticles [9], semiconductors [10] and plasmas [11]. The covered frequency bandwidth ranges from 3 cm −1 to 140 cm −1 (0.1 THz to 4 THz).…”

Section: Introductionmentioning

confidence: 99%

“…When minimizing the total variation the sample thickness can be deduced [18]. Other algorithms use multiple echoes of the THz pulse [10] or include the determination of the correct sample thickness in the time-domain [19] and in the frequency-domain [20]. For thin samples, the Fourier transformation of the extracted data into a quasi space enables the determination of the thickness with the smallest oscillations of the extracted optical parameter [21].…”

Section: Introductionmentioning

confidence: 99%

Uncertainty and Ambiguity in Terahertz Parameter Extraction and Data Analysis

Krüger

Funkner

Bründermann

et al. 2010

J Infrared Milli Terahz Waves

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Phase sensitive measurement techniques, such as THz time-domain spectroscopy or dispersive Fourier transform spectroscopy, are very useful tools to obtain a complete set of optical material parameters. When recording the electric field as a function of time delay between THz and optical pulse, the absorption coefficient and the index of refraction can be extracted. However, the analysis shows ambiguity. Here, we describe an analysis which yields a complete set of mathematical solutions and show how the physically relevant can be deduced. We present a comprehensive mathematical survey for parameter extraction. We have recorded the THz spectra of anthracene and the fatty acid capric acid as examples for weakly absorbing solid samples, and an ionic liquid as an example for a strongly absorbing liquid sample. Finally, we discuss the uncertainty of the obtained optical parameters using error propagation of the Fourier transformation with a simple model and a rigorous mathematical procedure.The final publication is available at link.springer.com:http://dx

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Terahertz time-domain spectroscopy characterization of the far-infrared absorption and index of refraction of high-resistivity, float-zone silicon

Cited by 403 publications

References 18 publications

Ultrabroadband single-cycle terahertz pulses with peak fields of 300 kV cm−1 from a metallic spintronic emitter

Ultrabroadband single-cycle terahertz pulses with peak fields of 300 kV cm−1 from a metallic spintronic emitter

Fabrication and Analysis of Three-Layer All-Silicon Interference Optical Filter with Sub-Wavelength Structure toward High Performance Terahertz Optics

Uncertainty and Ambiguity in Terahertz Parameter Extraction and Data Analysis

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