Terahertz vacuum electronic circuits fabricated by UV lithographic molding and deep reactive ion etching

Shin, Youngmin; Barnett, Larry R.; Gamzina, Diana; Luhmann, Neville C.; Field, Mark; Borwick, Robert

doi:10.1063/1.3259823

Cited by 87 publications

(28 citation statements)

References 11 publications

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“…Currently, we are investigating four types of MEMS techniques: (1) KMPR UV LIGA [5], [6], (2) SU8 UV LIGA, (3) high precision CNC nano-machining, and (4) silicon-molded electro-deposition. UV LIGA can easily form plastic molds by UV lithography and chemical development.…”

Section: Resultsmentioning

confidence: 99%

MEMS fabrications of broadband epsilon negative (ENG) metamaterial electronic circuit for 0.22 THz sheet beam TWT application

Shin

Baig

Spear

et al. 2010

35th International Conference on Infrared, Millimeter, and Terahertz Waves

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In the course of the DARPA HiFIVE (High Frequency Integrated Vacuum Electronics) program, we have investigated various MEMS techniques for micro-fabrication of electronic circuits built in a 0.22 THz traveling wave tube (TWT) amplifier. The so-called "Barnett-Shin" circuit [1] is a TE-mode waveguide structure of ultra wideband epsilon negative (ENG) metamaterial, comprised of a half-period staggered double grating array. Our prior modeling analyses of the device with a 20 keV and 250 mA sheet beam demonstrated t 12 dB/cm growth rate and the saturated conversion efficiency of 3 -5.5% (150 -275 W) over 25 % (~ 60 GHz) dynamic bandwidth. Four different MEMS techniques are being developed for circuit fabrication: UV LIGA with (1 ) KMPR and (2) SU8, (3) high precision CNC nano-machining, and (4) silicon-molded electro-deposition. In the early stages of the program, we performed proof-of-concept experiments at Ka-band, which demonstrated 25 % band response of the ENG metamaterial circuit, and numericallyanalyzed the potential deleterious effects of deviation of critical dimensions due to fabrication errors on signal response of the fabricated circuits. Currently, the MEMS fabricated 0.22 THz circuits are being investigated by 3D optical microscope and scanning electron microscope (SEM). Also, a scalar network S-parameter analyzing system has been prepared for characterization of the micro-fabricated circuits.

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Section: Resultsmentioning

confidence: 99%

MEMS fabrications of broadband epsilon negative (ENG) metamaterial electronic circuit for 0.22 THz sheet beam TWT application

Shin

Baig

Spear

et al. 2010

35th International Conference on Infrared, Millimeter, and Terahertz Waves

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“…UCD has worked on the design, fa testing of a 0.22 THz Sheet Beam TWTA DARPA's HiFIVE program. Our efforts in fabrication have primarily focused on the fo LIGA technique for high aspect ratio stru process employing KMPR [21,25] and S DRIE process [27]; and (C) Nano-machin milling [28]. Figure 1(a) shows the conceptu double vane half-period staggered she (SBTWTA) circuit.…”

Section: Development Of 022 Thz Wideba Wave Tube Amplifier At Umentioning

confidence: 99%

MM-wave to THz vacuum electron beam devices

Baig

Gamzina

Zhao

et al. 2012

2012 Asia Pacific Microwave Conference Proceedings

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MM-wave to THz vacuum electron beam device (VED) technology has substantial potential to bridge the socalled "THz gap" for high impact applications including nonintrusive detection of contraband items/explosives, > 10 Gbit/s wireless advanced communication systems, medical imaging/ diagnostics, and all weather visibility for civil aviation safety to name a few. Recent progress on the development of MM-waveTHz coherent source technology with adequate power, bandwidth, and efficiency in a compact mobile package is briefly reviewed. Two enabling technologies: high current emission density scandate cathodes and novel micro/nano-fabrication schemes are also highlighted. In this context, the UCD efforts on the development of a 0.22 THz Sheet Beam Traveling Wave Tube Amplifier (SBTWTA) are also summarized.

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“…17 Figure 1(a) shows the TWT model with input/output couplers excluding sever ports and the inset depicts the single cell TWTA model for dispersion analysis. The slow wave circuit is a double vane half-period staggered TE-mode grating circuit with symmetric axial electric fields in the adjacent top and bottom vanes for the enhanced beam-wave interaction.…”

Section: 22 Thz Sheet Beam Twta Circuitmentioning

confidence: 99%

0.22 THz wideband sheet electron beam traveling wave tube amplifier: Cold test measurements and beam wave interaction analysis

et al. 2012

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Measurements of parallel electron velocity distributions using whistler wave absorption Rev. Sci. Instrum. 83, 083503 (2012) HELIOS: A helium line-ratio spectral-monitoring diagnostic used to generate high resolution profiles near the ion cyclotron resonant heating antenna on TEXTOR Rev. Sci. Instrum. 83, 10D722 (2012) Microwave Doppler reflectometer system in LHD Rev. Sci. Instrum. 83, 10E322 (2012) Design of a millimeter-wave polarimeter for NSTX-Upgrade and initial test on DIII-D Rev. Sci. Instrum. 83, 10E321 (2012) Design of the reflective optics for Tore Supra ECEI system Rev. Sci. Instrum. 83, 10E318 (2012) Additional information on Phys. PlasmasIn this paper, we describe micro-fabrication, RF measurements, and particle-in-cell (PIC) simulation modeling analysis of the 0.22 THz double-vane half period staggered traveling wave tube amplifier (TWTA) circuit. The TWTA slow wave structure comprised of two sections separated by two sever ports loaded by loss material, with integrated broadband input/output couplers. The micro-metallic structures were fabricated using nano-CNC milling and diffusion bonded in a three layer process. The 3D optical microscopy and SEM analysis showed that the fabrication error was within 2-3 lm and surface roughness was measured within 30-50 nm. The RF measurements were conducted with an Agilent PNA-X network analyzer employing WR5.1 T/R modules with a frequency range of 178-228 GHz. The in-band insertion loss (S 21 ) for both the short section and long section (separated by a sever) was measured as $À5 dB while the return loss was generally around $À15 dB or better. The measurements matched well with the S-matrix simulation analysis that predicted a 3 dB bandwidth of $45 GHz with an operating frequency at 220 GHz. However, the measured S 21 was $3 dB less than the design values, and is attributed to surface roughness and alignment issues. The confirmation measurements were conducted over the full frequency band up to 270 GHz employing a backward wave oscillator (BWO) scalar network analyzer setup employing a BWO in the frequency range 190 GHz-270 GHz. PIC simulations were conducted for the realistic TWT output power performance analysis with incorporation of corner radius of 127 lm, which is inevitably induced by nano-machining. Furthermore, the S 21 value in both sections of the TWT structure was reduced to correspond to the measurements by using a degraded conductivity of 10% International Annealed Copper Standard. At 220 GHz, for an elliptic sheet electron beam of 20 kV and 0.25 A, the average output power of the tube was predicted to be reduced from 90 W (for ideal conductivity/design Sparameters) to 70 W (for the measured S-parameters/inferred conductivity) for an average input power of 50 mW. The gain of the tube remains reasonable: $31.4 dB with an electronic efficiency of $1.4%. The same analysis was also conducted for several frequencies between 190 GHz-260 GHz. This detailed realistic PIC analysis demonstrated that this nano-machined TWT circuit has slightly reduced...

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Terahertz vacuum electronic circuits fabricated by UV lithographic molding and deep reactive ion etching

Cited by 87 publications

References 11 publications

MEMS fabrications of broadband epsilon negative (ENG) metamaterial electronic circuit for 0.22 THz sheet beam TWT application

MEMS fabrications of broadband epsilon negative (ENG) metamaterial electronic circuit for 0.22 THz sheet beam TWT application

MM-wave to THz vacuum electron beam devices

0.22 THz wideband sheet electron beam traveling wave tube amplifier: Cold test measurements and beam wave interaction analysis

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