Testing epitaxial Co1.5Fe1.5Ge(001) electrodes in MgO-based magnetic tunnel junctions

Neggache, Amina; Hauet, Thomas; Bertran, F.; Fèvre, P. Le; Petit-Watelot, Sébastien; Devolder, T.; Ohresser, P.; Boulet, Pascal; Mewes, Claudia; Maat, S.; Childress, J. R.; Andrieu, S.

doi:10.1063/1.4885354

Cited by 11 publications

(10 citation statements)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The highest value of saturation magnetization M S = 920 emu/cm 3 was observed for the film deposited at T S = 573 K. This is in good agreement with the results previously reported for Co 2 FeGe films in [ 39 ] while is slightly lower comparing to those from [ 6 , 22 ]. However, in the latter case the films were Co 2 Fe enriched.…”

Section: Resultssupporting

confidence: 91%

“…Both elevated T S and annealing lead to the rise of

. However, the highest achieved values

are still lower than for epitaxial Co 1.5 Fe 1.5 Ge films (

) [ 22 ]. It is well known [ 46 ] that the decrease of the exchange constant is associated with dilution magnetic atoms by non-magnetic.…”

Section: Resultsmentioning

confidence: 99%

“…Thus, FHA films are considered as attractive candidates for different multifunctional applications. It was shown in [ 5 , 17 , 19 , 22 , 23 ] that substrate temperature (T S ) and post-deposition annealing (T a ) are powerful tools to control the properties of FHA films. However, so far there is no universal law for thermal treatment conditions.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Control of Structural and Magnetic Properties of Polycrystalline Co2FeGe Films via Deposition and Annealing Temperatures

et al. 2021

View full text Add to dashboard Cite

Thin polycrystalline Co2FeGe films with composition close to stoichiometry have been fabricated using magnetron co-sputtering technique. Effects of substrate temperature (TS) and post-deposition annealing (Ta) on structure, static and dynamic magnetic properties were systematically studied. It is shown that elevated TS (Ta) promote formation of ordered L21 crystal structure. Variation of TS (Ta) allow modification of magnetic properties in a broad range. Saturation magnetization ~920 emu/cm3 and low magnetization damping parameter α ~ 0.004 were achieved for TS = 573 K. This in combination with soft ferromagnetic properties (coercivity below 6 Oe) makes the films attractive candidates for spin-transfer torque and magnonic devices.

show abstract

Section: Resultssupporting

confidence: 91%

“…Both elevated T S and annealing lead to the rise of

. However, the highest achieved values

are still lower than for epitaxial Co 1.5 Fe 1.5 Ge films (

) [ 22 ]. It is well known [ 46 ] that the decrease of the exchange constant is associated with dilution magnetic atoms by non-magnetic.…”

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Control of Structural and Magnetic Properties of Polycrystalline Co2FeGe Films via Deposition and Annealing Temperatures

et al. 2021

View full text Add to dashboard Cite

show abstract

“…In addition, the density functional theory (DFT) calculation results indicate the preservation of inherent electronic properties such as the linear Dirac band structure of graphene and half-metallicity of CFGG in the vicinity of the interface. [45] This shows that the chemical ordering of CFGG relevant to its half-metallicity is well preserved in the vicinity of the SLG/CFGG interface. Figure S1, Supporting Information).…”

mentioning

confidence: 79%

Graphene/Half‐Metallic Heusler Alloy: A Novel Heterostructure toward High‐Performance Graphene Spintronic Devices

Larionov

Попов

et al. 2019

Advanced Materials

View full text Add to dashboard Cite

For years graphene has been considered as the most potential material which paves the way to advanced spintronic devices [1][2][3][4][5][6] due to its extraordinary electrical and physical properties. [7][8][9][10] The long spin diffusion length in graphene originated from the weak spin-orbit interaction and high electron mobility have stimulated numerous studies on developing graphene-based lateral spin valve (SV) in the past decade. [11][12][13][14][15][16] Apart from the application to lateral SV dealing with in-plane spin transport in a graphene channel, another potential application that is the implementation of graphene as a spacer material in vertical SV has recently become a subject of intense interest. [17][18][19][20][21][22] In development of vertical SV, the achievement of both the low resistance-area (RA) product and large magnetoresistance (MR) ratio is required for the realization of read heads for ultrahigh-density hard disk drives, [23] and magnetic random access memory [5,6] with high-speed operation and low power consumption. However, the current technology Graphene-based vertical spin valves (SVs) are expected to offer a large magnetoresistance effect without impairing the electrical conductivity, which can pave the way for the next generation of high-speed and low-power-consumption storage and memory technologies. However, the graphene-based vertical SV has failed to prove its competence due to the lack of a graphene/ferromagnet heterostructure, which can provide highly efficient spin transport. Herein, the synthesis and spin-dependent electronic properties of a novel heterostructure consisting of single-layer graphene (SLG) and a half-metallic Co 2 Fe(Ge 0.5 Ga 0.5 ) (CFGG) Heusler alloy ferromagnet are reported. The growth of high-quality SLG with complete coverage by ultrahigh-vacuum chemical vapor deposition on a magnetron-sputtered single-crystalline CFGG thin film is demonstrated. The quasi-free-standing nature of SLG and robust magnetism of CFGG at the SLG/ CFGG interface are revealed through depth-resolved X-ray magnetic circular dichroism spectroscopy. Density functional theory (DFT) calculation results indicate that the inherent electronic properties of SLG and CFGG such as the linear Dirac band and half-metallic band structure are preserved in the vicinity of the interface. These exciting findings suggest that the SLG/CFGG heterostructure possesses distinctive advantages over other reported graphene/ferromagnet heterostructures, for realizing effective transport of highly spin-polarized electrons in graphene-based vertical SV and other advanced spintronic devices.

show abstract

“…It showedthe expected lattice for the CMS surface structure. The chemical order was evidenced by new ½ streaks,observed along the (110) azimuth (see the supplementary informationand [Neg14]). Standard X-Ray diffraction analysis confirms the cubic structure typical of Heusler alloys.…”

mentioning

confidence: 99%

Direct evidence for minority spin gap in theCo2MnSiHeusler compound

et al. 2016

View full text Add to dashboard Cite

Half Metal Magnets are of great interest in the field of spintronics because of their potential full spin-polarization at the Fermi level and low magnetization damping. The high Curie temperature and predicted 0.7eV minority spin gap make the Heusler alloy Co 2 MnSi very promising for applications.We investigated the half-metallic magnetic character of this alloy using spin-resolved photoemission, ab initio calculation and ferromagnetic resonance. At the surface of Co 2 MnSi, a gap in the minority spin channel is observed, leading to 100%spin polarization. However, this gap is 0.3 eV below the Fermi level and a minority spin state is observed at the Fermi level. We showthat a minority spin gap at the Fermi energy can neverthelessbe recovered either by changing the stoichiometry of the alloy or by covering the surface byMn, MnSi or MgO. This results in extremely small damping coefficients reachingvalues as low as7x 10 -4 .

show abstract

Testing epitaxial Co1.5Fe1.5Ge(001) electrodes in MgO-based magnetic tunnel junctions

Cited by 11 publications

References 16 publications

Control of Structural and Magnetic Properties of Polycrystalline Co2FeGe Films via Deposition and Annealing Temperatures

Control of Structural and Magnetic Properties of Polycrystalline Co2FeGe Films via Deposition and Annealing Temperatures

Graphene/Half‐Metallic Heusler Alloy: A Novel Heterostructure toward High‐Performance Graphene Spintronic Devices

Direct evidence for minority spin gap in theCo2MnSiHeusler compound

Contact Info

Product

Resources

About