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Amorphous carbon films with high sp 3 content were deposited by magnetron sputtering and intense argon ion plating. Above a compressive stress of 13 GPa a strong increase of the density of the carbon films is observed. We explain the increase of density by a stress-induced phase transition of sp 2 configured carbon to sp 3 configured carbon. Preferential sputtering of the sp 2 component in the carbon films plays a minor role compared to the sp 2 ⇒sp 3 transition at high compressive stress formed during the deposition process. Transmission electron microscopy shows evidence of graphitic regions in the magnetron sputtered/Ar plated amorphous carbon thin films. Differences in the microstructure of the tetrahedral amorphous carbon ͑ta-C͒ films deposited by filtered arc and mass selected ion beam; and those films deposited using magnetron sputtering combined with intense ion plating can be used to explain the different electronic and optical properties of both kinds of ta-C films. © 1997 American Institute of Physics. ͓S0021-8979͑97͒09422-X͔ INTRODUCTIONCarbon films have been of considerable research interest since Aisenberg and Chabot 1 deposited the first hard, diamondlike amorphous carbon films. Amorphous carbon films with a high fraction of sp 3 hybridized carbons have been deposited by filtered cathodic vacuum arc ͑FCVA͒ 2-4 and mass selected ion beams. 5-8 C ϩ ions are used to deposit the amorphous carbon films by both techniques. Different mechanisms for the formation of the sp 3 rich phase have been proposed such as the shallow implantation process ͑subplantation͒ by Lifshitz et al.,5,6 selective sputtering processes by Reinke and Kuhr 9 ͑discussed for c-BN͒, and stressinduced phase transition processes by McKenzie et al. 3,10 Analytical expressions for the subplantation process describing the formation of stress and the densification have been proposed by Davis 11 and Robertson. 12 The basic idea of the models by Davis and Robertson is that a carbon ion needs at least the displacement energy to penetrate into the carbon film leading to a densification of subsurface layers of the evolving film. 6 But, not all the energy of the energetic carbon ion is used for penetration ͑displacement processes͒. Part of the ion energy is used by momentum transfer collisions which results in a thermal spike. Davis 11 and Robertson 12 modified calculations of Windischmann 13 by allowing implanted carbon atoms to relax to the film surface, due to the high localized temperature generated by the impinging C ϩ ions in the thermal spike. Yet, questions as to the validity of a thermal spike at ion energies of a few hundred electron volts in a low elemental mass material remains unanswered. Nevertheless, at such impact energies several thousand vibrations are involved for a time period of the order of 10 Ϫ12 s. 14 Dense and highly tetrahedral amorphous carbon films have also been deposited by the laser ablation technique, 15,16 by dual ion beam technique, 17 and recently by magnetron sputtering together with intense ion plating ͑MS/I...
Amorphous carbon films with high sp 3 content were deposited by magnetron sputtering and intense argon ion plating. Above a compressive stress of 13 GPa a strong increase of the density of the carbon films is observed. We explain the increase of density by a stress-induced phase transition of sp 2 configured carbon to sp 3 configured carbon. Preferential sputtering of the sp 2 component in the carbon films plays a minor role compared to the sp 2 ⇒sp 3 transition at high compressive stress formed during the deposition process. Transmission electron microscopy shows evidence of graphitic regions in the magnetron sputtered/Ar plated amorphous carbon thin films. Differences in the microstructure of the tetrahedral amorphous carbon ͑ta-C͒ films deposited by filtered arc and mass selected ion beam; and those films deposited using magnetron sputtering combined with intense ion plating can be used to explain the different electronic and optical properties of both kinds of ta-C films. © 1997 American Institute of Physics. ͓S0021-8979͑97͒09422-X͔ INTRODUCTIONCarbon films have been of considerable research interest since Aisenberg and Chabot 1 deposited the first hard, diamondlike amorphous carbon films. Amorphous carbon films with a high fraction of sp 3 hybridized carbons have been deposited by filtered cathodic vacuum arc ͑FCVA͒ 2-4 and mass selected ion beams. 5-8 C ϩ ions are used to deposit the amorphous carbon films by both techniques. Different mechanisms for the formation of the sp 3 rich phase have been proposed such as the shallow implantation process ͑subplantation͒ by Lifshitz et al.,5,6 selective sputtering processes by Reinke and Kuhr 9 ͑discussed for c-BN͒, and stressinduced phase transition processes by McKenzie et al. 3,10 Analytical expressions for the subplantation process describing the formation of stress and the densification have been proposed by Davis 11 and Robertson. 12 The basic idea of the models by Davis and Robertson is that a carbon ion needs at least the displacement energy to penetrate into the carbon film leading to a densification of subsurface layers of the evolving film. 6 But, not all the energy of the energetic carbon ion is used for penetration ͑displacement processes͒. Part of the ion energy is used by momentum transfer collisions which results in a thermal spike. Davis 11 and Robertson 12 modified calculations of Windischmann 13 by allowing implanted carbon atoms to relax to the film surface, due to the high localized temperature generated by the impinging C ϩ ions in the thermal spike. Yet, questions as to the validity of a thermal spike at ion energies of a few hundred electron volts in a low elemental mass material remains unanswered. Nevertheless, at such impact energies several thousand vibrations are involved for a time period of the order of 10 Ϫ12 s. 14 Dense and highly tetrahedral amorphous carbon films have also been deposited by the laser ablation technique, 15,16 by dual ion beam technique, 17 and recently by magnetron sputtering together with intense ion plating ͑MS/I...
transportation, limiting the rate capability and power density of LIBs and SIBs. In addition, due to the larger size of Na + than Li + , the challenges of SIBs are more signifi cant, including poor cycling stability, low columbic effi ciency, and insuffi cient power capability. On these regards, surface engineering is an essential research issue. From 1990s, considerable efforts have been devoted to the nanosynthesis of electrode materials, boosting the fast development of new electrode materials for high-performance electrochemical energy storage (EES) devices. [4][5][6] An electrode with surface engineered nanostructure can render benefi ts to its electrochemical properties, including (i) abundant active sites and electrode/electrolyte contact area, (ii) enhanced electrical conductivity and charge collection effi ciency, (iii) shortened ion diffusion paths and higher ionic conductivity, (iv) better mechanical alleviation for insertion/de-insertion strain. [ 7 ] However, nanoscaling is a "double-edged sword"; It cannot fulfi ll all the rigorous requirements of LIBs and SIBs. Parasitic reactions may occur on the exposed surfaces of electrode materials, such as the solubility of intermediated products, the formation of unstable solid electrolyte interface (SEI) fi lms, and the decomposition of electrolyte. These will lead to deformation of electrode structure and subsequently the capacity decay upon long cycles. To tackle these issues, a rational design of nanostructures and surface engineering are in the ascendant. [ 8,9 ] In view of the growing number of surface engineering strategies that have employed successfully for electrodes of various types of energy storage devices (e.g., batteries, photoelectrochemical cells, and supercapacitors), in this report, we will highlight the recent progress specifi cally in LIBs and SIBs. We start with a general summary of nanostructured electrode confi gurations and surface coating methods, and then elaborate the basic effects of nanoscale size, pore, and morphology. Our main discussion will be put on the effects of surface engineering on suppressing secondary reaction and SEI fi lm, buffering for volume expansion, electrical and ionic conductivity enhancement for LIBs and SIBs. At the end, we will provide an overall conclusion and our own perspective. A General Summary of Surface Engineering StrategiesGenerally, the concept of surface engineering can be classifi ed into two main categories (see Figure 1 ): (i) intrinsic nanostructures with high surface areas and (ii) hybridization with Surface engineering of electrode materials to yield favorable electrochemical performance is a hot spot of current research in the energy storage area. Here, this Report highlights recent progress in rational surface engineering strategies in association with their effects on the electrochemical properties. The electrochemical performance enhancement due to both intrinsic nanostructuring and hybridization with surface functional species is elaborated. The focus here is lithium and sodium ion b...
In this study, we have attempted to synthesize the Gallium (Ga)-implanted diamond-like carbon (DLC) film for new functional devices as substituting Si-based materials. Intrinsic-DLC (i-DLC) films (energy gap: 1.45 eV) were deposited by the ionization vapor method with applying the negative pulsed bias voltage (frequency: 2 kHz, duty ratio: 30%, peak voltage: 500 V) to SiO2 substrates. Ga atoms were implanted to i-DLC films as accepters utilizing by focused ion beam irradiation system. The Raman scattering spectra of i-DLC and Ga-DLC films showed typical DLC characteristics which consisted of I(D) and I(G) peaks. In order to evaluate working function of the Ga-DLC film, several electrode materials (Au, Pt, Cu, Al, and Sn) were deposited on the films. Current-voltage characteristics of Au and Pt electrodes on Ga-DLC films showed Ohmic contacts, and Cu, Al, and Sn electrodes were Schottky contacts. These results suggested that a work function of the Ga-DLC film was in the range of 4.47 eV to 4.58 eV. To apply these contact properties to DLC semiconductive devices, we produced the DLC Schottky diode using Al and Pt electrodes deposited on the Ga-DLC film. A currentvoltage characteristic of DLC Schottky diode showed diode property in which amount of forward and backward voltage were 7.0 V and 17.0 V, respectively. The ideality factor n of produced diode was 11.3. C⃝ 2018 Wiley Periodicals, Inc. Electron Comm Jpn, 101(4): 34-41, 2018; Published online in Wiley Online Library (wileyonlinelibrary.com).
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